Abstract: A semiconductor device includes: a substrate; a first interlayer insulating layer on the substrate; a first wiring pattern in a first trench of the first interlayer insulating layer; a second interlayer insulating layer on the first interlayer insulating layer; a second wiring pattern in a second trench of the second interlayer insulating layer; a third interlayer insulating layer on the second interlayer insulating layer; a third wiring pattern in a third trench of the third interlayer insulating layer, and including a wiring barrier layer and a wiring filling layer, wherein the wiring filling layer contacts the third interlayer insulating layer; a via trench extending from the first wiring pattern to the third trench; and a via including a via barrier layer and a via filling layer. The via barrier layer is in the via trench. The via filling layer contacts the first wiring pattern and the wiring filling layer.

Abstract: Disclosed are a method for fabricating a conductive film, and a conductive film fabricated by the same. The method comprises: forming a mixed solution consisting of at least one of a metallic precursor and a conductive polymer; spraying atomized droplets of the mixed solution on a surface of a substrate so as to form conductive frames; and coupling carbon nanotubes to the conductive frames so as to enhance electric conductivity. Accordingly, the conductive film can have enhanced electric conductivity, and can be easily fabricated.