Abstract: The present invention relates to a conical contact type ophthalmic digital microscope, and more particularly, to a conical contact type ophthalmic digital microscope allowing observation of a magnified eyeball while being placed above a cornea of a patient. The corneal contact type ophthalmic digital microscope according to the present invention includes a housing, an objective lens part installed below the housing and configured to come in contact with a cornea of an eyeball, an image sensor part installed in the housing and configured to capture the eyeball visible through the objective lens part and generate an eyeball image, a position adjuster configured to change a position of the image sensor part, and a control part configured to control operations of the image sensor part and the position adjuster and output the eyeball image through a display provided outside the housing.

Abstract: Provided are a plasma treatment apparatus and a method of fabricating semiconductor device using the same. The plasma treatment apparatus includes a chamber which provides a plasma treatment space, a bottom electrode disposed in the chamber and supports a wafer, a top electrode disposed in the chamber facing the bottom electrode, a source power source which supplies a source power output of a first frequency to the bottom electrode, a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode, and a pulse power source which applies a pulse voltage to the bottom electrode, wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level in a second time section and is applied to the bottom electrode.

Abstract: Provided are a plasma treatment apparatus and a method of fabricating semiconductor device using the same. The plasma treatment apparatus includes a chamber which provides a plasma treatment space, a bottom electrode disposed in the chamber and supports a wafer, a top electrode disposed in the chamber facing the bottom electrode, a source power source which supplies a source power output of a first frequency to the bottom electrode, a bias power source which supplies a bias power output of a second frequency different from the first frequency to the bottom electrode, and a pulse power source which applies a pulse voltage to the bottom electrode, wherein the bias power output is a bias voltage which is pulse-modulated to a first voltage level in a first time section and pulse-modulated to a second voltage level in a second time section and is applied to the bottom electrode.