Abstract: Various embodiments may provide a semiconductor package. The semiconductor package may include a routing layer including a plurality of first layer contact elements on a first side and a plurality of second layer contact elements on a second side opposite the first side, and a first semiconductor die including a plurality of first electrical die contact elements coupled to the plurality of first layer contact elements. The semiconductor package may further include a second semiconductor die including a plurality of second electrical die contact elements coupled to the plurality of second layer contact elements, and a mold structure covering the second semiconductor die. A first pitch between neighbouring first electrical die contact elements may be greater than a second pitch between neighbouring second electrical die contact elements.

Abstract: Various embodiments may relate to a method of forming a photonic integrated circuit package (PIC). The method may include forming a redistribution layer (RDL) over a carrier. The method may also include forming a through hole or cavity on the redistribution layer. The method may additionally include providing a stop-ring structure, the stop-ring structure including a ring of suitable material, the stop-ring structure defining a hollow space, over the redistribution layer so that the hollow space is over the through hole or cavity. The method may further include arranging a photonic integrated circuit (PIC) die over the redistribution layer so that the photonic integrated circuit (PIC) die is on the stop-ring structure. The method may also include forming a molded package by forming a mold structure to at least partially cover the photonic integrated circuit (PIC) die to form the photonic integrated circuit package.

Abstract: Various embodiments may relate to a method of forming a photonic integrated circuit package (PIC). The method may include forming a redistribution layer (RDL) over a carrier. The method may also include forming a through hole or cavity on the redistribution layer. The method may additionally include providing a stop-ring structure, the stop-ring structure including a ring of suitable material, the stop-ring structure defining a hollow space, over the redistribution layer so that the hollow space is over the through hole or cavity. The method may further include arranging a photonic integrated circuit (PIC) die over the redistribution layer so that the photonic integrated circuit (PIC) die is on the stop-ring structure. The method may also include forming a molded package by forming a mold structure to at least partially cover the photonic integrated circuit (PIC) die to form the photonic integrated circuit package.

Abstract: Various embodiments may provide an electrical connection structure. The electrical connection structure may include a first substrate having a first surface defining a cavity, and an inner wall defining a via extending from the cavity. The electrical connection structure may also include an interconnect structure provided in the via so that at least a portion of the interconnect structure protrudes into the cavity. The electrical connection structure may further include a second substrate having a second surface facing the first surface. The electrical connection structure may additionally include a connection element on the second surface. At least a portion of the connection element may be received in the cavity so that the connection element is in electrical connection with the interconnect structure.

Abstract: Various embodiments may provide an electrical connection structure. The electrical connection structure may include a first substrate having a first surface defining a cavity, and an inner wall defining a via extending from the cavity. The electrical connection structure may also include an interconnect structure provided in the via so that at least a portion of the interconnect structure protrudes into the cavity. The electrical connection structure may further include a second substrate having a second surface facing the first surface. The electrical connection structure may additionally include a connection element on the second surface. At least a portion of the connection element may be received in the cavity so that the connection element is in electrical connection with the interconnect structure.

Abstract: Various embodiments may provide a semiconductor package. The semiconductor package may include a routing layer including a plurality of first layer contact elements on a first side and a plurality of second layer contact elements on a second side opposite the first side, and a first semiconductor die including a plurality of first electrical die contact elements coupled to the plurality of first layer contact elements. The semiconductor package may further include a second semiconductor die including a plurality of second electrical die contact elements coupled to the plurality of second layer contact elements, and a mold structure covering the second semiconductor die. A first pitch between neighbouring first electrical die contact elements may be greater than a second pitch between neighbouring second electrical die contact elements.

Abstract: A method for testing a semiconductor wafer. An array of probes is coupled to the semiconductor wafer. Then a voltage difference is applied across a plurality of adjacent metal line pairs (e.g., wordline and/or bitline pairs) of one or more SRAM arrays of at least one die. Application of the voltage difference induces failure of metal stringers or defects between the adjacent lines. Additionally, the voltage can be applied across respective pairs of substantially all parallel metal lines of the one or more SRAM arrays of more that one die of the semiconductor wafer.

Abstract: A semiconductor wafer configured for in-process testing of integrated circuitry fabricated thereon. At least two die are separated by a scribe area, and each of the die has at least one complementary metal oxide silicon (CMOS) static random access memory (SRAM) array embedded therein among mixed-signal CMOS circuitry. The mixed-signal CMOS circuitry includes devices with larger feature sizes compared to similar devices of the embedded SRAM array. A first process control monitor (PCM) testline is included, which has a first layout corresponding to the mixed-signal CMOS circuitry. Additionally, a second PCM testline is included, which has a second layout corresponding to the embedded SRAM arrays. The first and second PCM testlines are formed in the scribe area.

Abstract: Pre-conditioning method and apparatus for mitigating erase-induced stress within flash memory devices are disclosed. The pre-condition method includes subjecting flash memory cell to a short write process to at least partially discharge the cells. The pre-condition process is applied to an entire sector at one time, and is performed immediately prior to erasing (charging) the cells within the sector.