Abstract: Methods for producing PVD sputtering targets comprising extended sidewalls are described that include: a) bonding a surface material to a core material to produce a rough part; b) forming the rough part; and in some embodiments, c) utilizing at least one machining step to form the target. In addition, methods for producing PVD sputtering targets comprising extended sidewalls are described herein that include: a) concurrently bonding a surface material to a core material to produce a rough part and forming the rough part; and in some embodiments, b) utilizing at least one machining step to form the target. PVD sputtering targets and related apparatus formed by and utilizing these methods are also described herein.

Abstract: The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.

Abstract: The invention includes a copper-comprising sputtering target. The target is monolithic or bonded and contains at least 99.99% copper by weight and has an average grain size of from 1 micron to 50 microns. The copper-comprising target has a yield strength of greater than or equal to about 15 ksi and a Brinell hardness (HB) of greater than about 40. The invention includes copper alloy monolithic and bonded sputtering targets consisting essentially of less than or equal to about 99.99% copper by weight and a total amount of alloying element(s) of at least 100 ppm and less than 10% by weight. The targets have an average grain size of from less than 1 micron to 50 microns and have a grain size non-uniformity of less than about 15% standard deviation (1-sigma) throughout the target. The invention additionally includes methods of producing bonded and monolithic copper and copper alloy targets.

Abstract: The invention includes a method of forming a heat treated sputtering target assembly. A backing plate is diffusion bonded to a sputtering target to produce a sputtering target assembly. The sputtering target assembly is heat treated to precipitation harden the backing plate of the assembly. The heat treatment includes heating and quenching, with the quenching being performed by immersing the backing plate in a quenchant without submerging the sputtering target.

Abstract: Described is a method for producing a diffusion bonded sputtering target assembly which is thermally treated to precipitation harden the backing plate without compromising the diffusion bond integrity. The method includes heat treating and quenching to alloy solution and artificially age the backing plate material after diffusion bonding to a target. Thermal treatment of the diffusion bonded sputtering target assembly includes quenching by partial-immersion in a quenchant and is performed after diffusion bonding and allows for various tempers in the backing plate.

Abstract: Described is a method of making a heat treated sputtering target and a sputtering target assembly with a prescripitation hardened backing plate diffusion hardened to a sputtering target.

Abstract: Described is a method for producing a diffusion bonded sputtering target assembly which is thermally treated to precipitation harden the backing plate without compromising the diffusion bond integrity. The method includes heat treating and quenching to alloy solution and artificially age the backing plate material after diffusion bonding to a target. Thermal treatment of the diffusion bonded sputtering target assembly includes quenching by partial-immersion in a quenchant and is performed after diffusion bonding and allows for various tempers in the backing plate.

Abstract: Described is a method for producing a diffusion bonded sputtering assembly which is thermally treated to precipitation harden the backing plate without compromising the diffusion bond integrity. The method includes heat treating and quenching to alloy solution and artificially age the backing plate material after diffusion bonding to a target. Thermal treatment of the diffusion bonded sputtering target assembly includes quenching by partial-immersion in a quenchant and is performed after diffusion bonding and allows for various tempers in the backing plate.

Abstract: Described is a method of manufacturing a sputtering target assembly is that minimizes distortion during manufacture and a novel target assembly so produced. The method involves positioning a backing member in an external shoulder formed in the target member, electron beam welding mating surfaces and machining the interior surface of the welded assembly to provide a coextensive surface along the inner surfaces of the target and backing members. The resulting target assembly can withstand high water pressure and high sputter power levels.