Patents by Inventor Suryanarayana B. Tatapudi
Suryanarayana B. Tatapudi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11783869Abstract: Methods, systems, and devices are described for adjusting parameters of channel drivers based on temperature when a calibration component is unavailable. A memory device may determine whether a calibration component is available for use by the memory device. If not, the memory device may select an impedance setting for the driver that is based on an operating temperature of the memory device. A device or system may identify a temperature of a memory device, identify that a calibration component is unavailable to adjust a parameter of a driver of a data channel, select a value of the parameter based on the temperature and on identifying that the calibration component is unavailable, adjust the parameter of the driver of the data channel to the selected value, and transmit, by the driver operating using the selected value of the parameter, a signal over the channel.Type: GrantFiled: May 18, 2022Date of Patent: October 10, 2023Assignee: Micron Technology, Inc.Inventors: John David Porter, Suryanarayana B. Tatapudi
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Patent number: 11740795Abstract: Techniques for configurable link interfaces for a memory device are described. In some examples, memory devices may require periodic link training to support data transfer with a host device at relatively fast rates. However, in some managed memory applications, memory dies of a memory device may have integrated controllers that do not support such link training, and accordingly may not support some clock rates or data rates. To support data transfers between a host device and a memory device at relatively fast clock rates or data rates without link training, a memory die may be fabricated with a configurable link interface that can support different mappings between components and operation according to different clock rates or data rates. In some examples, a memory die may be fabricated in a manner that supports configurable mappings between an array and a data channel interface that are operable according to different multiplexing and serialization.Type: GrantFiled: April 14, 2022Date of Patent: August 29, 2023Assignee: Micron Technology, Inc.Inventors: Suryanarayana B. Tatapudi, John David Porter, Jaeil Kim, Mijo Kim
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Patent number: 11715508Abstract: Methods, systems, and devices for a source follower-based sensing architecture and sensing scheme are described. In one example, a memory device may include a sense circuit that includes two source followers that are coupled to each other and to a sense amplifier. A method of operating the memory device may include transferring a digit line voltage to one of the source followers and transferring a reference voltage to the other source follower. After transferring the digit line voltage and the reference voltage, the source followers may be enabled so that signals representative of the digit line voltage and the reference voltage are transferred from the outputs of the source followers to the sense amplifier for sensing.Type: GrantFiled: July 28, 2021Date of Patent: August 1, 2023Assignee: Micron Technology, Inc.Inventors: Hyun Yoo Lee, Suryanarayana B. Tatapudi, Huy T. Vo, Ferdinando Bedeschi, Umberto Di Vincenzo, Riccardo Muzzetto
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Patent number: 11699466Abstract: Embodiments relate to improving the biasing of active electronic components such as, for example, sense amplifiers. Embodiments include an adjustable bias signal generator that receives a reference signal as an input and generates a corresponding bias signal as an output. The adjustable bias signal generator may comprise a voltage driver and capacitor divider circuitry. In some embodiments, the capacitor divider circuitry is configurable by selecting specific capacitor dividers using a digital code. In other embodiments, the voltage driver is adjustable by applying different trim settings to tune the output of the voltage driver. The voltage driver may be temperature compensated by multiplexing different trim settings that correspond to different temperatures.Type: GrantFiled: December 8, 2021Date of Patent: July 11, 2023Assignee: Micron Technology, Inc.Inventors: John David Porter, Suryanarayana B. Tatapudi
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Patent number: 11594272Abstract: Devices and methods for sensing a memory cell are described. The memory cell may include a ferroelectric memory cell. During a read operation, a first switching component may selectively couple a sense component with the memory cell based on a logic state stored on the memory cell to transfer a charge between the memory cell and the sense component. A second switching component, which may be coupled with the first switching component, may down convert a voltage associated with the charge to another voltage that is within an operation voltage of the sense component. The sense component may operate at a lower voltage than a voltage at which the memory cell operates to reduce power consumption in some cases.Type: GrantFiled: August 23, 2021Date of Patent: February 28, 2023Assignee: Micron Technology, Inc.Inventors: Huy T. Vo, Adam S. El-Mansouri, Suryanarayana B. Tatapudi, John D. Porter
