Abstract: The present invention provides a method of manufacturing a capacitor on a semiconductor wafer. The method comprises placing a metal nitride film, such as a tantalum nitride film, on a substrate of a semiconductor wafer. A first electrode and a dielectric layer are created from the metal nitride film by subjecting the metal nitride film to a plasma oxidation process, which forms a blended interface between the first electrode and the dielectric layer. To complete the capacitor, a second electrode is formed over the dielectric. Interconnections with other semiconductor devices may also be formed on the wafer to create an operative integrated circuit.

Abstract: A method for forming a dielectric film having a desired composition comprising sputtering a dielectric material onto a substrate to produce an intermediary film, the intermediary film incorporating one or more elements in addition to those elements included in the desired composition of the dielectric film; and removing the one or more additional elements from the intermediary film to produce the dielectric film having the desired composition.

Abstract: A lead-acid battery according to the invention contains an electrode grid structure that comprises dispersoid-containing lead having relatively high strength and good corrosion resistance. The dispersoid particles exemplarily are selected from the oxides, nitrides and carbides that are substantially insoluble in lead and in sulfuric acid of concentration suitable for use in a lead-acid battery. Significantly, the dispersoid-containing lead has average grain size of at least 20 .mu.m. In consequence of the relatively large grain size, the total length of grain boundaries exposed to electrolyte is relatively small, and corrosion resistance is improved. Exemplary techniques for forming the dispersoid-containing lead are disclosed.