Patents by Inventor Susan Trolier-McKinstry
Susan Trolier-McKinstry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11910718Abstract: A piezoelectric thin film element having a first electrode, a second electrode and a piezoelectric thin film between the electrodes, wherein the thin film comprises a laminate having two or more piezoelectric thin film layers and wherein a first thin film layer is doped by one or more dopants and a second film layer is doped by one or more dopants and wherein at least one dopant of the second thin film layer is different from the dopant or dopants of the first thin film layer.Type: GrantFiled: September 8, 2020Date of Patent: February 20, 2024Assignee: Xaar Technology LimitedInventors: Peter Mardilovich, Susan Trolier-McKinstry
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Patent number: 11849590Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.Type: GrantFiled: September 20, 2021Date of Patent: December 19, 2023Assignee: Texas Instruments IncorporatedInventors: Carl Sebastian Morandi, Susan Trolier-McKinstry, Kezhakkedath Ramunni Udayakumar, John Anthony Rodriguez, Bhaskar Srinivasan
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Patent number: 11335845Abstract: Methods for making metastable lead-free piezoelectric materials are presented herein.Type: GrantFiled: January 23, 2019Date of Patent: May 17, 2022Assignees: Alliance for Sustainable Energy, LLC, The Regents of the University of California, The Penn State Research FoundationInventors: Lauren Marie Garten, David Samuel Ginley, Kristin Aslaug Ceder-Persson, Shyam Sundar Dwaraknath, Susan Trolier-McKinstry
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Publication number: 20220005814Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.Type: ApplicationFiled: September 20, 2021Publication date: January 6, 2022Inventors: Carl Sebastian MORANDI, Susan TROLIER-McKINSTRY, Kezhakkedath Ramunni UDAYAKUMAR, John Anthony RODRIGUEZ, Bhaskar SRINIVASAN
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Patent number: 11158642Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.Type: GrantFiled: February 9, 2018Date of Patent: October 26, 2021Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Carl Sebastian Morandi, Susan Trolier-McKinstry, Kezhakkedath Ramunni Udayakumar, John Anthony Rodriguez, Bhaskar Srinivasan
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Publication number: 20210126187Abstract: The present invention relates to an electrical element comprising a multilayer thin film ceramic member which is a dielectric exhibiting piezoelectric/electrostrictive properties which make it suitable for use in microelectromechanical systems.Type: ApplicationFiled: November 5, 2020Publication date: April 29, 2021Applicant: XAAR TECHNOLOGY LIMITEDInventors: Peter MARDILOVICH, Song Won KO, Susan TROLIER-MCKINSTRY, Charalampos FRAGKIADAKIS, Wanlin ZHU
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Publication number: 20210036215Abstract: A method of poling piezoelectric elements of an actuator comprises applying an electric pulse heating waveform to the piezoelectric element(s) in order to increase the temperature thereof to a poling temperature (S202), applying an electric field poling waveform to the piezoelectric element(s) for a poling time period (S203), and apply an electric field holding poling waveform to the piezoelectric element(s) to maintain poling whilst the temperature of the actuator decreases (S204).Type: ApplicationFiled: January 31, 2019Publication date: February 4, 2021Applicant: XAAR TECHNOLOGY LIMITEDInventors: Charalampos FRAGKIADAKIS, Peter MARDILOVICH, Susan TROLIER-MCKINSTRY
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Publication number: 20210013394Abstract: A piezoelectric thin film element having a first electrode, a second electrode and a piezoelectric thin film between the electrodes, wherein the thin film comprises a laminate having two or more piezoelectric thin film layers and wherein a first thin film layer is doped by one or more dopants and a second film layer is doped by one or more dopants and wherein at least one dopant of the second thin film layer is different from the dopant or dopants of the first thin film layer.Type: ApplicationFiled: September 8, 2020Publication date: January 14, 2021Applicant: XAAR TECHNOLOGY LIMITEDInventors: Peter MARDILOVICH, Susan TROLIER-MCKINSTRY
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Patent number: 10541360Abstract: A piezoelectric thin film element comprising a first electrode, a second electrode and one or more piezoelectric thin films there between wherein the first electrode is a platinum metal electrode having an average grain size greater than 50 nm and wherein a piezoelectric thin film adjacent the platinum metal electrode comprises a laminate having a plurality of piezoelectric thin film layers wherein a piezoelectric thin film layer contacting the platinum metal electrode comprises lead zirconate titanate (PZT) of composition at or about PbZrxTi1-xO3 where 0<x?0.60 and has a degree of pseudo cubic {100} orientation greater than or equal to 90%.Type: GrantFiled: March 14, 2017Date of Patent: January 21, 2020Assignee: Xaar Technology LimitedInventors: Peter Mardilovich, Song-Won Ko, Susan Trolier-McKinstry, Trent Borman
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Publication number: 20190229258Abstract: Methods for making metastable lead-free piezoelectric materials are presented herein.Type: ApplicationFiled: January 23, 2019Publication date: July 25, 2019Inventors: Lauren Marie Garten, David Samuel Ginley, Kristin Aslaug Ceder-Persson, Shyam Sundar Dwaraknath, Susan Trolier-McKinstry
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Publication number: 20190074428Abstract: A piezoelectric thin film element comprising a first electrode, a second electrode and one or more piezoelectric thin films there between wherein the first electrode is a platinum metal electrode having an average grain size greater than 50 nm and wherein a piezoelectric thin film adjacent the platinum metal electrode comprises a laminate having a plurality of piezoelectric thin film layers wherein a piezoelectric thin film layer contacting the platinum metal electrode comprises lead zirconate titanate (PZT) of composition at or about PbZrxTi1-xO3 where 0<x?0.60 and has a degree of pseudo cubic {100} orientation greater than or equal to 90%.Type: ApplicationFiled: March 14, 2017Publication date: March 7, 2019Inventors: Peter MARDILOVICH, Song-Won KO, Susan TROLIER-MCKINSTRY, Trent BORMAN