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Patent number: 11514969Abstract: Methods, systems, and devices for an arbitrated sense amplifier are described. A memory device may couple a memory cell to a first node via a digit line and may couple the first node to a second node. If a voltage at the second node is associated with a first logic value stored at the memory cell, the memory device may couple the second node with a third node and may charge the third node according to the voltage. However, if the voltage at the second node is associated with a second logic value stored at the memory cell, the memory device may not couple the second node with the third node. The memory device may compare the resulting voltage at the third node with a reference voltage and may generate a signal indicative of a logic value stored by the memory cell.Type: GrantFiled: July 21, 2021Date of Patent: November 29, 2022Assignee: Micron Technology, Inc.Inventors: Huy T. Vo, Ferdinando Bedeschi, Suryanarayana B. Tatapudi, Hyunyoo Lee, Adam S. El-Mansouri
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Patent number: 11494319Abstract: A memory device may support multiple DQ maps. Two or more of the DQ maps may support memory operations using a same input-output width. In some examples, one or more components for supporting a DQ map for a different input-output width may be used to also support one or more of the DQ maps for the same-input output width.Type: GrantFiled: August 17, 2021Date of Patent: November 8, 2022Assignee: Micron Technology, Inc.Inventors: Jaeil Kim, Suryanarayana B. Tatapudi
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Publication number: 20220351757Abstract: Methods, systems, and devices are described for adjusting parameters of channel drivers based on temperature when a calibration component is unavailable. A memory device may determine whether a calibration component is available for use by the memory device. If not, the memory device may select an impedance setting for the driver that is based on an operating temperature of the memory device. A device or system may identify a temperature of a memory device, identify that a calibration component is unavailable to adjust a parameter of a driver of a data channel, select a value of the parameter based on the temperature and on identifying that the calibration component is unavailable, adjust the parameter of the driver of the data channel to the selected value, and transmit, by the driver operating using the selected value of the parameter, a signal over the channel.Type: ApplicationFiled: May 18, 2022Publication date: November 3, 2022Inventors: John David Porter, Suryanarayana B. Tatapudi
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Publication number: 20220308757Abstract: Techniques for configurable link interfaces for a memory device are described. In some examples, memory devices may require periodic link training to support data transfer with a host device at relatively fast rates. However, in some managed memory applications, memory dies of a memory device may have integrated controllers that do not support such link training, and accordingly may not support some clock rates or data rates. To support data transfers between a host device and a memory device at relatively fast clock rates or data rates without link training, a memory die may be fabricated with a configurable link interface that can support different mappings between components and operation according to different clock rates or data rates. In some examples, a memory die may be fabricated in a manner that supports configurable mappings between an array and a data channel interface that are operable according to different multiplexing and serialization.Type: ApplicationFiled: April 14, 2022Publication date: September 29, 2022Inventors: Suryanarayana B. Tatapudi, John David Porter, Jaeil Kim, Mijo Kim
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Patent number: 11355165Abstract: Methods, systems, and devices are described for adjusting parameters of channel drivers based on temperature when a calibration component is unavailable. A memory device may determine whether a calibration component is available for use by the memory device. If not, the memory device may select an impedance setting for the driver that is based on an operating temperature of the memory device. A device or system may identify a temperature of a memory device, identify that a calibration component is unavailable to adjust a parameter of a driver of a data channel, select a value of the parameter based on the temperature and on identifying that the calibration component is unavailable, adjust the parameter of the driver of the data channel to the selected value, and transmit, by the driver operating using the selected value of the parameter, a signal over the channel.Type: GrantFiled: April 27, 2020Date of Patent: June 7, 2022Assignee: Micron Technology, Inc.Inventors: John David Porter, Suryanarayana B. Tatapudi
