Abstract: Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.

Abstract: Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.

Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.

Abstract: Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.

Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.

Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.

Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.

Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.

Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.

Abstract: Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrat e material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.

Abstract: Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.

Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.

Abstract: An electronic component is provided on a substrate. A thin-film capacitor is attached to the substrate, the thin-film capacitor includes a pyrochlore or perovskite dielectric layer between a plurality of electrode layers, the electrode layers being formed from a conductive thin-film material. A reactive barrier layer is deposited over the thin-film capacitor. The reactive barrier layer includes an oxide having an element with more than one valence state, wherein the element with more than one valence state has a molar ratio of the molar amount of the element that is in its highest valence state to its total molar amount in the barrier of 50% to 100%. Optionally layers of other materials may intervene between the capacitor and reactive barrier layer. The reactive barrier layer may be paraelectric and the electronic component may be a tunable capacitor.

Abstract: Systems and methods are provided for fabricating a thin film capacitor involving depositing an electrode layer of conductive material on top of a substrate material, depositing a first layer of ferroelectric material on top of the substrate material using a metal organic deposition or chemical solution deposition process, depositing a second layer of ferroelectric material on top of the first layer using a high temperature sputter process and depositing a metal interconnect layer to provide electric connections to layers of the capacitor.

Abstract: A thin-film capacitor structure fabricated on a substrate is provided. The thin-film capacitor includes a pyrochlore or perovskite alkali earth dielectric layer between a plurality of electrode layers. A pyrochlore or perovskite hydrogen-gettering barrier layer is deposited over the thin-film capacitor. A hermetic seal layer is deposited over the barrier layer by plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), or some other hydrogen-producing method. The hydrogen-gettering barrier layer prevents hydrogen from reacting with and degrading the properties of the dielectric material, thereby enhancing the durability and other features of the capacitor.

Abstract: A memory storage device has a file storage operating system which uses an inode to record and find segments of each data file. The inode includes a plurality of rows. A portion of the rows are written with direct extents pointing to data blocks storing portions of file segments. At least two of the extents point to data blocks having addresses in different logical volumes.

Abstract: A memory storage device has a file storage operating system that uses inodes to access file segments. Each inode has a plurality of rows. A portion of the rows can store extents pointing, directly or indirectly, to data blocks. Each extent has a field to indicate whether the extent is an indirect extent or a direct extent.

Abstract: A memory storage device has a file storage operating system that uses inodes to access file segments. Each inode has a plurality of rows. A portion of the rows can store extents pointing, directly or indirectly, to data blocks. Each extent has a field to indicate whether the extent is an indirect extent or a direct extent.

Abstract: A memory storage device has a file storage operating system which uses an inode to record and find segments of each data file. The inode includes a plurality of rows. A portion of the rows are written with direct extents pointing to data blocks storing portions of file segments. At least two of the extents point to data blocks having addresses in different logical volumes.

Abstract: A memory storage device has a file storage operating system which uses an inode to record and find segments of each data file. The inode includes a plurality of rows. A portion of the rows are written with direct extents pointing to data blocks storing portions of file segments. At least two of the extents point to data blocks having addresses in different logical volumes.