Abstract: The present invention relates to the field of biotechnology. Specifically, the invention provides antigen-specific T-cell receptors (TCRs). Further, the invention encompasses polynucleotides encoding the same and vectors comprising said polynucleotides. Host cells comprising the molecules of the invention are also provided. Moreover, the invention provides means and methods for diagnostics and therapy, in particular of cancer.

Abstract: The present disclosure generally addresses the problem of controlling a plating profile in multi-step recipes and addresses, in particular, the problem of compensating for variations of the plating tool state to stabilize the plating results. The compensation is done by adjustments of corrections factors for currents of a plating tool in a multi-anode configuration. The described method enables control of recipes with different current ratios in each recipe step and models different deposition sensitivities in each recipe step. Generally, the method of the present disclosure requires a measurement step, where the tool state is determined, and a data processing step, where the correction factors are set based on models describing the plating process and the tool state.

Abstract: By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.

Abstract: By performing an electroless deposition and an electro deposition process in situ, highly reliable metallizations may be provided, wherein limitations with respect to contaminations and device scaling, encountered by conventional chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) techniques for the formation of seed layers may be overcome. In some embodiments, a barrier layer is also deposited on the basis of a wet chemical deposition process.

Abstract: By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.

Abstract: The present disclosure generally addresses the problem of controlling a plating profile in multi-step recipes and addresses, in particular, the problem of compensating for variations of the plating tool state to stabilize the plating results. The compensation is done by adjustments of corrections factors for currents of a plating tool in a multi-anode configuration. The described method enables control of recipes with different current ratios in each recipe step and models different deposition sensitivities in each recipe step. Generally, the method of the present disclosure requires a measurement step, where the tool state is determined, and a data processing step, where the correction factors are set based on models describing the plating process and the tool sate.

Abstract: By suppressing the presence of free oxygen during a cleaning process and a subsequent electrochemical deposition of a seed layer, the quality of a corresponding interface between the barrier material and the seed layer may be enhanced, thereby also improving performance and the characteristics of the finally obtained metal region. Thus, by identifying free oxygen as a main source for negatively affecting the characteristics of metals during a “direct on barrier” plating process, efficient strategies have been developed and are disclosed herein to provide a reliable technique for volume production of sophisticated semiconductor devices.

Abstract: By performing an electroless deposition and an electro deposition process in situ, highly reliable metallizations may be provided, wherein limitations with respect to contaminations and device scaling, encountered by conventional chemical vapor deposition (CVD), atomic layer deposition (ALD) and physical vapor deposition (PVD) techniques for the formation of seed layers may be overcome. In some embodiments, a barrier layer is also deposited on the basis of a wet chemical deposition process.

Abstract: An aqueous coating composition useful as electro-deposition coatings includes (A') an aqueous dispersion of a resin (A) having functional groups which are reactive toward isocyanate, and (B') an aqueous, solvent-free dispersion of a solubilized masked polyisocyanate (B). The coating is cured by baking at a temperature which regenerates the isocyanate groups.

Abstract: Aqueous synthetic resin dispersions comprising (A) an ionic resin, based on aralkylated epoxy resins, (B) a blocked polyisocyanate and (C) a polymer of at least one olefinically unsaturated monomer which is capable of undergoing free-radical polymerization are useful, for example, as binders in processes of coating by electrodeposition.

Abstract: Process for preparing aqueous dispersions by free-radically initiated emulsion polymerization of one or more vinyl monomers in water in the presence of a cationically stabilized polyurethane as emulsifier.

Abstract: Catalysts useful for the curing of, for example, cataphoretic deposition coating materials, including water-soluble bismuth compounds and an epoxy-amine adduct, the preparation of the bismuth compound involving acid being employed in a quantity such that there are less than 2 mol of dissociable protons per mole of bismuth.

Abstract: Polyesters obtained by reacting from 5 to 50 parts of at least one linear or branched, aliphatic or cycloaliphatic, at least dihydric alcohol, from 2 to 40 parts of at least one at least dibasic, aromatic carboxylic acid, from 0 to 40 parts of at least one 2-alkenyldicarboxylic anhydride, from 10 to 30 parts of at least one at least dibasic, linear or branched, aliphatic carboxylic acid, from 0 to 15 parts of an aliphatic, linear or branched hydroxy acid, from 0 to 15 parts of an aliphatic, linear or branched polyamine having at least one primary and at least one secondary or tertiary amino group, from 0 to 15 parts of a glycidyl ester of a branched, aliphatic monocarboxylic acid or of a glycidyl ether of a branched, aliphatic alcohol, and from 0 to 15 parts of polyhydroxyamine are useful, for example, as additives in coating compositions.

Abstract: Solvent-free aqueous synthetic-resin dispersions comprising a polymer (A) which is obtained by polymerization of (A1) capped polyisocyanates in which some of the capping groups contain an ethylenically unsaturated group, and (A2) ethylenically unsaturated monomers in the presence of an ionic resin (B). The resin is useful in electrodeposition coatings.

Abstract: These reaction products are suitable as catalysts with improved properties for curing coating binders.

Abstract: Reaction products of dialkyltin oxide and polyhydric phenols.These reaction products are suitable as catalysts with improved properties for curing coating binders.

Abstract: An electrodeposition bath comprising a urethane of the formulaR.sub.1 --NHCOO--R.sub.2in whichR.sub.1 is alkyl or a group of the formulaB.sub.1 --NH--B.sub.2 --[X--B.sub.3 ].sub.n --,R.sub.2 is a group of the formulae --(C.sub.2 H.sub.4 O).sub.y --R.sub.1, --(C.sub.3 H.sub.7 O).sub.y --R or of the formula ##STR1## R is C.sub.1 -C.sub.18 -alkyl, Y is a number from zero to 4,B.sub.1 is hydrogen, alkyl or a group of the formula--COOR.sub.2,B.sub.2 and B.sub.3 may be identical or different and are C.sub.2 -C.sub.14 -alkylene,n is an integer from 0 to 5,X is --0--, --S--, --NH--or >N--(C.sub.1 -C.sub.4) alkyl,R.sub.3 is hydrogen, alkyl, alkenyl, hydroxyalkyl, phenyl or alkylphenyl,R.sub.4 and R.sub.5 may be identical or different and are hydrogen or C.sub.1 -C.sub.4 -alkyl andA is a direct bond or one of the groups --O--, --CH.sub.2 O- or --CH.sub.2 OCO--.The inclusion of these urethanes in the electrodeposition bath brings about a reduction in the number of surface defects on galvanized surfaces.