Patents by Inventor Susan S. Dottarar

Susan S. Dottarar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-aligned internal mobile ion getter for multi-layer metallization on integrated circuits
    Patent number: 4732865
    Abstract: A multi-layer metallization method and structure that permits the use of sodium-ion contaminated titanium-tungsten (Ti:W) as a barrier metal with gold conductor metal on a silicon substrate, without significant degradation of device characteristics. After depositing the barrier and conductor metal layers, a layer of phosphorous-silicate glass (PSG) is anisotropically-etched to expose the field oxide and top surface of the conductor metal but leave PSG layer on each sidewall of the metallization structure. The circuit is then annealed at 400.degree. C. for 30 minutes. Then, an adhesion layer (Si.sub.3 N.sub.4) and an insulative layer (SiO.sub.2) are deposited over the metallization structure and field oxide, with the adhesion layer in contact with the top surface of the conductor metal and the gettering composition.
    Type: Grant
    Filed: October 3, 1986
    Date of Patent: March 22, 1988
    Assignee: Tektronix, Inc.
    Inventors: David R. Evans, James S. Flores, Susan S. Dottarar