Patents by Inventor Sun Jo KIM

Sun Jo KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Display device and manufacturing method thereof
    Patent number: 9287436
    Abstract: A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: March 15, 2016
    Assignees: SAMSUNG DISPLAY CO., LTD., INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, ULSAN COLLEGE INDUSTRY COOPERATION
    Inventors: Sang Youn Han, Cheol Kyu Kim, Jun Ho Song, Sung Hoon Yang, Kyung Tea Park, Seung Mi Seo, Suk Won Jung, Do Young Kim, Sun Jo Kim, Hyung Jun Kim
  • DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20140021518
    Abstract: A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.
    Type: Application
    Filed: December 18, 2012
    Publication date: January 23, 2014
    Applicants: SAMSUNG DISPLAY CO., LTD., ULSAN COLLEGE INDUSTRY COOPERATION, INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Sang Youn HAN, Cheol Kyu KIM, Jun Ho SONG, Sung Hoon YANG, Kyung Tea PARK, Seung Mi SEO, Suk Won JUNG, Do Young KIM, Sun Jo KIM, Hyung Jun KIM