Patents by Inventor Sunny Yan Hwee Lua

Sunny Yan Hwee Lua has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory cell, memory array, method of forming and operating memory cell
    Patent number: 10923648
    Abstract: Various embodiments may relate to a memory cell. The memory cell may include a first cell electrode, a first insulator layer and a first magnetic free layer between the first cell electrode and the first insulator layer. The memory cell may also include a second cell electrode, a second insulator layer, and a second magnetic free layer between the second cell electrode and the second insulator layer. A magnetic pinned layer may be between the first insulator layer and the second insulator layer. A direction of magnetization of the first magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the first cell electrode. A direction of magnetization of the second magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the second cell electrode.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: February 16, 2021
    Assignee: Agency for Science, Technology and Research
    Inventors: Karim Ali Abdeltawwab Ahmed, Sunny Yan Hwee Lua, Fei Li
  • MEMORY CELL, MEMORY ARRAY, METHOD OF FORMING AND OPERATING MEMORY CELL
    Publication number: 20190334080
    Abstract: Various embodiments may relate to a memory cell. The memory cell may include a first cell electrode, a first insulator layer and a first magnetic free layer between the first cell electrode and the first insulator layer. The memory cell may also include a second cell electrode, a second insulator layer, and a second magnetic free layer between the second cell electrode and the second insulator layer. A magnetic pinned layer may be between the first insulator layer and the second insulator layer. A direction of magnetization of the first magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the first cell electrode. A direction of magnetization of the second magnetic free layer may be changeable in response to a current flowing between a first end and a second end of the second cell electrode.
    Type: Application
    Filed: January 17, 2018
    Publication date: October 31, 2019
    Inventors: Karim Ali Abdeltawwab Ahmed, Sunny Yan Hwee Lua, Fei Li
  • Circuit arrangement, method of forming and operating the same
    Patent number: 10453511
    Abstract: Various embodiments may provide a circuit arrangement. The circuit arrangement may include a first spin-orbit torque magnetic tunnel junction cell, a second spin-orbit torque magnetic tunnel junction cell, a first driver circuit arrangement, a second driver circuit arrangement, and a read circuit arrangement. The circuit arrangement allows for the operation of a non-volatile flip-flop based on spin-orbit torque effect.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: October 22, 2019
    Assignee: Agency for Science, Technology and Research
    Inventors: Sunny Yan Hwee Lua, Aarthy Mani
  • CIRCUIT ARRANGEMENT, METHOD OF FORMING AND OPERATING THE SAME
    Publication number: 20190057731
    Abstract: Various embodiments may provide a circuit arrangement. The circuit arrangement may include a first spin-orbit torque magnetic tunnel junction cell, a second spin-orbit torque magnetic tunnel junction cell, a first driver circuit arrangement, a second driver circuit arrangement, and a read circuit arrangement. The circuit arrangement allows for the operation of a non-volatile flip-flop based on spin-orbit torque effect.
    Type: Application
    Filed: February 16, 2017
    Publication date: February 21, 2019
    Inventors: Sunny Yan Hwee Lua, Aarthy Mani