Patents by Inventor Susai Lawrence Selvaraj

Susai Lawrence Selvaraj has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same
    Publication number: 20150255547
    Abstract: Structures for III-nitride GaN high electron mobility transistors (HEMT), method for fabricating for GaN devices and integrated chip-level power systems using the GaN devices are provided. The GaN HEMT structure includes a substrate, an AlGaN/GaN heterostructure grown on the substrate, and a normally-off GaN device fabricated on the AlGaN/GaN heterostructure. The AlGaN/GaN heterostructure includes a GaN buffer layer and an AlGaN barrier layer. The integrated chip-level power system includes a substrate, an AlGaN/GaN heterostructure layer grown on the substrate and a plurality of GaN devices. The AlGaN/GaN heterostructure layer includes a GaN buffer layer and an AlGaN barrier layer and is formed into mesa areas and valley areas. Each of the plurality of GaN devices are fabricated on a separate one of the mesa areas.
    Type: Application
    Filed: March 28, 2013
    Publication date: September 10, 2015
    Applicant: Agency for Science, Technology and Research
    Inventors: Li Yuan, Patrick Guo Qiang Lo, Haifeng Sun, Kean Boon Lee, Weizhu Wang, Susai Lawrence Selvaraj