Abstract: In microelectronics manufacturing, an arrangement for monitoring and control of exposure of an undeveloped photosensitive layer on a structure susceptible to variations in optical properties in order to attain the desired critical dimension for the pattern to be developed in the photosensitive layer.

Abstract: For critical dimension (CD) metrology of photomasks, a laser scatterometer linewidth measurement tool provides noncontact rapid, and nondestructive measurement of linewidth. Calculation of the linewidth is based on a rigorous theoretical model, thus eliminating the need for calibrations. A chrome-on-glass diffraction grating is illuminated with a laser. A photodetector mounted behind the photomask measures the scattered power in each diffracted order. This provides data for the rigorous theoretical model which provides a relationship between the linewidth of the photomask grating and the fraction of total power diffracted into the transmitted zero-order. This scatterometer linewidth measurement technique provides a simple, rapid, nondestructive, and noncontact method of linewidth determination which takes into account the effect of the glass substrate on which the grating is placed.