Patents by Inventor Susan Gee-Young Kim

Susan Gee-Young Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a low-k dielectric structure on a substrate
    Patent number: 6967158
    Abstract: The present invention provides a method for forming a low-k dielectric structure on a substrate 10 that includes depositing, upon the substrate, a dielectric layer 12. A multi-film cap layer 18 is deposited upon the dielectric layer. The multi-film cap layer includes first 181 and second 182 films, with the second film being disposed between the dielectric layer and the first film. The first film typically has a removal rate associated therewith that is less than the removal rate associated with the second film. A deposition layer 20 is deposited upon the multi-film cap layer and subsequently removed. The properties of the multi-film cap layer are selected so as to prevent the dielectric layer from being exposed/removed during removal of the deposition film. In this manner, a deposition layer, having variable rates of removal, such as copper, may be planarized without damaging the underlying dielectric layer.
    Type: Grant
    Filed: March 7, 2003
    Date of Patent: November 22, 2005
    Assignees: Freescale Semiconductor, Inc., Advanced Micro Devices, Inc.
    Inventors: Yuri Solomentsev, Matthew S. Angyal, Errol Todd Ryan, Susan Gee-Young Kim
  • Method for forming a low-k dielectric structure on a substrate
    Publication number: 20040175922
    Abstract: The present invention provides a method for forming a low-k dielectric structure on a substrate 10 that includes depositing, upon the substrate, a dielectric layer 12. A multi-film cap layer 18 is deposited upon the dielectric layer. The multi-film cap layer includes first 181 and second 182 films, with the second film being disposed between the dielectric layer and the first film. The first film typically has a removal rate associated therewith that is less than the removal rate associated with the second film. A deposition layer 20 is deposited upon the multi-film cap layer and subsequently removed. The properties of the multi-film cap layer are selected so as to prevent the dielectric layer from being exposed/removed during removal of the deposition film. In this manner, a deposition layer, having variable rates of removal, such as copper, may be planarized without damaging the underlying dielectric layer.
    Type: Application
    Filed: March 7, 2003
    Publication date: September 9, 2004
    Applicants: MOTOROLA, INC., Advanced Micro Devices, Inc.
    Inventors: Yuri Solomentsev, Matthew S. Angyal, Errol Todd Ryan, Susan Gee-Young Kim