Abstract: A silicon thin film solar cell is discussed. The silicon thin film solar cell includes a substrate on which light is incident, a first electrode positioned on the substrate at a surface opposite a surface of the substrate on which the solar light is incident, a second electrode positioned on the first electrode, at least one photoelectric conversion unit positioned between the first electrode and the second electrode, and a back reflection layer positioned between the at least one photoelectric conversion unit and the second electrode. The back reflection layer includes a first reflection layer formed of a material having an absorption coefficient equal to or less than 400 cm?1 with respect to light having a wavelength equal to or greater than 700 nm.

Abstract: A thin film solar cell module includes a substrate, at least one first cell positioned in a central area of the substrate, and at least one second cell positioned in an edge area of the substrate. Each of the first and second cells includes a first electrode, a second electrode, and at least one photoelectric conversion unit positioned between the first electrode and the second electrode. An amount of germanium contained in the photoelectric conversion unit of the first cell is less than an amount of germanium contained in the photoelectric conversion unit of the second cell positioned on the same level layer as the photoelectric conversion unit of the first cell.

Abstract: A thin film solar cell module includes a substrate, at least one first cell positioned in a central area of the substrate, and at least one second cell positioned in an edge area of the substrate. Each of the first and second cells includes a first electrode, a second electrode, and at least one photoelectric conversion unit positioned between the first electrode and the second electrode. An amount of germanium contained in the photoelectric conversion unit of the first cell is less than an amount of germanium contained in the photoelectric conversion unit of the second cell positioned on the same level layer as the photoelectric conversion unit of the first cell.

Abstract: A solar cell is disclosed. The solar cell includes a substrate, a first electrode on the substrate, a second electrode, and a photoelectric transformation unit between the first electrode and the second electrode. The photoelectric transformation unit includes a first intrinsic (referred to as an i-type) semiconductor layer formed of amorphous silicon doped with at least one of carbon (C) and oxygen (O) as impurities and a second i-type semiconductor layer formed of germanium (Ge)-doped microcrystalline silicon.

Abstract: A thin film solar cell module includes a substrate; a plurality of first cells positioned in a central region, where one or more first cell include at least one photovoltaic unit; and a plurality of second cells positioned in edge regions of the substrate, where one or more second cell include at least one photovoltaic unit. Among the photovoltaic units positioned in the same layer the photovoltaic unit of the one or more second cells have higher band gap energy than that the photovoltaic unit of the one or more first cells.

Abstract: A thin film solar cell is discussed. The thin film solar cell includes a substrate, a first photoelectric conversion unit positioned on the substrate, and a back reflection layer for reflecting back light transmitted by the first photoelectric conversion unit to the first photoelectric conversion unit. The first photoelectric conversion unit includes a first intrinsic layer for light absorption. The back reflection layer includes a first back reflection layer doped with n-type or p-type impurities, and the first back reflection layer directly contacts the first intrinsic layer of the first photoelectric conversion unit.

Abstract: A silicon thin film solar cell is discussed. The silicon thin film solar cell includes a substrate on which light is incident, a first electrode positioned on the substrate at a surface opposite a surface of the substrate on which the solar light is incident, a second electrode positioned on the first electrode, at least one photoelectric conversion unit positioned between the first electrode and the second electrode, and a back reflection layer positioned between the at least one photoelectric conversion unit and the second electrode. The back reflection layer includes a first reflection layer formed of a material having an absorption coefficient equal to or less than 400 cm?1 with respect to light having a wavelength equal to or greater than 700 nm.

Abstract: A solar cell is disclosed. The solar cell includes a substrate, a first electrode on the substrate, a second electrode, and a photoelectric transformation unit between the first electrode and the second electrode. The photoelectric transformation unit includes a first intrinsic (referred to as an i-type) semiconductor layer formed of amorphous silicon doped with at least one of carbon (C) and oxygen (O) as impurities and a second i-type semiconductor layer formed of germanium (Ge)-doped microcrystalline silicon.