Patents by Inventor Susan G. Kim

Susan G. Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device
    Patent number: 6319775
    Abstract: A process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device includes the formation of a nitrogenated top oxide layer. The process includes the sequential formation of a silicon nitride layer and a top oxide layer using an in-situ LPCVD or RTCVD deposition process in which the silicon nitride layer is not exposed to ambient atmosphere prior to the formation of the top oxide layer. After forming the top oxide layer, an annealing process is carried out to diffuse nitrogen into the top oxide layer. The formation of a nitrogenated top oxide layer provides an improved two-bit EEPROM memory device by reducing charge leakage in the ONO floating-gate electrode.
    Type: Grant
    Filed: October 25, 1999
    Date of Patent: November 20, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Arvind Halliyal, Robert B. Ogle, Susan G. Kim, Kenneth Au