Abstract: Disclosed is a display device including an oxide semiconductor. The display device includes a light-emitting device and a pixel driving circuit located in each pixel area. The pixel driving circuit supplies a driving current corresponding to a data signal to the light-emitting device in response to a gate signal. The pixel driving circuit includes a driving thin-film transistor and at least one switching thin-film transistor. The driving thin-film transistor includes a driving semiconductor pattern made of an oxide semiconductor. A conductive pattern including a metal is located under the driving semiconductor pattern. The conductive pattern is in contact with the driving semiconductor pattern. The conductive pattern has a larger work function than the driving semiconductor pattern. Accordingly, occurrence of mura at low grayscale is prevented without a reduction in on-current. Consequently, the display device exhibits improved image quality.

Abstract: A display device includes a substrate including a plurality of sub-pixels, a plurality of thin film transistors disposed on the substrate, a planarization layer disposed on the plurality of thin film transistors, a plurality of first electrodes disposed on the planarization layer and electrically connected to the plurality of thin film transistors, a plurality of second electrodes disposed on the planarization layer and spaced apart from the plurality of first electrodes, a bank covering a part of each of the plurality of first electrodes and the plurality of second electrodes and disposed to define an emission area, a plurality of LEDs disposed in the emission area and electrically connected to the plurality of first electrodes and the plurality of second electrodes and a plurality of first conductive patterns disposed on the bank. Therefore, self-alignment of the LEDs can be easily achieved.

Abstract: A stretchable display apparatus can include a transistor substrate having a plurality of first regions corresponding to a plurality of pixel substrates disposed on a base substrate, and a second region between the plurality of first regions; a connection line disposed in the second region, the connection line electrically connecting two adjacent pixel substrates among the plurality of pixel substrates; and a reduction pattern disposed in the second region. Also, the reduction pattern can include a first reduction pattern overlapping with the connection line; and a second reduction pattern spaced apart from the first reduction pattern by a first distance and having a shape corresponding to at least a portion of the connection line.

Abstract: A thin film transistor and a display panel having the same are provided. A display panel includes a substrate, an active layer disposed over the substrate and including a source region, a drain region, and a middle region between the source region and the drain region, and a gate electrode over the active layer and disposed overlapping with the middle region, and the active layer includes a plurality of holes disposed symmetrically with respect to the middle region. The display panel can improve its reliability owing to heat dissipation paths through the plurality of holes.

Abstract: The present disclosure relates to an organic light emitting display device and a method of fabricating the same. The organic light emitting display device comprises a first substrate including a plurality of sub-pixels; a thin film transistor in each of the plurality of sub-pixels and on the first substrate; an organic light emitting diode in each of the plurality of sub-pixels and on the first substrate; and an aging voltage supply line extending from a lower surface of the first substrate to a portion of the thin film transistor and supplying an aging voltage to the thin film transistor.

Abstract: The present disclosure discloses an array substrate and a display device including thereof. The array substrate includes a substrate, a shield metal over the substrate and a thin film transistor including an active layer with a channel region over the shield metal and a thermal gradient portion in at least one of the shield metal, the active layer and the array substrate so as to lower a temperature of a first area of the channel region than a temperature of a second area of the channel region. A cooling zone between the channel region and the shield metal is defined by the thermal gradient portion. The array substrate and a display device including the array substrate including the thermal gradient portion that defines the cooling zone between the thin film transistor and the shield metal can improves Kink effect, maintain high driving voltage, increase on current and/or improve switching properties.

Abstract: An organic light emitting display device comprises a substrate including a display area and a non-display area, a driving thin film transistor and at least one switching thin film transistor in the display area, and an organic light device in the display area, wherein the driving thin film transistor and the switching thin film transistor include respectively an oxide semiconductor layer, and wherein a surface treating layer including a pattern of protrusions is on an upper surface of the oxide semiconductor layer of the driving thin film transistor.

Abstract: A display panel according to one embodiment of the present disclosure includes a substrate, an active electrode over the substrate and including a source region, a drain region, and a channel region, and an active upper electrode of a curved shape over the active electrode. The channel region of the active electrode and the active upper electrode may overlap each other and the channel region may have a same shape as the active upper electrode. Accordingly, a driving element included in the display panel may generate a high driving current and the degree of integration in a pixel may be improved.

Abstract: A display device according to one embodiment of the present disclosure may include a substrate including a plurality of concave portions, light emitting elements disposed at the plurality of concave portions, a first insulating layer disposed on the substrate and the light emitting element, a transistor disposed on the first insulating layer and including an active electrode and a gate electrode, a first hole included in the active electrode, a second hole included in the first insulating layer, and a connection electrode disposed in the first hole and the second hole, wherein the light emitting element may be electrically connected to the active electrode by the connection electrode.

Abstract: Embodiments of the present disclosure are related to a thin film transistor and a display device, as disposing a capacitor electrode on a gate electrode of the thin film transistor including double gate electrodes, an area where a storage capacitor occupies in a subpixel is reduced and a space availability can be improved.

Abstract: A driving thin-film transistor can include a substrate; a first active layer disposed on the substrate and including a first protruding portion; a second active layer overlapping with the first active layer and including a second protruding portion; a gate electrode disposed between the first active layer and the second active layer; a source electrode connected to the first protruding portion of the first active layer; and a drain electrode connected to the second protruding portion of the second active layer, in which the first protruding portion of the first active layer and the second protruding portion of the second active layer are located at different positions.

Abstract: A driving thin-film transistor can include a substrate; a first active layer disposed on the substrate and including a first protruding portion; a second active layer overlapping with the first active layer and including a second protruding portion; a gate electrode disposed between the first active layer and the second active layer; a source electrode connected to the first protruding portion of the first active layer; and a drain electrode connected to the second protruding portion of the second active layer, in which the first protruding portion of the first active layer and the second protruding portion of the second active layer are located at different positions.