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Patent number: 11307771Abstract: Techniques for configurable link interfaces for a memory device are described. In some examples, memory devices may require periodic link training to support data transfer with a host device at relatively fast rates. However, in some managed memory applications, memory dies of a memory device may have integrated controllers that do not support such link training, and accordingly may not support some clock rates or data rates. To support data transfers between a host device and a memory device at relatively fast clock rates or data rates without link training, a memory die may be fabricated with a configurable link interface that can support different mappings between components and operation according to different clock rates or data rates. In some examples, a memory die may be fabricated in a manner that supports configurable mappings between an array and a data channel interface that are operable according to different multiplexing and serialization.Type: GrantFiled: July 10, 2020Date of Patent: April 19, 2022Assignee: Micron Technology, Inc.Inventors: Suryanarayana B. Tatapudi, John David Porter, Jaeil Kim, Mijo Kim
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Publication number: 20220101891Abstract: Embodiments relate to improving the biasing of active electronic components such as, for example, sense amplifiers. Embodiments include an adjustable bias signal generator that receives a reference signal as an input and generates a corresponding bias signal as an output. The adjustable bias signal generator may comprise a voltage driver and capacitor divider circuitry. In some embodiments, the capacitor divider circuitry is configurable by selecting specific capacitor dividers using a digital code. In other embodiments, the voltage driver is adjustable by applying different trim settings to tune the output of the voltage driver. The voltage driver may be temperature compensated by multiplexing different trim settings that correspond to different temperatures.Type: ApplicationFiled: December 8, 2021Publication date: March 31, 2022Inventors: John David Porter, Suryanarayana B. Tatapudi
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Publication number: 20220028433Abstract: Embodiments relate to improving the biasing of active electronic components such as, for example, sense amplifiers. Embodiments include an adjustable bias signal generator that receives a reference signal as an input and generates a corresponding bias signal as an output. The adjustable bias signal generator may comprise a voltage driver and capacitor divider circuitry. In some embodiments, the capacitor divider circuitry is configurable by selecting specific capacitor dividers using a digital code. In other embodiments, the voltage driver is adjustable by applying different trim settings to tune the output of the voltage driver. The voltage driver may be temperature compensated by multiplexing different trim settings that correspond to different temperatures.Type: ApplicationFiled: July 21, 2020Publication date: January 27, 2022Inventors: John David Porter, Suryanarayana B. Tatapudi
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Patent number: 11232819Abstract: Embodiments relate to improving the biasing of active electronic components such as, for example, sense amplifiers. Embodiments include an adjustable bias signal generator that receives a reference signal as an input and generates a corresponding bias signal as an output. The adjustable bias signal generator may comprise a voltage driver and capacitor divider circuitry. In some embodiments, the capacitor divider circuitry is configurable by selecting specific capacitor dividers using a digital code. In other embodiments, the voltage driver is adjustable by applying different trim settings to tune the output of the voltage driver. The voltage driver may be temperature compensated by multiplexing different trim settings that correspond to different temperatures.Type: GrantFiled: July 21, 2020Date of Patent: January 25, 2022Assignee: Micron Technology, Inc.Inventors: John David Porter, Suryanarayana B. Tatapudi
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Publication number: 20220020416Abstract: Methods, systems, and devices for a source follower-based sensing architecture and sensing scheme are described. In one example, a memory device may include a sense circuit that includes two source followers that are coupled to each other and to a sense amplifier. A method of operating the memory device may include transferring a digit line voltage to one of the source followers and transferring a reference voltage to the other source follower. After transferring the digit line voltage and the reference voltage, the source followers may be enabled so that signals representative of the digit line voltage and the reference voltage are transferred from the outputs of the source followers to the sense amplifier for sensing.Type: ApplicationFiled: July 28, 2021Publication date: January 20, 2022Inventors: Hyun Yoo Lee, Suryanarayana B. Tatapudi, Huy T. Vo, Ferdinando Bedeschi, Umberto Di Vincenzo, Riccardo Muzzetto
