Patents by Inventor Suryanarayanan Iyer

Suryanarayanan Iyer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber
    Patent number: 6884464
    Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.
    Type: Grant
    Filed: November 4, 2002
    Date of Patent: April 26, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Lee Luo, R. Suryanarayanan Iyer, Janardhanan Anand Subramony, Errol Antonio C. Sanchez, Xiaoliang Jin, Aihua Chen, Chang-Lian Yan, Nobuo Tokai, Yuji Maeda, Randhir P. Singh Thakur
  • Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber
    Publication number: 20040086640
    Abstract: A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.
    Type: Application
    Filed: November 4, 2002
    Publication date: May 6, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Lee Luo, R. Suryanarayanan Iyer, Janardhanan Anand Subramony, Errol Antonio C. Sanchez, Xiaoliang Jin, Aihua Steven Chen, Chang-Lian Yan, Nobuo Tokai, Yuji Maeda, Randhir P. Singh Thakur
  • Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
    Patent number: 6713127
    Abstract: An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in the deposition chamber using a thermal energy source. A silicon oxide (or an oxynitride) film is formed above the substrate wherein total pressure for the deposition chamber is maintained in the range of 50 Torr to 350 Torr and wherein a flow ratio for the silicon source gas (or the silicon source gas with the nitridiation source gas) and the oxidation source gas is in the range of 1:50 to 1:10000 during a deposition process.
    Type: Grant
    Filed: December 28, 2001
    Date of Patent: March 30, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Janardhanan Anand Subramony, Yoshitaka Yokota, Ramaseshan Suryanarayanan Iyer, Lee Luo, Aihua Chen
  • Methods for silicon oxide and oxynitride deposition using single wafer low pressure CVD
    Publication number: 20030138562
    Abstract: An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in the deposition chamber using a thermal energy source. A silicon oxide (or an oxynitride) film is formed above the substrate wherein total pressure for the deposition chamber is maintained in the range of 50 Torr to 350 Torr and wherein a flow ratio for the silicon source gas (or the silicon source gas with the nitridiation source gas) and the oxidation source gas is in the range of 1:50 to 1:10000 during a deposition process.
    Type: Application
    Filed: December 28, 2001
    Publication date: July 24, 2003
    Inventors: Janardhanan Anand Subramony, Yoshitaka Yokota, Ramaseshan Suryanarayanan Iyer, Lee Luo, Aihua Chen
  • Method and apparatus for forming silicon containing films
    Publication number: 20030124818
    Abstract: The present invention describes a method and apparatus for forming a uniform silicon containing film in a single wafer reactor. According to the present invention, a silicon containing film is deposited in a resistively heated single wafer chamber utilizing a process gas having a silicon source gas and which provides an activation energy less than 0.5 eV at a temperature between 750° C.-550° C.
    Type: Application
    Filed: December 28, 2001
    Publication date: July 3, 2003
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Lee Luo, Ramaseshan Suryanarayanan Iyer, Shulin Wang, Aihau Chen, Paul Meissner
  • Cycling deposition of low temperature films in a cold wall single wafer process chamber
    Publication number: 20030059535
    Abstract: A method for film deposition that includes, flowing a first reactive gas over a top surface of a wafer in a cold wall single wafer process chamber to form a first half-layer of the film on the wafer, stopping the flow of the first reactive gas, removing residual first reactive gas from the cold wall single wafer process chamber, flowing a second reactive gas over the first half-layer to form a second half-layer of the film where deposition of the second half-layer is non self-limiting, controlling a thickness of the second half-layer by regulating process parameters within the cold wall single wafer process chamber, stopping the flow of the second reactive gas; and removing residual second reactive gas from the cold wall single wafer process chamber.
    Type: Application
    Filed: September 25, 2001
    Publication date: March 27, 2003
    Inventors: Lee Luo, Sang Hoon Ahn, Aihua Chen, Ramaseshan Suryanarayanan Iyer, Shulin Wang, Randhir P. Singh Thakur