Abstract: A device for vascular denervation comprising a catheter for insertion into a vessel, at least one elongated catheter arm having alternating regions of flexible joints and rigid blocks along the at least one catheter arm, wherein each of the at least one catheter arm comprises at least one tactile sensor and at least one temperature sensor; at least one electrode and electrical circuitry disposed on each of the at least one catheter arm and at least one linkage connected to all of the elongated catheter arms. A method for batch fabricating a plurality of catheter arms for the vascular denervation device is also provided and comprises the steps of depositing a first polymer coating on a semiconductor substrate, forming metal traces on the first polymer coating, patterning and etching the substrate to the first polymer coating to create flexible joint regions.

Abstract: A device for vascular denervation comprising a catheter for insertion into a vessel, at least one elongated catheter arm having alternating regions of flexible joints and rigid blocks along the at least one catheter arm, wherein each of the at least one catheter arm comprises at least one tactile sensor and at least one temperature sensor; at least one electrode and electrical circuitry disposed on each of the at least one catheter arm and at least one linkage connected to all of the elongated catheter arms. A method for batch fabricating a plurality of catheter arms for the vascular denervation device is also provided and comprises the steps of depositing a first polymer coating on a semiconductor substrate, forming metal traces on the first polymer coating, patterning and etching the substrate to the first polymer coating to create flexible joint regions.

Abstract: In one embodiment, the invention includes first and second transmission lines fabricated in a redistribution layer over a semiconductor die. The first transmission line has a first distance from a first ground return path formed in a first metal level. The first transmission line has a first impedance corresponding to the first distance. In other words, the impedance of the first transmission line is affected by the distance between the first transmission line and the first ground return path. Similar to the first transmission line, the second transmission line has a second distance from a second ground return path formed in a second metal level. The second transmission line has a second impedance corresponding to the second distance. In other words, the impedance of the second transmission line is affected by the distance between the second transmission line and the second ground return path.

Abstract: In one embodiment, the invention includes first and second transmission lines fabricated in a redistribution layer over a semiconductor die. The first transmission line has a first distance from a first ground return path formed in a first metal level. The first transmission line has a first impedance corresponding to the first distance. In other words, the impedance of the first transmission line is affected by the distance between the first transmission line and the first ground return path. Similar to the first transmission line, the second transmission line has a second distance from a second ground return path formed in a second metal level. The second transmission line has a second impedance corresponding to the second distance. In other words, the impedance of the second transmission line is affected by the distance between the second transmission line and the second ground return path.

Abstract: Method and structure for temperature stabilization in semiconductor devices are disclosed. In one embodiment, a carbon-based polymer is deposited on top of an interconnect metal line in the semiconductor die where relatively large power dissipation is known to occur. Reduction of the range of temperature excursions in the semiconductor die is achieved since the polymer acts as a cushion to dampen the range of temperature excursions of the semiconductor die. During occurrence of power pulses in the semiconductor die, the polymer absorbs energy from the interconnect metal, and thus from the semiconductor devices that are connected to the interconnect metal, by expanding without a rise in the temperature of the polymer. The energy generated when power pulses are being dissipated in the semiconductor die does not result in a substantial rise in the temperature of the polymer.

Abstract: An improved microelectronic interconnect structure and methods for forming the structure are disclosed. The microelectronic interconnect structure includes an organic-based coating that facilitates formation of electrical connections to the structure. The coating may be used to reduce oxidation of copper interconnects, which allows wire or bump attachment to the copper interconnect using conventional wire bonding or bump interconnect methods and apparatus. The coating is applied during a post chemical mechanical polishing process by placing the interconnect structure into a solution.

Abstract: A method and apparatus are disclosed for using formic acid vapor as a reducing agent during wirebonding operations to a semiconductor chip. The method and apparatus are particularly useful when wirebonding to copper metal pads. While maintaining a preferred reaction temperature between 190° C. and 210° C., a copper metal pad is exposed to formic acid vapor during wirebonding to remove copper oxidation from the pad to permit a good wirebond to be achieved. A less preferred reaction temperature range is 150° C. to 360° C. In accordance with another aspect of the invention, the concentration of formic acid vapor is controlled by mixing formic acid vapor with a gas such as nitrogen that does not participate in the reduction chemical reactions. Reaction by-products, such as carbon monoxide and hydrogen gas, may be recirculated back to further participate in the reduction chemical reactions.