Patents by Inventor Susan L. Draper

Susan L. Draper has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Precipitation hardenable high temperature shape memory alloy
    Patent number: 7749341
    Abstract: A composition of the invention is a high temperature shape memory alloy having high work output, and is made from (Ni+Pt+Y)xTi(100-x), wherein x is present in a total amount of 49-55 atomic %, Pt is present in a total amount of 10-30 atomic %, Y is one or more of Au, Pd, and Cu and is present in a total amount of 0 to 10 atomic %. The alloy has a matrix phase wherein the total concentration of Ni, Pt, and the one or more of Pd, Au, and Cu is greater than 50 atomic %.
    Type: Grant
    Filed: March 6, 2006
    Date of Patent: July 6, 2010
    Assignee: The United States of America as represented by the Administrator of National Aeronautics and Space Administration
    Inventors: Ronald Dean Noebe, Susan L. Draper, Michael V. Nathal, Edwin A. Crombie
  • High work output NI-TI-PT high temperature shape memory alloys and associated processing methods
    Patent number: 7501032
    Abstract: According to the invention, compositions of Ni—Ti—Pt high temperature, high force, shape memory alloys are disclosed that have transition temperatures above 100° C.; have narrow hysteresis; and produce a high specific work output.
    Type: Grant
    Filed: February 28, 2006
    Date of Patent: March 10, 2009
    Assignee: The United States of America as represented by the Administration of NASA
    Inventors: Ronald D. Noebe, Susan L. Draper, Michael V. Nathal, Anita Garg
  • Annealing Group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency
    Patent number: 4849033
    Abstract: The thermoelectric conversion efficiency of a GaP dope SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200.degree. C. to 1275.degree. C. in air to form large grains having a size over 50 .mu.m and to form a Ge-Ga-P rich phase and a silicon rich phase containing SiP and SiO.sub.2 particles.
    Type: Grant
    Filed: April 21, 1988
    Date of Patent: July 18, 1989
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Jan W. Vander Sande, Charles Wood, Susan L. Draper