Abstract: A display device includes: a blue color filter layer in a blue transmission region of an upper substrate, and including first scattering particles; a green color filter layer in a green transmission region of the upper substrate, and including second scattering particles; a red color filter layer in a red transmission region of the upper substrate; a partition wall on the upper substrate and defining a blue transmission opening, a green transmission opening, and a red transmission opening, which overlap the blue transmission region, the green transmission region, and the red transmission region, respectively; a color conversion layer including red color conversion particles and third scattering particles, and accommodated in the red transmission opening; a light emitting element layer on a lower substrate facing the upper substrate; and a filling material between the upper substrate and the lower substrate.

Abstract: A system for analyzing an emotion of a sound includes: an input unit to which target sound data is input; a basic element extraction unit extracting a basic element from the target sound data to generate target basic element information; a chord progression extraction unit extracting a chord progression from the target sound data to generate target chord progression information; and an emotion determining unit calculating a target emotion value by applying the target basic element information and the target chord progression information to an emotion extraction model generated by using sample sound data.

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

Abstract: According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.

Abstract: Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode.

Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.

Abstract: According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode.

Abstract: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.

Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

Abstract: Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode.

Abstract: According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer.

Abstract: A method for drying substrates using isopropyl alcohol (IPA) includes: a pre-stage in which heated fluid is injected to a bottom surface of a substrate to raise a temperature of the substrate simultaneously to injection of an organic solvent to a top surface of the substrate and injection of a dry gas to the top surface thereof to improve a vaporization power of the organic solvent; and a final stage in which the injection of the heated fluid is stopped and the organic solvent and the dry gas are injected to the top surface of the substrate.

Abstract: According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.

Abstract: A method for drying substrates using isopropyl alcohol (IPA) includes: a pre-stage in which heated fluid is injected to a bottom surface of a substrate to raise a temperature of the substrate simultaneously to injection of an organic solvent to a top surface of the substrate and injection of a dry gas to the top surface thereof to improve a vaporization power of the organic solvent; and a final stage in which the injection of the heated fluid is stopped and the organic solvent and the dry gas are injected to the top surface of the substrate.

Abstract: According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode.

Abstract: According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL.

Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.

Abstract: According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer.

Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.