Patents by Inventor Susanne Pawlik
Susanne Pawlik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240154382Abstract: A laser device with one or more active regions, such as quantum wells, gain/lighting media, or other devices, and one or more non-absorbing regions, may be formed by a first growth run (growing a first semiconductor layer), then performing selective, shallow-depth etching, and then a second growth run (growing a second semiconductor layer). The laser device may include a first portion, one or more active regions located on the first portion, and a second portion located on the active region(s). A third portion may be located on one or more ends of the first portion and on the second portion. The third portion may be formed during the second growth run, after the etching step. The non-absorbing region(s) may be formed by the third portion and the end(s) of the first portion. If desired, the non-absorbing region(s) may be produced without annealing or locally-induced quantum well intermixing.Type: ApplicationFiled: October 17, 2023Publication date: May 9, 2024Inventors: René TODT, Markus ROSCH, Evgeny ZIBIK, Susanne PAWLIK, Gustavo VILLARES
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Patent number: 11824322Abstract: A laser device with one or more active regions, such as quantum wells, gain/lighting media, or other devices, and one or more non-absorbing regions, may be formed by a first growth run (growing a first semiconductor layer), then performing selective, shallow-depth etching, and then a second growth run (growing a second semiconductor layer). The laser device may include a first portion, one or more active regions located on the first portion, and a second portion located on the active region(s). A third portion may be located on one or more ends of the first portion and on the second portion. The third portion may be formed during the second growth run, after the etching step. The non-absorbing region(s) may be formed by the third portion and the end(s) of the first portion. If desired, the non-absorbing region(s) may be produced without annealing or locally-induced quantum well intermixing.Type: GrantFiled: March 18, 2021Date of Patent: November 21, 2023Assignee: II-VI DELAWARE, INC.Inventors: René Todt, Markus Rösch, Evgeny Zibik, Susanne Pawlik, Gustavo F. Villares
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Publication number: 20230246415Abstract: A dual output laser diode may include first and second end facets and an active section. The first and second end facets have low reflectivity. The active section is positioned between the first end facet and the second end facet. The active section is configured to generate light that propagates toward each of the first and second end facets. The first end facet is configured to transmit a majority of the light that reaches the first end facet through the first end facet. The second end facet is configured to transmit a majority of the light that reaches the second end facet through the second end facet.Type: ApplicationFiled: April 10, 2023Publication date: August 3, 2023Inventors: Nadhum Kadhum Zayer, Abram Jakubowicz, Jean Axel Edmond Teissier, Susanne Pawlik
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Patent number: 11652332Abstract: A dual output laser diode may include first and second end facets and an active section. The first and second end facets have low reflectivity. The active section is positioned between the first end facet and the second end facet. The active section is configured to generate light that propagates toward each of the first and second end facets. The first end facet is configured to transmit a majority of the light that reaches the first end facet through the first end facet. The second end facet is configured to transmit a majority of the light that reaches the second end facet through the second end facet.Type: GrantFiled: August 11, 2020Date of Patent: May 16, 2023Assignee: II-VI DELAWARE, INCInventors: Nadhum Kadhum Zayer, Abram Jakubowicz, Jean Axel Edmond Teissier, Susanne Pawlik
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Publication number: 20220263285Abstract: A laser device with one or more active regions, such as quantum wells, gain/lighting media, or other devices, and one or more non-absorbing regions, may be formed by a first growth run (growing a first semiconductor layer), then performing selective, shallow-depth etching, and then a second growth run (growing a second semiconductor layer). The laser device may include a first portion, one or more active regions located on the first portion, and a second portion located on the active region(s). A third portion may be located on one or more ends of the first portion and on the second portion. The third portion may be formed during the second growth run, after the etching step. The non-absorbing region(s) may be formed by the third portion and the end(s) of the first portion. If desired, the non-absorbing region(s) may be produced without annealing or locally-induced quantum well intermixing.Type: ApplicationFiled: March 18, 2021Publication date: August 18, 2022Inventors: René Todt, Markus Rösch, Evgeny Zibik, Susanne Pawlik, Gustavo F. Villares
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Publication number: 20220052510Abstract: A dual output laser diode may include first and second end facets and an active section. The first and second end facets have low reflectivity. The active section is positioned between the first end facet and the second end facet. The active section is configured to generate light that propagates toward each of the first and second end facets. The first end facet is configured to transmit a majority of the light that reaches the first end facet through the first end facet. The second end facet is configured to transmit a majority of the light that reaches the second end facet through the second end facet.Type: ApplicationFiled: August 11, 2020Publication date: February 17, 2022Inventors: Nadhum Kadhum Zayer, Abram Jakubowicz, Jean Axel Edmond Teissier, Susanne Pawlik
