Abstract: A one-time programming memory element, capable of being manufactured in a 0.13 ?m or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable of passing direct gate tunneling current. Also included is a write switch, having first and second switches coupled to the capacitor, and a read switch also coupled to the capacitor. The capacitor/transistor is one-time programmable as an anti-fuse by application of a program voltage across the oxide layer via the write switch to cause direct gate tunneling current to rupture the oxide layer to form a conductive path having resistance of approximately hundreds of ohms or less.

Abstract: A one-time programming memory element, capable of being manufactured in a 0.13 ?m or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable of passing direct gate tunneling current. Also included is a write circuit, having first and second switches coupled to the capacitor, and a read circuit also coupled to the capacitor. The capacitor/transistor is one-time programmable as an anti-fuse by application of a program voltage across the oxide layer via the write circuit to cause direct gate tunneling current to rupture the oxide layer to form a conductive path having resistance of approximately hundreds of ohms or less.

Abstract: A one-time programming memory element, capable of being manufactured in a 0.13 ?m or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable of passing direct gate tunneling current, and a switch having a voltage tolerance higher than that of the capacitor/transistor, wherein the capacitor/transistor is one-time programmable as an anti-fuse by application of a voltage across the oxide layer via the switch to cause direct gate tunneling current to thereby rupture the oxide layer to form a conductive path having resistance of approximately hundreds of ohms or less.

Abstract: A one-time programming memory element, capable of being manufactured in a 0.13 ?m or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable of passing direct gate tunneling current. Also included is a write switch, having first and second switches coupled to the capacitor, and a read switch also coupled to the capacitor. The capacitor/transistor is one-time programmable as an anti-fuse by application of a program voltage across the oxide layer via the write switch to cause direct gate tunneling current to rupture the oxide layer to form a conductive path having resistance of approximately hundreds of ohms or less.

Abstract: A method for testing a semiconductor wafer. An array of probes is coupled to the semiconductor wafer. Then a voltage difference is applied across a plurality of adjacent metal line pairs (e.g., wordline and/or bitline pairs) of one or more SRAM arrays of at least one die. Application of the voltage difference induces failure of metal stringers or defects between the adjacent lines. Additionally, the voltage can be applied across respective pairs of substantially all parallel metal lines of the one or more SRAM arrays of more that one die of the semiconductor wafer.

Abstract: A one-time programming memory element, capable of being manufactured in a 0.13 &mgr;m or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable of passing direct gate tunneling current. Also included is a write circuit, having first and second switches coupled to the capacitor, and a read circuit also coupled to the capacitor. The capacitor/transistor is one-time programmable as an anti-fuse by application of a program voltage across the oxide layer via the write circuit to cause direct gate tunneling current to rupture the oxide layer to form a conductive path having resistance of approximately hundreds of ohms or less.

Abstract: A one-time programing memory element, capable of being manufactured in a 0.13 &mgr;m or below CMOS technology, having a capacitor, or transistor configured as a capacitor, with an oxide layer capable of passing direct gate tunneling current, and a switch having a voltage tolerance higher than that of the capacitor/transistor, wherein the capacitor/transistor is one-time programmable as an anti-fuse by application of a voltage across the oxide layer via the switch to cause direct gate tunneling current to thereby rupture the oxide layer to form a conductive path having resistance of approximately hundreds of ohms or less.