Abstract: Isolation of active areas, e.g., transistors, in integrated circuits and the like so that functioning of one active area does not interfere with neighboring ones, is provided by the shallow trench isolation technique followed by chemical-mechanical polishing with a mixed abrasive slurry consisting essentially of (a) relatively large, hard inorganic metal oxide particles having (b) relatively small, soft inorganic metal oxide particles adsorbed on the surface thereof so as to modify the effective charge of the slurry to provide more favorable selectivity of silicon dioxide to silicon nitride, the slurry having a pH below about 5.

Abstract: A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.

Abstract: This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing articles and especially useful for chemical-mechanical planarization of semiconductor substrates and other microelectronic substrates.

Abstract: Isolation of active areas, e.g. transistors, in integrated circuits and the like so that functioning of one active area does not interfere with the neighboring ones, is provided by the shallow trench isolation technique followed by chemical-mechanical polishing with a mixed abrasive slurry consisting essentially of at least two inorganic metal oxide abrasive material particles at a pH below five, preferably on the order of 3.5 to 4.0, in order to control the polish rate selectivity of silicon dioxide to silicon nitride of the circuit and to reduce surface defects.

Abstract: The present invention relates to an aqueous slurry that is particularly useful for removing silicon dioxide in preference to silicon nitride by chemical-mechanical processing. The aqueous slurry according to the invention includes abrasive particles and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The present invention also relates to a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing. The method includes polishing the surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The abrasive particles can be dispersed in the aqueous medium or they can be bonded to the polishing pad.

Abstract: An abrasive slurry for chemical-mechanical polishing, e.g. to planarize metal and silicon wafers employed in the fabrication of microelectric devices and the like, the slurry consisting essentially only of a mixture of at least two inorganic metal oxides to provide superior performance in properties such as improved oxide and metal polish rates, controlled polish rate selectivity, low surface defectivity and enhanced slurry stability over that obtainable with a single inorganic metal oxide abrasive material.

Abstract: A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.

Abstract: The present invention relates to an aqueous slurry that is particularly useful for removing silicon dioxide in preference to silicon nitride by chemical-mechanical processing. The aqueous slurry according to the invention includes abrasive particles and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The present invention also relates to a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing. The method includes polishing the surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The abrasive particles can be dispersed in the aqueous medium or they can be bonded to the polishing pad.

Abstract: The present invention relates to an aqueous slurry that is particularly useful for removing silicon dioxide in preference to silicon nitride by chemical-mechanical processing. The aqueous slurry according to the invention includes abrasive particles and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The present invention also relates to a method of removing silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing. The method includes polishing the surface using a polishing pad, water, abrasive particles, and an organic compound having both a carboxylic acid functional group and a second functional group selected from amines and halides. The abrasive particles can be dispersed in the aqueous medium or they can be bonded to the polishing pad.

Abstract: A new slurry for shallow trench isolation (STI) processing in the chemical mechanical planarization (CMP) in microelectronic industry comprising an aqueous medium having an abrasive; and a compound which has a carboxylic group and an electrophilic functional group. The combination of ceria and/or titania with amino acids to obtain polishing selectivity's greater than 5:1. CMP is used for removing the excess oxide and planarizing the substrate and the trench. The silicon nitride acts as a stop layer, preventing the polishing of underlying silicon substrate.

Abstract: An electrophotographic apparatus with improved blue sensitivity comprises: a) a charging means; b) an exposure means, which includes light of a wavelength between 350 and 500 nanometers, and c) a photoconductive element comprising an electrically conductive base, two or more charge generation layers, at least one charge transport layer, and a protective layer comprising plasma-polymerized fluorocarbon, wherein the fluorine content of the protective layer is equal to or greater than 2.2 and less than 65 atomic percent. A method of making an image is also disclosed.

Abstract: A photoconductive element comprising an electrically conductive base; two or more charge generation layers; at least one charge transport layer; and a protective layer comprising diamond-like carbon, having fluorine between 0 and 65 atomic percent of the protective layer.

Abstract: A method of making a photoconductive element comprises the steps of: a) providing an electrically conductive base and depositing thereon, in any order, photoconductive layers comprising at least one charge transport layer and at least two charge generation layers; b) placing the layers formed in step a) in a reaction chamber with at least one feed gas selected from a hydrocarbon compound and a fluorocarbon compound in their gas phase; and c) decomposing the gas by plasma-enhanced chemical vapor deposition thereby forming on the photoconductive layers an outermost protective layer comprising diamond-like carbon having a fluorine content of between 0 and 65 atomic percent of the protective layer.

Abstract: A method is described for forming a corrosion resistant electrical component comprising exposing an electrical component to a first atmosphere containing silicon ions to coat the electrical component with a polysilicon film; and exposing the polysilicon coated component to a second atmosphere containing carbon ions generated from a gaseous mixture comprising a carbon source gas to encapsulate the polysilicon coated electrical component with a diamond-like carbon coating, the carbon source gas having a carbon to hydrogen atom ratio of between about 1:1 and 1:2.

Abstract: The present invention provides a fuser member having a substrate and an outermost layer of a fluorinated diamond like carbon wherein the fluorine content of the surface of said layer is between about 20 and 65 atomic percent based on the total amount of fluorine, carbon and oxygen in said surface. The fuser member is characterized in that the outermost layer provides for excellent release of the toner.

Abstract: A system for plasma etching predetermined portions of material on the major surfaces of a plurality of substrates. The system comprises a plurality of electrodes substantially parallel to each other and to substrates alternating therewith. Each of the electrodes is of a hollow configuration and includes a pair of flat sides, each side having a plurality of tapered apertures therein. A means for directing a reactive gas through the apertures toward the substrates is provided. A first bus structure electrically connects the substrates and may be grounded. A second bus structure electrically connects alternate ones of the electrodes and is connected to a first radio frequency power source. A third bus structure electrically connects the remaining ones of the electrodes and is connected to a second radio frequency power source adapted to operate 180 degrees out of phase with the first power source.

Abstract: A plasma etching process is disclosed wherein the substrate to be etched is first exposed to an etchant gas containing a volatile organohalide. When the etch rate is stabilized, the organohalide in the etchant gas is replaced by oxygen whereby the etch rate of the substrate is immediately increased to a substantially higher value. When the above is repeatedly done a substantially higher average etch rate is obtained.

Abstract: A system for plasma etching predetermined portions of material on the major surfaces of a plurality of substrates. The system comprises a plasma reactor chamber, provision for continuously introducing a gas to be converted in a reactive species by an electrical field, provision for forcing the gas through one or more through holes in the substrates, provision for continuously exhausting gas, an automatic transport or drive mechanism connected to the chamber and to the substrates to facilitate the advancement of substrates seriatim along a predetermined path in the chamber, and a vacuum lock connected to the chamber for maintaining a substantially constant atmosphere in the chamber while each of the substrates is inserted into and removed from the chamber.

Abstract: A dielectric surface is conditioned for electroless plating of a conductive metal thereon by exposing the substrate to a gaseous plasma obtained from ammonia and/or an organic amine. The conditioning can be in the holes and/or on the surfaces of the substrate.

Abstract: A method for improving the adhesion of a polymer such as an epoxy resin to an electrolytic copper surface wherein the copper surface to be adhered is exposed to gas plasma containing a fluorohydrocarbon.