Patents by Inventor Supriya Ghosh
Supriya Ghosh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240145235Abstract: The present disclosure generally relates to methods for forming silicon nitride layers and silicon nitride structures on substrates. In an embodiment, the method includes positioning a substrate having at least one feature thereon in a process chamber; depositing a first silicon layer on the substrate and the at least one feature; nitriding the first silicon layer to form a first silicon nitride layer on the substrate and the at least one feature; selectively inhibiting silicon nucleation on a portion of the first silicon nitride layer to form an inhibited profile; selectively depositing a second silicon layer on the first silicon nitride layer in accordance with the inhibited profile; and nitriding the second silicon layer to form a second silicon nitride layer disposed directly on the first silicon nitride layer.Type: ApplicationFiled: October 26, 2023Publication date: May 2, 2024Inventors: Zeqing SHEN, Supriya GHOSH, Susmit Singha ROY, Abhijit B. MALLICK
-
Publication number: 20240026527Abstract: A method of forming a high aspect ratio structure within a 3D NAND structure is provided. The method includes delivering a precursor to a high aspect ratio opening disposed within a multilayer stack having two or more alternating layers. The precursor is selected from the group consisting of a diaminosilane, an aminosilane, and a combination thereof. The method includes delivering an oxygen-containing compound to the high aspect ratio opening. The precursor and the oxygen-containing compound are alternated cyclically to fill the high aspect ratio opening.Type: ApplicationFiled: July 20, 2023Publication date: January 25, 2024Applicant: Applied Materials, Inc.Inventors: Geetika BAJAJ, Supriya GHOSH, Susmit Singha ROY, Darshan THAKARE, Gopi Chandran RAMACHANDRAN, Bhaskar Jyoti BHUYAN, Abhijit B. MALLICK
-
Publication number: 20230360924Abstract: Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.Type: ApplicationFiled: May 5, 2022Publication date: November 9, 2023Applicant: Applied Materials, Inc.Inventors: Supriya Ghosh, Susmit Singha Roy, Abhijit Basu Mallick, Shuchi Sunil Ojha, Praket Prakash Jha, Rui Cheng
-
Publication number: 20230360903Abstract: Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more features along the substrate. The methods may include providing an oxygen-containing precursor. The methods may include annealing the silicon-containing material with the oxygen-containing precursor. The annealing may cause the silicon-containing material to expand within the one or more features. The methods may include repeating one or more of the operations to iteratively fill the one or more features on the substrate.Type: ApplicationFiled: May 5, 2022Publication date: November 9, 2023Applicant: Applied Materials, Inc.Inventors: Supriya Ghosh, Susmit Singha Roy, Abhijit Basu Mallick
-
Publication number: 20230360967Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.Type: ApplicationFiled: May 9, 2022Publication date: November 9, 2023Applicant: Applied Materials, Inc.Inventors: Chandan Das, Susmit Singha Roy, Supriya Ghosh, John Sudijono, Abhijit Basu Mallick, Jiecong Tang
-
Publication number: 20230207314Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.Type: ApplicationFiled: December 27, 2021Publication date: June 29, 2023Applicant: Applied Materials, Inc.Inventors: Chandan Das, Susmit Singha Roy, Bhaskar Jyoti Bhuyan, Supriya Ghosh, Jiecong Tang, John Sudijono, Abhijit Basu Mallick, Mark Saly
-
Publication number: 20230090280Abstract: Exemplary semiconductor processing methods may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may include a low dielectric constant material defining one or more features, a liner extending across the low dielectric constant material and within the one or more features, and a metal-containing layer deposited on the liner and extending within the one or more features. The methods may include forming a layer of material on at least a portion of the liner and the metal-containing layer. The layer of material may include graphene. The methods may include removing substantially all of the portion of the layer of material on the liner.Type: ApplicationFiled: September 23, 2021Publication date: March 23, 2023Applicant: Applied Materials, Inc.Inventors: Supriya Ghosh, Susmit Singha Roy, Abhijit Basu Mallick