Abstract: A semiconductor device, and a method of its manufacture, are disclosed. The semiconductor device includes a substrate having a solder mask. A plurality of pillar bases are formed on the solder mask, and a plurality of solder pillars are applied to the pillar bases. The plurality of solder pillars support one or more semiconductor die above the substrate and the number of solder pillars prevent stresses in the one or more semiconductor die which could otherwise damage the semiconductor die.

Abstract: A semiconductor device, and a method of its manufacture, are disclosed. The semiconductor device includes a substrate having a solder mask. A plurality of pillar bases are formed on the solder mask, and a plurality of solder pillars are applied to the pillar bases. The plurality of solder pillars support one or more semiconductor die above the substrate and the number of solder pillars prevent stresses in the one or more semiconductor die which could otherwise damage the semiconductor die.

Abstract: A semiconductor device is disclosed including an electromagnetic radiation shield. The device may include a substrate having a shield ring defined in a conductance pattern on a surface of the substrate. One or more semiconductor die may be affixed and electrically coupled to the substrate. The one or more semiconductor die may then be encapsulated in molding compound. Thereafter, a metal may be plated around the molding compound and onto the shield ring to form an EMI/RFI shield for the device.

Abstract: A semiconductor device is disclosed including an electromagnetic radiation shield. The device may include a substrate having a shield ring defined in a conductance pattern on a surface of the substrate. One or more semiconductor die may be affixed and electrically coupled to the substrate. The one or more semiconductor die may then be encapsulated in molding compound. Thereafter, a metal may be plated around the molding compound and onto the shield ring to form an EMI/RFI shield for the device.

Abstract: A multi-die semiconductor device is disclosed. The device may include one or more first-sized die on a substrate and one or more second-sized die affixed over the one or more first-sized die. The second-sized die may have a larger footprint than the first-sized die. An internal molding compound may be provided on the substrate having a footprint the same size as the second-sized die. The second-sized die may be supported on the internal molding compound. Thereafter, the first and second-sized die and the internal molding compound may be encapsulated in an external molding compound.