Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process.

Abstract: A piezoelectric device comprises: a substrate (12) and a lead magnesium niobate-lead titanate (PMNPT) piezoelectric film on the substrate (12). The PMNPT film comprises: a thermal oxide layer (20) on the substrate (12); a first electrode above on the thermal oxide layer (20); a seed layer (26) above the first electrode; a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer (16) on the seed layer (26), and a second electrode on the PMNPT piezoelectric layer (16). The PMNPT film comprises a piezoelectric coefficient (d33) of greater than or equal to 200 pm/V.

Abstract: Examples disclosed herein relate to piezoelectric devices and methods of patterning piezoelectric layers for piezoelectric device fabrication. In certain embodiments, a piezoelectric layer disposed over a bottom electrode layer on a substrate is selectively etched via a laser etching process to expose portions of the bottom electrode layer. The laser etching process of the piezoelectric layer facilitates improvement of throughput and reduces hazardous byproduct production during fabrication of piezoelectric devices.

Abstract: Methods of removing native oxide layers and depositing dielectric layers having a controlled number of active sites on MEMS devices for biological applications are disclosed. In one aspect, a method includes removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands in vapor phase to volatize the native oxide layer and then thermally desorbing or otherwise etching the volatized native oxide layer. In another aspect, a method includes depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate. In yet another aspect, a method includes both removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands and depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate.

Abstract: A hybrid halide perovskite film and methods of forming a hybrid halide perovskite film on a substrate are described. The film is formed on the substrate by depositing an organic solution on a substrate, heating the substrate and the organic solution to form an organic layer on the substrate, depositing an inorganic layer on the organic layer, and heating the substrate having the inorganic layer thereon to form a hybrid halide perovskite film. In some embodiments, the hybrid halide perovskite film comprises a CH[NH2]2+MX3 compound, where M is selected from the group consisting of Sn, Pb, Bi, Mg and Mn, and where X is selected from the group consisting of I, Br and Cl. In other embodiments, the hybrid halide perovskite film comprises a FAMX3 compound. Methods of forming a piezoelectric device are also disclosed.

Abstract: Doped-aluminum nitride (doped-AlN) films and methods of manufacturing doped-AlN films are disclosed. Some methods comprise forming alternating pinning layers and doped-AlN layers including a dopant selected from the group consisting of Sc, Y, Hf, Mg, Zr and Cr, wherein the pinning layers pin the doped-AlN layers to a c-axis orientation. Some methods include forming a conducting layer including a material selected from the group consisting of Mo, Pt, Ta, Ru, LaNiO3 and SrRuO3. Some methods include forming a thermal oxide layer having silicon oxide on a silicon substrate. Piezoelectric devices comprising the doped-AlN film are also disclosed.

Abstract: A method of forming a fluorinated metal film is provided. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.

Abstract: Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber includes a shield comprising an inner wall with an innermost diameter configured to surround a target when disposed in the physical vapor deposition chamber, wherein a ratio of a surface area of the shield to a planar area of the inner diameter is about 3 to about 10.

Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process.

Abstract: Embodiments described herein provide a method of forming amorphous a fluorinated metal film. The method includes positioning an object in an atomic layer deposition (ALD) chamber having a processing region, depositing a metal-oxide containing layer on an object using an atomic layer deposition (ALD) process, depositing a metal-fluorine layer on the metal-oxide containing layer using an activated fluorination process, and repeating the depositing the metal-oxide containing layer and the depositing the metal-oxide containing layer until a fluorinated metal film with a predetermined film thickness is formed. The activated fluorination process includes introducing a first flow of a fluorine precursor (FP) to the processing region. The FP includes at least one organofluorine reagent or at least one fluorinated gas.

Abstract: Methods of removing native oxide layers and depositing dielectric layers having a controlled number of active sites on MEMS devices for biological applications are disclosed. In one aspect, a method includes removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands in vapor phase to volatize the native oxide layer and then thermally desorbing or otherwise etching the volatized native oxide layer. In another aspect, a method includes depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate. In yet another aspect, a method includes both removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands and depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate.

