Abstract: The present disclosure describes a slurry composition to reduce roughness a surface, such as a polycrystalline material including silicon carbide, alumina, diamond, and carbon. The present disclosure can also be applied to single crystal materials (e.g., silicon carbide, sapphire, or diamond).

Abstract: A slurry for chemical mechanical polishing (CMP) includes an aqueous liquid carrier, an oxygen and anion containing transition metal compound or polyatomic cations including a transition metal and oxygen or hydrogen, and a per-based oxidizer. The anion for the oxygen and anion containing transition metal compound can include oxynitrate, oxychloride, oxyhydroxide, oxyacetate, oxysulfide, or oxysulfate. The per-based oxidizer can be a permanganate compound.

Abstract: The invention provides methodology for final finishing of hard surfaces such as diamond surfaces. In this method, a smooth pad having a surface roughness of about 0.2 nm to about 100 nm, having, for example a thickness ranging from about 0.02 mm to about 5 mm, and a Shore D hardness of 30 or higher, is utilized in conjunction with known polishing slurries to provide diamond surfaces having superior smooth finishes.

Abstract: The invention provides compositions useful in the polishing of transition metal-containing surfaces typically found on microelectronic devices. In one aspect, the invention provides a composition comprising: a liquid carrier; titania abrasive particles, wherein the particles are at least partially coated with alumina or amorphous silica to provide coated titania abrasive particles; wherein the coated titania abrasive particles have an average diameter of about 50 nm to about 250 nm; and a corrosion inhibitor. The invention, the compositions are advantageously utilized to polish microelectronic device substrates having transition metal-containing surfaces thereon. In certain embodiments, the surfaces are chosen from molybdenum and ruthenium-containing films and show markedly improved selectivity relative to thermal oxide.

Abstract: The invention provides improved slurries for the polishing of hard materials such as those having a Mohs hardness of greater than about 6. Exemplary hard surfaces include sapphire, silicon carbide, silicon nitride, and gallium nitride, and diamond. In the compositions and method of the invention, novel compositions comprising a unique combination of additives which surprisingly were found to uniformly disperse diamond particles having a wide range of particle size in a slurry. In the method of the invention, the generally alkaline slurry compositions of the invention are capable of utilizing diamond particle sizes of greater than 40 microns while effecting good removal rates. In such cases, when utilized with a suitable pad, rapid and planar grinding of silicon carbide, silicon nitride, sapphire, gallium nitride, and diamond is possible, with uniform surface damage.

Abstract: Provided are improved slurry compositions useful in the CMP polishing of glass and other dielectric materials. In one aspect, the compositions of the invention are comprised of water; silica abrasive; a cationic surfactant; and ceria abrasive. The compositions effect a high removal rate while limiting the number of scratches typically observed when utilizing ceria alone.

Abstract: A slurry for chemical mechanical polishing (CMP) includes an aqueous liquid carrier, an oxygen and anion containing transition metal compound or polyatomic cations including a transition metal and oxygen or hydrogen, and a per-based oxidizer. The anion for the oxygen and anion containing transition metal compound can include oxynitrate, oxychloride, oxyhydroxide, oxyacetate, oxysulfide, or oxysulfate. The per-based oxidizer can be a permanganate compound.