Patents by Inventor Suresh Lakkapragada
Suresh Lakkapragada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7767956Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: GrantFiled: December 4, 2008Date of Patent: August 3, 2010Assignee: KLA-Tencor Technologies Corp.Inventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy
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Publication number: 20090079974Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: ApplicationFiled: December 4, 2008Publication date: March 26, 2009Applicant: KLA-TENCOR TECHNOLOGIES CORPORATIONInventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy
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Patent number: 7462814Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: GrantFiled: February 1, 2006Date of Patent: December 9, 2008Assignee: KLA-Tencor Technologies Corp.Inventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy
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Publication number: 20060138366Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: ApplicationFiled: February 1, 2006Publication date: June 29, 2006Inventors: Suresh Lakkapragada, Kyle Brown, Matt Hankinson, Ady Levy
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Patent number: 6987572Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: GrantFiled: February 14, 2003Date of Patent: January 17, 2006Assignee: KLA-Tencor Technologies Corp.Inventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy
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Patent number: 6689519Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: GrantFiled: May 4, 2001Date of Patent: February 10, 2004Assignee: KLA-Tencor Technologies Corp.Inventors: Kyle A. Brown, Matt Hankinson, Ady Levy, Suresh Lakkapragada
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Publication number: 20040005507Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: ApplicationFiled: March 27, 2003Publication date: January 8, 2004Applicant: KLA-Tencor, Inc.Inventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy, Ibrahim Abdul-Halim
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Publication number: 20030148198Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: ApplicationFiled: February 14, 2003Publication date: August 7, 2003Inventors: Suresh Lakkapragada, Kyle A. Brown, Matt Hankinson, Ady Levy
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Publication number: 20020072001Abstract: Methods and systems for evaluating and controlling a lithography process are provided. For example, a method for reducing within wafer variation of a critical metric of a lithography process may include measuring at least one property of a resist disposed upon a wafer during the lithography process. A critical metric of a lithography process may include, but may not be limited to, a critical dimension of a feature formed during the lithography process. The method may also include altering at least one parameter of a process module configured to perform a step of the lithography process to reduce within wafer variation of the critical metric. The parameter of the process module may be altered in response to at least the one measured property of the resist.Type: ApplicationFiled: May 4, 2001Publication date: June 13, 2002Inventors: Kyle A. Brown, Matt Hankinson, Ady Levy, Suresh Lakkapragada