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Publication number: 20220020415Abstract: Methods, systems, and devices for an arbitrated sense amplifier are described. A memory device may couple a memory cell to a first node via a digit line and may couple the first node to a second node. If a voltage at the second node is associated with a first logic value stored at the memory cell, the memory device may couple the second node with a third node and may charge the third node according to the voltage. However, if the voltage at the second node is associated with a second logic value stored at the memory cell, the memory device may not couple the second node with the third node. The memory device may compare the resulting voltage at the third node with a reference voltage and may generate a signal indicative of a logic value stored by the memory cell.Type: ApplicationFiled: July 21, 2021Publication date: January 20, 2022Inventors: Huy T. Vo, Ferdinando Bedeschi, Suryanarayana B. Tatapudi, Hyunyoo Lee, Adam S. El-Mansouri
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Publication number: 20220011934Abstract: Techniques for configurable link interfaces for a memory device are described. In some examples, memory devices may require periodic link training to support data transfer with a host device at relatively fast rates. However, in some managed memory applications, memory dies of a memory device may have integrated controllers that do not support such link training, and accordingly may not support some clock rates or data rates. To support data transfers between a host device and a memory device at relatively fast clock rates or data rates without link training, a memory die may be fabricated with a configurable link interface that can support different mappings between components and operation according to different clock rates or data rates. In some examples, a memory die may be fabricated in a manner that supports configurable mappings between an array and a data channel interface that are operable according to different multiplexing and serialization.Type: ApplicationFiled: July 10, 2020Publication date: January 13, 2022Inventors: Suryanarayana B. Tatapudi, John David Porter, Jaeil Kim, Mijo Kim
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Publication number: 20210383856Abstract: Devices and methods for sensing a memory cell are described. The memory cell may include a ferroelectric memory cell. During a read operation, a first switching component may selectively couple a sense component with the memory cell based on a logic state stored on the memory cell to transfer a charge between the memory cell and the sense component. A second switching component, which may be coupled with the first switching component, may down convert a voltage associated with the charge to another voltage that is within an operation voltage of the sense component. The sense component may operate at a lower voltage than a voltage at which the memory cell operates to reduce power consumption in some cases.Type: ApplicationFiled: August 23, 2021Publication date: December 9, 2021Inventors: Huy T. Vo, Adam S. El-Mansouri, Suryanarayana B. Tatapudi, John D. Porter
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Publication number: 20210335396Abstract: Methods, systems, and devices are described for adjusting parameters of channel drivers based on temperature when a calibration component is unavailable. A memory device may determine whether a calibration component is available for use by the memory device. If not, the memory device may select an impedance setting for the driver that is based on an operating temperature of the memory device. A device or system may identify a temperature of a memory device, identify that a calibration component is unavailable to adjust a parameter of a driver of a data channel, select a value of the parameter based on the temperature and on identifying that the calibration component is unavailable, adjust the parameter of the driver of the data channel to the selected value, and transmit, by the driver operating using the selected value of the parameter, a signal over the channel.Type: ApplicationFiled: April 27, 2020Publication date: October 28, 2021Inventors: John David Porter, Suryanarayana B. Tatapudi
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Patent number: 11127449Abstract: Devices and methods for sensing a memory cell are described. The memory cell may include a ferroelectric memory cell. During a read operation, a first switching component may selectively couple a sense component with the memory cell based on a logic state stored on the memory cell to transfer a charge between the memory cell and the sense component. A second switching component, which may be coupled with the first switching component, may down convert a voltage associated with the charge to another voltage that is within an operation voltage of the sense component. The sense component may operate at a lower voltage than a voltage at which the memory cell operates to reduce power consumption in some cases.Type: GrantFiled: April 25, 2018Date of Patent: September 21, 2021Assignee: Micron Technology, Inc.Inventors: Huy T. Vo, Adam S. El-Mansouri, Suryanarayana B. Tatapudi, John D. Porter