Abstract: A single-transistor random access memory (RAM) cell may be used as universal memory. The single-transistor RAM cell generally includes a first gate, a 2D-crystal channel, a source, a drain, an ion conductor, and a second (back) gate. The single-transistor RAM cell is capable of drifting ions towards the graphene channel. The ions in turn induce charge carriers from the source into the graphene channel. The closer the ions are to the graphene channel, the higher the conductivity of the graphene channel. As the ions are spaced from the graphene channel, the conductivity of the graphene channel is reduced. Thus the presence of the charged ions adjacent to the channel is used to modify the channel's conductivity, which is sensed to indicate the state of the memory.

Abstract: The present invention comprises a new and improved exercise device that is specifically adapted to assist a user engaged in abdominal crunches. The device comprises an elongated, arcuate board having a pair of handle grips extending from the sides thereof. Users engage the handles of the device and place their hands alongside their head during the crunch exercise. This is accomplished without placing strain on the neck. Rather than placing a tugging load on the back of the user's head, the board distributes this load across the back of the head, neck, and upper back of the user, thereby avoiding neck flexion. Overall, the device supports both the head and upper back, and eliminates neck pain when performing an abdominal crunch. The device includes adjustable side handles to ensure hands are properly placed, and stabilizes the head and neck while a person performs abdominal exercises. The device improves form during the exercise and improves core performance.

Abstract: A single-transistor random access memory (RAM) cell may be used as universal memory. The single-transistor RAM cell generally includes a first gate, a 2D-crystal channel, a source, a drain, an ion conductor, and a second (back) gate. The single-transistor RAM cell is capable of drifting ions towards the graphene channel. The ions in turn induce charge carriers from the source into the graphene channel. The closer the ions are to the graphene channel, the higher the conductivity of the graphene channel. As the ions are spaced from the graphene channel, the conductivity of the graphene channel is reduced. Thus the presence of the charged ions adjacent to the channel is used to modify the channel's conductivity, which is sensed to indicate the state of the memory.