Abstract: Provided herein are antibodies, or antigen binding portions thereof, that bind to glucocorticoid-inducible TNF receptor (GITR). Also provided are uses of these proteins in therapeutic applications, such as in the treatment of cancer. Further provided are cells that produce the antibodies, polynucleotides encoding the heavy and/or light chain variable region of the antibodies, and vectors comprising the polynucleotides encoding the heavy and/or light chain variable region of the antibodies.

Abstract: Compounds, tautomers and pharmaceutically acceptable salts of the compounds are disclosed, wherein the compounds have the structure of Formula Ia, as defined in the specification. In an embodiment, a pharmaceutical composition can be in a liquid dosage form and can comprise a therapeutically effective amount of the compound or a pharmaceutically acceptable salt thereof as an adjuvant and a therapeutic agent. In another embodiment, a method of adjuvant treating a disorder or condition can comprising administering the pharmaceutical composition to a patient.

Abstract: Compounds, tautomers and pharmaceutically acceptable salts of the compounds are disclosed, wherein the compounds have the structure of Formula Ia, as defined in the specification. Corresponding pharmaceutical compositions, methods of treatment, methods of synthesis, and intermediates are also disclosed.

Abstract: A network device of a core network may maintain a mapping table that maps core network slices with quality of service (QoS) class identifiers (QCIs) based on service profile identifiers (SPIDs), and may receive, from a user device, a request for service with a particular QCI included in the QCIs of the mapping table. The network device may identify a particular SPID of the SPIDs in the mapping table based on the particular QCI of the service, and may generate a flow request based on the particular SPID. The network device may cause the flow request to be provided to a radio access network (RAN) associated with the user device, to cause the RAN to select a RAN slice for provision of the service to the user device.

Abstract: Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.

Abstract: Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.

Abstract: Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.

Abstract: A coreless organic substrate in which a mounting hole is formed near each corner of the substrate and is used during assembly processes to secure the substrate so as to prevent flexing.

Abstract: Photovoltaic devices are formed with electroplated metal grids that are effectively adhered to the devices. Metal-rich silicides, such as nickel silicides, are formed on the devices by annealing. The metal used in the anneal exhibits low stress. Annealing may be conducted in ambient air followed by removal of oxide and excess metal from the metal-rich silicide. Laser patterning of the antireflective coating of the devices can be used to expose the emitter to form front grid contacts. Doping of the emitter in the patterned region can be increased during laser patterning. The ratio of the centerline to centerline pitch per laser width is controlled to ensure sufficient adhesion of subsequently plated busbars.

Abstract: Photovoltaic devices are formed by laser drilling vias through silicon substrates and, following surface preparation of the via sidewalls, plating a continuous, electrically conductive layer on the via sidewalls to electrically connect the emitter side of the cell with the back side of the cell. The electrically conductive layer can be formed on portions of a base emitter within the vias and on the back side of the substrate. Alternatively, the electrically conductive layer can be formed on a passivation layer on the via sidewalls and back side of the cell.

Abstract: An apparatus may be provided. The apparatus may comprise a core and a covering material disposed on a portion of the core. At least one opening may be disposed in the core. The at least one opening may expose at least one interior surface on the core. The at least one interior surface may be devoid of the covering material.

Abstract: A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.

Abstract: A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.

Abstract: A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.

Abstract: A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.

Abstract: A bicycle seat includes a substantially horizontally extending seat portion and a monolithic metallic rail is connected to an underside of the seat portion so as to be connected with the guide on the top end of the seat post. The monolithic rail includes a connection portion, a rear portion and a front portion. The rear portion includes two extension rods which are connected to the rear end of the seat portion. The front portion is connected to the front end of the seat portion. The connection portion is longitudinally and adjustably attachable to the guide on the seat post of a bicycle. The rail can be used in place of the international parallel rail system and thus convert said bicycle seat from the international parallel rail system to the I-beam system.

Abstract: A transducer apparatus is disclosed having a spool member with a body portion and first and second elevated regions formed on the body portion. A PVDF film surrounds the spool member, the film including an inner surface facing the spool member and an outer surface opposite the inner surface. The film as surrounding the spool member has a predetermined frequency of resonance. Lateral ends of the film are secured together by a securing material. The securing material is such that the secured ends of the film will have substantially the same resonance frequency as a remainder of the film. The film includes a non-electrode area at a perimeter of the inner surface and an electrode material formed on a remainder of the inner surface. Upon securing the lateral edges of the film together, the securement is at overlapping non-electrode lateral edges of the film. The securing material may be any one of an adhesive in combination with screws or thermally deformable nails, adhesive alone, tape, or ultrasonic welding.

Abstract: A transducer apparatus is disclosed including a spool member having a body portion and first and second elevated regions formed on the body portion. A piezoelectric film such as a PVDF film surrounds the spool member and is spaced apart from the body portion of the spool member by an elevation of the elevated region, thereby forming a predetermined gap between the piezoelectric film and the body portion of the spool member. The predetermined gap is at least 0.1 mm and enables a predetermined resonance frequency in the piezoelectric film to control the resonance frequency of the transducer. Opposite lateral ends of the piezoelectric film are secured together such that secured ends of the piezoelectric film have substantially the same resonance frequency as a remainder of the piezoelectric film.