Abstract: The invention relates to a method for correcting a telecentricity error of an imaging device for semiconductor lithography having an illumination unit, an imaging optical unit, and a filter for correcting the telecentricity error, having the following method steps: determining the telecentricity error of the imaging device, designing a filter for correcting the telecentricity error, arranging the filter in the pupil plane of the illumination unit, determining the telecentricity error again, and repeating the method steps one to four until the telecentricity error falls below a specified telecentricity error. The invention furthermore relates to an imaging device for semiconductor lithography, which is configured for carrying out the method.

Abstract: The present invention relates to a method for evaluating a statistically distributed measured value in the examination of an element for a photolithography process, comprising the following steps: (a) using a plurality of parameters in a trained machine learning model, wherein the parameters characterize a state of a measurement environment in a time period assigned to a measurement of the measured value; and (b) executing the trained machine learning model in order to evaluate the measured value.

Abstract: A method for ascertaining distortion properties of an optical system in a measurement system for microlithography is provided, wherein the optical system images at least one structure to be measured into a measurement image.

Abstract: A method for ascertaining distortion properties of an optical system in a measurement system for microlithography is provided, wherein the optical system images at least one structure to be measured into a measurement image.