Abstract: Synchronous measuring terminals 5 synchronously measure phasor quantity D101 of a voltage/current at respective measurement points 1 and 2. A data-set creating block 91 of a short-circuit capacity monitoring device 7 creates, for each measurement cycle ?t, a data set D102 containing n pieces of data based on the phasor quantities D101 of voltage and current. A phase correcting block 92 performs a phase correction on the phasor quantity using the data set D102 to create a data set D102?, and a backward impedance estimating block 93 estimates a backward impedance D103 using the data set D102?.

Abstract: The disclosure concerns a control device for controlling an information device arrangement. Control device includes camera means (CAM) and display means (VF) to allow operating of a destined location of the information surface. Destined location is adapted for determination from the control information being in the image information (IMAGE) formed by the camera means (CAM). The control device is arranged at least to determine from the control information of the image information (IMAGE) data (x1, y1, hei, wid, gx, gy) in order to determine a continuous stream of locations pointed by the control device. System, method and program products are also targets of the present invention.

Abstract: A total green, eco-friendly process for the synthesis of new acceptor molecule [6,6]-phenyl-C61-butyric acid pentyl ester (PC61BP) in high yields is carried under aerobic conditions showing better performance as acceptor in organic solar cells. More importantly this process causes the low cost synthesis of PC61BP in good yield without involving harmful and costly catalysts or chemicals.

Abstract: The disclosure concerns a control device for controlling an information device arrangement. Control device includes camera means (CAM) and display means (VF) to allow operating of a destined location of the information surface. Destined location is adapted for determination from the control information being in the image information (IMAGE) formed by the camera means (CAM). The control device is arranged at least to determine from the control information of the image information (IMAGE) data (x1, y1, hei, wid, gx, gy) in order to determine a continuous stream of locations pointed by the control device. System, method and program products are also targets of the present invention.

Abstract: A total green, eco-friendly process for the synthesis of new acceptor molecule [6,6]-phenyl-C61-butyric acid pentyl ester (PC61BP) in high yields is carried under aerobic conditions showing better performance as acceptor in organic solar cells. More importantly this process causes the low cost synthesis of PC61BP in good yield without involving harmful and costly catalysts or chemicals.

Abstract: The disclosure concerns a control device for controlling an information device arrangement. Control device includes camera means (CAM) and display means (VF) to allow operating of a destined location of the information surface. Destined location is adapted for determination from the control information being in the image information (IMAGE) formed by the camera means (CAM). The control device is arranged at least to determine from the control information of the image information (IMAGE) data (x1, y1, hei, wid, gx, gy) in order to determine a continuous stream of locations pointed by the control device. System, method and program products are also targets of the present invention.

Abstract: Synchronous measuring terminals 5 synchronously measure phasor quantity D101 of a voltage/current at respective measurement points 1 and 2. A data-set creating block 91 of a short-circuit capacity monitoring device 7 creates, for each measurement cycle ?t, a data set D102 containing n pieces of data based on the phasor quantities D101 of voltage and current. A phase correcting block 92 performs a phase correction on the phasor quantity using the data set D102 to create a data set D102?, and a backward impedance estimating block 93 estimates a backward impedance D103 using the data set D102?.

Abstract: An approach is provided for zone-based device interaction. The approach involves causing, at least in part, an activation of at least one zone at a device. The at least one zone specifies, at least in part, user interaction configuration information. The approach also involves processing and/or facilitating a processing of the user interaction configuration information to select one or more applications, one or more services, application data, service data, or a combination thereof. The approach further involves causing, at least in part, a rendering of a user interface for presenting one or more representations of the one or more applications, the one or more services, the application data, the service data, or a combination.

Abstract: The invention concerns a control device for controlling an information device arrangement. Control device includes camera means (CAM) and display means (VF) to allow operating of a destined location of the information surface. Destined location is adapted for determination from the control being in the image information (IMAGE) formed by the camera means (CAM). The control device is arranged at least to determine from the control information of the image information (IMAGE) data (x1, y1, hei, wid, gx, gy) in order to determine a continuous stream of locations pointed by the control device. System, method and program products are also targets of the present invention.