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Publication number: 20190006574Abstract: There is disclosed a piezoelectric thin film element comprising a first electrode, a second electrode and one or more piezoelectric thin films there between characterised in that the thin film element has at least two of: an electrode arrangement in which electrodes are arranged with the one or more piezoelectric thin films so that an electric field applied to a piezoelectric thin film or a portion of a piezoelectric thin film adjacent to the first electrode is lower than an electric field applied to a piezoelectric thin film or a portion of a piezoelectric thin film further from the first electrode when the piezoelectric thin film element actuated; a piezoelectric thin film adjacent to the first electrode in which a layer of the piezoelectric thin film near to the first electrode has a piezoelectric displacement constant which is lower than that of a layer of the piezoelectric thin film further from the first electrode; and a piezoelectric thin film adjacent to the first electrode in which a layer of theType: ApplicationFiled: June 10, 2016Publication date: January 3, 2019Applicant: XAAR TECHNOLOGY LIMITEDInventors: Peter Mardilovich, Susan Trolier-Mckinstry, Subramanian Sivaramakrishnan
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Publication number: 20180226418Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.Type: ApplicationFiled: February 9, 2018Publication date: August 9, 2018Inventors: Carl Sebastian MORANDI, Susan TROLIER-McKINSTRY, Kezhakkedath Ramunni UDAYAKUMAR, John Anthony RODRIGUEZ, Bhaskar SRINIVASAN
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Publication number: 20170358732Abstract: A piezoelectric thin film element having a first electrode, a second electrode and a piezoelectric thin film between the electrodes, wherein the thin film comprises a laminate having two or more piezoelectric thin film layers and wherein a first thin film layer is doped by one or more dopants and a second film layer is doped by one or more dopants and wherein at least one dopant of the second thin film layer is different from the dopant or dopants of the first thin film layer.Type: ApplicationFiled: November 4, 2015Publication date: December 14, 2017Applicant: XAAR TECHNOLOGY LIMITEDInventors: Peter Mardilovich, Susan Trolier-Mckinstry
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Patent number: 9748019Abstract: Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y), with 0?x<0.23 and 0?y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.Type: GrantFiled: July 12, 2016Date of Patent: August 29, 2017Assignee: The Penn State Research FoundationInventors: Elizabeth K. Michael, Susan Trolier-McKinstry
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Patent number: 9520207Abstract: Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y), with 0?x<0.23 and 0?y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.Type: GrantFiled: May 11, 2015Date of Patent: December 13, 2016Assignees: The Penn State University, National Science FoundationInventors: Elizabeth K. Michael, Susan Trolier-McKinstry
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Publication number: 20160318806Abstract: Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y), with 0?x<0.23 and 0?y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.Type: ApplicationFiled: July 12, 2016Publication date: November 3, 2016Inventors: Elizabeth K. Michael, Susan Trolier-McKinstry
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Publication number: 20150325331Abstract: Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y), with 0?x<0.23 and 0?y<0.9 and films with these average compositions with Bi2O3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm3. The process is a wet chemical process that produces thin films of Bi1.5Zn(0.5+y)Nb(1.5?x)Ta(x)O(6.5+y) without the use of 2-methoxyethanol and pyridine.Type: ApplicationFiled: May 11, 2015Publication date: November 12, 2015Inventors: Elizabeth K. Michael, Susan Trolier-McKinstry
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Patent number: 8828480Abstract: The invention relates to thin film single layers, electronic components such as multilayer capacitors which utilize thin film layers, and to their methods of manufacture. Chemical solution deposition and microcontact printing of dielectric and electrode layers are disclosed. High permittivity BaTiO3 multilayer thin film capacitors are prepared on Ni foil substrates by microcontact printing and by chemical solution deposition. Multilayer capacitors with BaTiO3 dielectric layers and LaNiO3 internal electrodes are prepared, enabling dielectric layer thicknesses of 1 ??m or less. Microcontact printing of precursor solutions of the dielectric and electrode layers is used.Type: GrantFiled: March 12, 2013Date of Patent: September 9, 2014Assignee: The Penn State Research FoundationInventors: Susan Trolier McKinstry, Clive A. Randall, Hajime Nagata, Pascal G. Pinceloup, James J. Baeson, Daniel J. Skamser, Michael S. Randall, Azizuddin Tajuddin
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Patent number: 8414962Abstract: The invention relates to thin film single layers, electronic components such as multilayer capacitors which utilize thin film layers, and to their methods of manufacture. Chemical solution deposition and microcontact printing of dielectric and electrode layers are disclosed. High permittivity BaTiO3 multilayer thin film capacitors are prepared on Ni foil substrates by microcontact printing and by chemical solution deposition. Multilayer capacitors with BaTiO3 dielectric layers and LaNiO3 internal electrodes are prepared, enabling dielectric layer thicknesses of 1 ?m or less. Microcontact printing of precursor solutions of the dielectric and electrode layers is used.Type: GrantFiled: October 28, 2005Date of Patent: April 9, 2013Assignee: The Penn State Research FoundationInventors: Susan Trolier McKinstry, Clive A. Randall, Hajime Nagata, Pascal I. Pinceloup, James J. Beeson, Daniel J. Skamser, Michael S. Randall, Azizuddin Tajuddin