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Patent number: 7715457Abstract: Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump lasers for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability. This is achieved by separating the waveguide ridge into an active main ridge section (4) and at least one separate section (12) located at an end of the laser diode, which may be passive. The separation is provided by a trench or gap (10) in the waveguide ridge.Type: GrantFiled: November 20, 2006Date of Patent: May 11, 2010Assignee: Oclaro Technology plcInventors: Berthold Schmidt, Susanne Pawlik
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Publication number: 20080273563Abstract: Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump lasers for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability. This is achieved by separating the waveguide ridge into an active main ridge section (4) and at least one separate section (12) located at an end of the laser diode, which may be passive. The separation is provided by a trench or gap (10) in the waveguide ridge.Type: ApplicationFiled: November 20, 2006Publication date: November 6, 2008Inventors: Berthold Schmidt, Susanne Pawlik
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Patent number: 7218659Abstract: Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two “unpumped end sections” of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6).Type: GrantFiled: July 14, 2004Date of Patent: May 15, 2007Assignee: Bookham Technology plcInventors: Berthold Schmidt, Susanne Pawlik, Achim Thies, Christoph Harder
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Publication number: 20050030998Abstract: Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two “unpumped end sections” of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6).Type: ApplicationFiled: July 14, 2004Publication date: February 10, 2005Inventors: Berthold Schmidt, Susanne Pawlik, Achim Thies, Christoph Harder
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Patent number: 6798815Abstract: Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting of novel design of the ridge waveguide of the laser. Essentially the novel design consists in a segmented ridge waveguide having at least two straight segments, i.e. segments with constant, but different cross sections or widths, and at least one flared segment connecting the two different straight segments. A further improvement can be achieved by combining this approach with a laser diode design termed “unpumped end sections” and described in copending U.S. patent application Ser. No. 09/852,994, entitled “High Power Semiconductor Laser Diode”.Type: GrantFiled: April 24, 2002Date of Patent: September 28, 2004Assignee: Bookham Technology PLCInventors: Berthold Schmidt, Susanne Pawlik, Norbert Lichtenstein
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Patent number: 6782024Abstract: Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two “unpumped end sections” of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6).Type: GrantFiled: May 10, 2001Date of Patent: August 24, 2004Assignee: Bookham Technology plcInventors: Berthold Schmidt, Susanne Pawlik, Achim Thies, Christoph Harder
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Publication number: 20040008746Abstract: Semiconductor laser diodes, particularly high power ridge waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular consisting of novel design of the ridge waveguide of the laser. Essentially the novel design consists in a segmented ridge wave-guide having at least two straight segments, i.e. segments with constant, but different cross sections or widths, and at least one flared segment connecting the two different straight segments. A further improvement can be achieved by combining this approach with a laser diode design termed “unpumped end sections” and described in copending U.S. patent application Ser. No. 09/852 994, entitled “High Power Semiconductor Laser Diode”.Type: ApplicationFiled: April 24, 2002Publication date: January 15, 2004Inventors: Berthold Schmidt, Susanne Pawlik, Norbert Lichtenstein
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Publication number: 20020167982Abstract: Semiconductor laser diodes, particularly high power AlGaAs-based ridge-waveguide laser diodes, are often used in opto-electronics as so-called pump laser diodes for fiber amplifiers in optical communication lines. To provide the desired high power output and stability of such a laser diode and avoid degradation during use, the present invention concerns an improved design of such a device, the improvement in particular significantly minimizing or avoiding (front) end section degradation of such a laser diode and significantly increasing long-term stability compared to prior art designs. This is achieved by establishing one or two “unpumped end sections” of the laser diode. One preferred way of providing such an unpumped end section at one of the laser facets (10, 12) is to insert an isolation layer (11, 13) of predetermined position, size, and shape between the laser diode's semiconductor material and the usually existing metallization (6).Type: ApplicationFiled: May 10, 2001Publication date: November 14, 2002Inventors: Berthold N. Schmidt, Susanne Pawlik, Achim Thies, Christoph Harder