Patents by Inventor Susanne Leppack

Susanne Leppack has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8664115
    Abstract: A passivation layer is formed on inlaid Cu for protection against oxidation and removal during subsequent removal of an overlying metal hardmask. Embodiments include treating an exposed upper surface of inlaid Cu with hydrofluoric acid and a copper complexing agent, such as benzene triazole, to form a passivation monolayer of a copper complex, etching to remove the metal hardmask, removing the passivation layer by heating to at least 300° C., and forming a barrier layer on the exposed upper surface of the inlaid Cu.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: March 4, 2014
    Inventors: Christin Bartsch, Susanne Leppack
  • Publication number: 20120315755
    Abstract: A passivation layer is formed on inlaid Cu for protection against oxidation and removal during subsequent removal of an overlying metal hardmask. Embodiments include treating an exposed upper surface of inlaid Cu with hydrofluoric acid and a copper complexing agent, such as benzene triazole, to form a passivation monolayer of a copper complex, etching to remove the metal hardmask, removing the passivation layer by heating to at least 300° C., and forming a barrier layer on the exposed upper surface of the inlaid Cu.
    Type: Application
    Filed: June 10, 2011
    Publication date: December 13, 2012
    Applicant: GLOBALFOUNDRIES Inc.
    Inventors: Christin Bartsch, Susanne Leppack
  • Patent number: 8110498
    Abstract: When forming sophisticated metallization systems, surface integrity of an exposed metal surface, such as a copper-containing surface, may be enhanced by exposing the surface to a vapor of a passivation agent. Due to the corresponding interaction with the metal surface, enhanced integrity may be accomplished, while at the same time damage of exposed dielectric surface portions may be significantly reduced compared to conventional aggressive wet chemical cleaning processes that are typically used in conventional patterning regimes.
    Type: Grant
    Filed: September 9, 2009
    Date of Patent: February 7, 2012
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Matthias Schaller, Daniel Fischer, Susanne Leppack
  • Publication number: 20100301494
    Abstract: Silicon oxide based low-k dielectric materials may be provided with a hydrophobic low-k surface area, even after exposure to a reactive process ambient, by performing a surface treatment on the basis of hexamethylcyclotrisilazane and/or octamethylcyclotetrasilazane. In addition to the surface treatment, a polymerization may be initiated on the basis of a hydrophobic surface nature of the silicon-based dielectric material, thereby increasing the chemical stability during the further processing.
    Type: Application
    Filed: May 24, 2010
    Publication date: December 2, 2010
    Inventors: Matthias Schaller, Thomas Oszinda, Susanne Leppack, Daniel Fischer
  • Publication number: 20100081277
    Abstract: When forming sophisticated metallization systems, surface integrity of an exposed metal surface, such as a copper-containing surface, may be enhanced by exposing the surface to a vapor of a passivation agent. Due to the corresponding interaction with the metal surface, enhanced integrity may be accomplished, while at the same time damage of exposed dielectric surface portions may be significantly reduced compared to conventional aggressive wet chemical cleaning processes that are typically used in conventional patterning regimes.
    Type: Application
    Filed: September 9, 2009
    Publication date: April 1, 2010
    Inventors: Matthias Schaller, Daniel Fischer, Susanne Leppack