Abstract: A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.

Abstract: A condensate and feedwater system includes: a deaerator circulation pump that returns condensate water flowing out from a deaerator to a part of a condensate line between a heater and the deaerator; an apparatus to be supplied with part of the condensate water flowing from the heater toward the deaerator, through a supply line branched from the condensate line; a supply line shutoff valve that switches between communication and interruption of the supply line; and a controller that controls opening/closing of the supply line shutoff valve and driving/stopping of the deaerator circulation pump. The controller closes the supply line shutoff valve from an open state at normal operation and at least temporarily drives the deaerator circulation pump from a stopped state at normal operation, in condenser throttling in which supply of extraction steam of a steam turbine to the heater and the deaerator is reduced as compared to that at normal operation and a deaerator water level control valve is closed.

Abstract: A switching device, comprising an anti-ferromagnet structure having an upper layer and a lower layer, the upper layer and lower layer anti-ferromagnetically coupled by an exchange coupling layer, the upper and lower layer formed of a similar material but having differing volumes, and wherein the device is configured to inject symmetrically spin-polarized currents through the upper and lower layers to achieve magnetic switching of the anti-ferromagnet structure.

Abstract: A condensate and feedwater system includes: a deaerator circulation pump that returns condensate water flowing out from a deaerator to a part of a condensate line between a heater and the deaerator; an apparatus to be supplied with part of the condensate water flowing from the heater toward the deaerator, through a supply line branched from the condensate line; a supply line shutoff valve that switches between communication and interruption of the supply line; and a controller that controls opening/closing of the supply line shutoff valve and driving/stopping of the deaerator circulation pump. The controller closes the supply line shutoff valve from an open state at normal operation and at least temporarily drives the deaerator circulation pump from a stopped state at normal operation, in condenser throttling in which supply of extraction steam of a steam turbine to the heater and the deaerator is reduced as compared to that at normal operation and a deaerator water level control valve is closed.

Abstract: A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.

Abstract: A two-terminal stochastic switch is disclosed. The switch includes a magnetic tunnel junction (MTJ) stack, an access switch controlled by a first terminal and coupled to the MTJ stack, such that when the access switch is on, electrical current flows from a first source coupled to the MTJ stack, through the MTJ stack, and through the access switch to a second source, and a digital buffer coupled to the MTJ stack and the access switch which is configured to transform an analog signal associated with a voltage division across the MTJ stack and the access switch to a digital signal, output of the digital buffer forming a second terminal.

Abstract: A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.

Abstract: A spintronic memory device having a spin momentum-locking (SML) channel, a nanomagnet structure (NMS) disposed on the SML, and a plurality of normal metal electrodes disposed on the SML. The magnetization orientation of the NMS is controlled by current injection into the SML through normal metal electrode. The magnetization orientation of the NMS is determined by measuring voltages across the NMS and the SML while flowing charge current through the SML via the normal metal electrodes.

Abstract: A two-terminal stochastic switch is disclosed. The switch includes a magnetic tunnel junction (MTJ) stack, an access switch controlled by a first terminal and coupled to the MTJ stack, such that when the access switch is on, electrical current flows from a first source coupled to the MTJ stack, through the MTJ stack, and through the access switch to a second source, and a digital buffer coupled to the MTJ stack and the access switch which is configured to transform an analog signal associated with a voltage division across the MTJ stack and the access switch to a digital signal, output of the digital buffer forming a second terminal.

Abstract: A switching device, comprising an anti-ferromagnet structure having an upper layer and a lower layer, the upper layer and lower layer anti-ferromagnetically coupled by an exchange coupling layer, the upper and lower layer formed of a similar material but having differing volumes, and wherein the device is configured to inject symmetrically spin-polarized currents through the upper and lower layers to achieve magnetic switching of the anti-ferromagnet structure.

Abstract: A spintronic memory device having a spin momentum-locking (SML) channel, a nanomagnet structure (NMS) disposed on the SML, and a plurality of normal metal electrodes disposed on the SML. The magnetization orientation of the NMS is controlled by current injection into the SML through normal metal electrode. The magnetization orientation of the NMS is determined by measuring voltages across the NMS and the SML while flowing charge current through the SML via the normal metal electrodes.

