Abstract: A photovoltaic cell (10) is disclosed that includes an active layer (20) sandwiched by top and bottom graphene-ferroelectric electrodes (30T, 30B) each having a graphene layer (32) and a polarized ferroelectric layer (34). The polarized ferroelectric layer defines an internal electric field (EI). Light (50) irradiates the active layer through the top graphene-ferroelectric electrode, causing the generation in the active layer of electrons (e) and holes (h) as charge carriers. The internal electric field causes the electrons and holes to move towards opposite electrodes, giving rise to a photocurrent (ipc), while also mitigating undesirable charge-carrier recombination.

Abstract: In accordance with an embodiment of the invention, there is provided a graphene ferroelectric device. The device comprises a graphene transistor channel and a ferroelectric gate of the graphene transistor channel, the ferroelectric gate comprising a linear polarization at a first applied gate voltage less than a threshold voltage, and a hysteretic polarization at a second applied gate voltage greater than the threshold voltage. The device may be configured to undergo optical switching of the graphene transistor channel between a high resistance state and a low resistance state in response to photoillumination of the device.