Patents by Inventor Susanne Buschbaum

Susanne Buschbaum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THIN-FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR TCO LAYER, AND SOLAR CELL PRECURSOR LAYER STACK
    Publication number: 20120285522
    Abstract: Method of depositing a TCO layer on a substrate, of depositing precursors of a solar cell and precursors of a solar cell are described. The methods includes DC sputtering a ZnO-containing transparent conductive oxide layer over the substrate, the substrate having a size of 1.4 m2 or above and texturing the ZnO-containing transparent conductive oxide layer, wherein the textured ZnO-containing transparent conductive oxide layer has a root means square roughness of 60 nm or below.
    Type: Application
    Filed: May 10, 2012
    Publication date: November 15, 2012
    Applicant: Applied Materials, Inc.
    Inventors: Elisabeth Sommer, Philipp Obermeyer, Thomas Zilbauer, Inge Vermeir, Daniel Severin, Niels Kuhr, Markus Kress, Christof Kurthen, Ursula Ingeborg Schmidt, Stefan Klein, Susanne Buschbaum, Konrad Schwanitz, Christian Stoemmer, Tobias Stolley, Martin Rohde, Andreas Rembeck
  • THIN-FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR SOLAR CELL PRECURSOR LAYER STACK, AND SOLAR CELL PRECURSOR LAYER STACK
    Publication number: 20120080081
    Abstract: A method of manufacturing a layer stack adapted for a thin-film solar cell is and a precursor for a solar cell are described. The method includes depositing a TCO layer over a transparent substrate, depositing a first conductive-type layer a first p-i-n junction configured for the solar cell, depositing a first intrinsic-type layer of a first p-i-n junction configured for the solar cell and depositing a further conductive-layer with a conductivity opposite to the first conductive-type layer first p-i-n junction configured for the solar cell. The method further includes providing for a SiOx-containing intermediate layer by chemical vapor deposition and depositing a second p-i-n junction configured for the solar cell, wherein the SiOx-containing intermediate layer is provided within the a further conductive-type layer, and wherein the SiOx-containing layer has a thickness of 17 nm or less.
    Type: Application
    Filed: October 12, 2010
    Publication date: April 5, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Stefan KLEIN, Tobias STOLLEY, Susanne Buschbaum, Martin Rohde, Konrad Schwanitz, Christian Stoemmer