Abstract: A switching device is disclosed. The switching device includes a spin-orbit coupling (SOC) layer, a pure spin conductor (PSC) layer disposed atop the SOC layer, a ferromagnetic (FM) layer disposed atop the PSC layer, and a normal metal (NM) layer sandwiched between the PSC layer and the FM layer. The PSC layer is a ferromagnetic insulator (FMI) is configured to funnel spins from the SOC layer onto the NM layer and to further provide a charge insulation so as to substantially eliminate current shunting from the SOC layer while allowing spins to pass through. The NM layer is configured to funnel spins from the PSC layer into the FM layer.

Abstract: A neuron and synapse implementation is disclosed which incorporates a circuit element that includes first and second nanomagnets and first and second fixed magnets. The first nanomagnet is inductively coupled to a first current carrying element, and is configured to change polarity responsive to current in the first current carrying element. In one example, the first current carrying element includes a spin Hall effect substrate. The second nanomagnet is magnetically coupled to the first nanomagnet, and is inductively coupled to a second current carrying element. The first fixed magnet is disposed on the second nanomagnet and has a first fixed polarity, and second fixed magnet disposed on the second nanomagnet and has a second fixed polarity.

Abstract: A circuit element includes first and second nanomagnets and first and second fixed magnets. The first nanomagnet is inductively coupled to a first current carrying element, and is configured to change polarity responsive to current in the first current carrying element. In one example, the first current carrying element includes a spin Hall effect substrate. The second nanomagnet is magnetically coupled to the first nanomagnet, and is inductively coupled to a second current carrying element. The first fixed magnet is disposed on the second nanomagnet and has a first fixed polarity, and second fixed magnet disposed on the second nanomagnet and has a second fixed polarity.

Abstract: A neuron and synapse implementation is disclosed which incorporates a circuit element that includes first and second nanomagnets and first and second fixed magnets. The first nanomagnet is inductively coupled to a first current carrying element, and is configured to change polarity responsive to current in the first current carrying element. In one example, the first current carrying element includes a spin Hall effect substrate. The second nanomagnet is magnetically coupled to the first nanomagnet, and is inductively coupled to a second current carrying element. The first fixed magnet is disposed on the second nanomagnet and has a first fixed polarity, and second fixed magnet disposed on the second nanomagnet and has a second fixed polarity.

Abstract: A circuit element includes first and second nanomagnets and first and second fixed magnets. The first nanomagnet is inductively coupled to a first current carrying element, and is configured to change polarity responsive to current in the first current carrying element. In one example, the first current carrying element includes a spin Hall effect substrate. The second nanomagnet is magnetically coupled to the first nanomagnet, and is inductively coupled to a second current carrying element. The first fixed magnet is disposed on the second nanomagnet and has a first fixed polarity, and second fixed magnet disposed on the second nanomagnet and has a second fixed polarity.

Abstract: Illustrative embodiments of all-spin logic devices, circuits, and methods are disclosed. In one embodiment, an all-spin logic device may include a first nanomagnet, a second nanomagnet, and a spin-coherent channel extending between the first and second nanomagnets. The spin-coherent channel may be configured to conduct a spin current from the first nanomagnet to the second nanomagnet to determine a state of the second nanomagnet in response to a state of the first nanomagnet.

Abstract: Illustrative embodiments of all-spin logic devices, circuits, and methods are disclosed. In one embodiment, an all-spin logic device may include a first nanomagnet, a second nanomagnet, and a spin-coherent channel extending between the first and second nanomagnets. The spin-coherent channel may be configured to conduct a spin current from the first nanomagnet to the second nanomagnet to determine a state of the second nanomagnet in response to a state of the first nanomagnet.

Abstract: A transistor device may comprise a source having a first ferromagnetic contact thereto, a drain having a second ferromagnetic contact thereto, an electrically conductive gate positioned over a channel region separating the source and the drain, and an electrically insulating layer disposed between the gate and the channel region. The first and second ferromagnetic contacts have anti-parallel magnetic orientations relative to each other. The electrically insulating layer includes a number of paramagnetic impurities each having two spin states such that electrons interacting with the paramagnetic impurities cause the paramagnetic impurities to flip between the two spin states.

Abstract: A transistor device may comprise a source having a first ferromagnetic contact thereto, a drain having a second ferromagnetic contact thereto, an electrically conductive gate positioned over a channel region separating the source and the drain, and an electrically insulating layer disposed between the gate and the channel region. The first and second ferromagnetic contacts have anti-parallel magnetic orientations relative to each other. The electrically insulating layer includes a number of paramagnetic impurities each having two spin states such that electrons interacting with the paramagnetic impurities cause the paramagnetic impurities to flip between the two spin states.