Abstract: An apparatus include a device substrate having an upper surface, and a frame layer having an upper surface. The frame layer is disposed over the upper surface of the device substrate, and a first opening exists in the frame layer. The apparatus also includes a seed layer disposed over the device substrate and substantially bounded by the first opening; and a lid layer having an upper surface. The lid layer is disposed over the upper surface of the frame layer. A second opening exists in the lid layer, and the second opening is aligned with the first opening. The apparatus also includes an electrically and thermally conductive pillar disposed in the first opening and the second opening.

Abstract: An acoustic resonator structure comprises: a substrate comprising a cavity having a plurality of sides; a first electrode disposed over the cavity; a first connection portion that connects to the first electrode over only one side of the plurality of sides of the cavity; a piezoelectric layer disposed over at least a portion of the first electrode; a second electrode disposed over the piezoelectric layer; and a second connection portion that connects to the second electrode over only the one side of the plurality of sides. The second connection portion does not overlap the first connection portion, and a contacting overlap of the first electrode, the piezoelectric layer and the second electrode provides an active area of the acoustic resonator.

Abstract: A surface acoustic wave (SAW) device includes: a base substrate; a piezo-electric material layer; at least one interdigitated electrode pair disposed on the piezo-electric material layer; and an acoustic wave suppression layer disposed between the piezo-electric material layer and the base substrate, the acoustic wave suppression layer being configured to suppress an acoustic wave propagating in a direction from the piezo-electric material layer to the base substrate.

Abstract: An apparatus include a device substrate having an upper surface, and a frame layer having an upper surface. The frame layer is disposed over the upper surface of the device substrate, and a first opening exists in the frame layer. The apparatus also includes a seed layer disposed over the device substrate and substantially bounded by the first opening; and a lid layer having an upper surface. The lid layer is disposed over the upper surface of the frame layer. A second opening exists in the lid layer, and the second opening is aligned with the first opening. The apparatus also includes an electrically and thermally conductive pillar disposed in the first opening and the second opening.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

Abstract: An microelectronic device includes a substrate, a piezoelectric component formed over the substrate, at least one trench formed in the substrate. The piezoelectric component has a corresponding resonance frequency. The at least one trench is configured to reduce mechanical stress on the piezoelectric component, in response to force applied to the substrate, for stabilizing the resonance frequency.

Abstract: An acoustic resonator structure comprises: a substrate comprising a cavity having a plurality of sides; a first electrode disposed over the cavity; a first connection portion that connects to the first electrode over only one side of the plurality of sides of the cavity; a piezoelectric layer disposed over at least a portion of the first electrode; a second electrode disposed over the piezoelectric layer; and a second connection portion that connects to the second electrode over only the one side of the plurality of sides. The second connection portion does not overlap the first connection portion, and a contacting overlap of the first electrode, the piezoelectric layer and the second electrode provides an active area of the acoustic resonator.

Abstract: A surface acoustic wave (SAW) device includes: a base substrate; a piezo-electric material layer; at least one interdigitated electrode pair disposed on the piezo-electric material layer; and an acoustic wave suppression layer disposed between the piezo-electric material layer and the base substrate, the acoustic wave suppression layer being configured to suppress an acoustic wave propagating in a direction from the piezo-electric material layer to the base substrate.

Abstract: An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

Abstract: A bulk acoustic wave (BAW) resonator device comprises a heating coil disposed over a first side of the piezoelectric layer and substantially around a perimeter adjacent to the active area of the acoustic resonator, the heating coil comprising a resistor configured to receive a heater current; and a heat sensor disposed over a second side of the piezoelectric layer and opposing the first side, the heat sensor configured to adjust the heater current in response to a temperature of the heating coil.

Abstract: An acoustic resonator device includes an annular acoustic resonator, a heater coil and a heat sensor. The annular acoustic resonator is positioned over a trench formed in a substrate of the acoustic resonator device. The heater coil is disposed around a perimeter of the annular acoustic resonator, the heater coil including a resistor configured to receive a heater current. The heat sensor is configured to adjust the heater current in response to a temperature of the heater coil. A feedback circuit is used to control a temperature of the acoustic resonator device.

Abstract: An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

Abstract: An film bulk acoustic wave resonator (FBAR) structure has an FBAR and a via disposed substantially directly beneath the FBAR. The via is in thermal contact with the FBAR. A plurality of vias may be included. The via(s) serve to dissipate heat generated by the FBAR structure during operation.

Abstract: An film bulk acoustic wave resonator (FBAR) structure has an FBAR and a via disposed substantially directly beneath the FBAR. The via is in thermal contact with the FBAR. A plurality of vias may be included. The via(s) serve to dissipate heat generated by the FBAR structure during operation.

Abstract: An acoustic resonator device includes an annular acoustic resonator, a heater coil and a heat sensor. The annular acoustic resonator is positioned over a trench formed in a substrate of the acoustic resonator device. The heater coil is disposed around a perimeter of the annular acoustic resonator, the heater coil including a resistor configured to receive a heater current. The heat sensor is configured to adjust the heater current in response to a temperature of the heater coil. A feedback circuit is used to control a temperature of the acoustic resonator device.

Abstract: An microelectronic device includes a substrate, a piezoelectric component formed over the substrate, at least one trench formed in the substrate. The piezoelectric component has a corresponding resonance frequency. The at least one trench is configured to reduce mechanical stress on the piezoelectric component, in response to force applied to the substrate, for stabilizing the resonance frequency.

Abstract: An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.

Abstract: An electro-optic structure, which may comprise an acousto-optic modulator for use in an opto-acoustic oscillator, comprises a plurality of rigidly connected resonator core components located movably separated over a substrate and anchored to the substrate at an anchor point. An actuator electrode is located separated from a first one of the rigidly connected resonator core components and an optical waveguide is located separated from a second one of the rigidly connected resonator core components. Radio frequency and direct current actuation of the actuator electrode provides a mechanical vibration in the first rigidly connected resonator core component that is mechanically coupled to the second rigidly connected resonator core component which serves to optically modulate light transported through the wave guide. Reverse operation is also contemplated. Embodiments also contemplate a third rigidly connected resonator core component as a radiation pressure driven detector.

Abstract: A bulk acoustic wave (BAW) resonator device comprises a heating cod disposed over a first side of the piezoelectric layer and substantially around a perimeter adjacent to the active area of the acoustic resonator, the heating coil comprising a resistor configured to receive a heater current; and a heat sensor disposed over a second side of the piezoelectric layer and opposing the first side, the heat sensor configured to adjust the heater current in response to a temperature of the heating coil.