Abstract: A method of improving performance of a dual Vt integrated circuit is disclosed in which a first value is calculated for each transistor of the integrated circuit that has a first threshold voltage level. The first value is based at least in part on delay and leakage of the circuit calculated as if the corresponding transistor had a second threshold voltage level. One transistor is then selected based on the first values. The threshold voltage of the selected transistor is then set to the second threshold voltage level. The area of at least one transistor within the circuit is modified, and the circuit is then sized to a predetermined area. The process may then be repeated if the circuit performance fails to meet a defined constraint.

Abstract: A solution to perform cross coupling delay characterization for integrated circuits and other microprocessor applications. The invention properly models the integrated circuit in various configurations at various times to accommodate the non-linearities associated with driver circuitry and the undesirable capacitive coupling between nets within the integrated circuit, specifically those that are located within close proximity to one another and that generate deleterious effects of the transitions of the drivers from low to high, and from high to low. The invention provides for a computationally efficient solution to perform the delay characterization of the speeding up and slowing down of individual transition operations within the microprocessor.

Abstract: Method for generating a set of switching vectors where each vector S1-Si causes the output X to transition in the predetermined way provided that the input A transitions in the selected way. This method may be used for any electrical circuit cluster, including the simple one illustrated in FIG. 3. This method handles any number of side inputs, gate clusters which have feedback within the gate cluster, and gate clusters which have internal nodes that may be in a third state other than a logic level one or a logic level zero (e.g. a high impedance state).

Abstract: A cell library (21) is optimized for specific operating characteristics. A stimulus file (23) is divided into a number of simulation run files. The simulation run files (27) are distributed to more than one computer work station so that the simulation of the cell occurs in parallel. The netlist (24) of each cell is parameterized to allow the cell to be changed and resimulated to better meet the specific operating characteristics. A cost function (32) is provided which uses the results of a transistor level simulation to calculate the quality of the cell design relative to the specific operating characteristics. Simulated annealing (34) is used to generate new simulation parameter values from a cost generated from the cost function (32). The cell is resimulated a number of times to optimize for the specific operating characteristics and the best design is retained for a new cell library (39). The process is repeated for each cell of the cell library (21).