Patents by Inventor Susant Kumar Acharya

Susant Kumar Acharya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11856877
    Abstract: A lithographically fabricated electrode comprises a continuous metal film; and a discontinuous metal film. The discontinuous metal film has a first edge proximal to the continuous metal film, and a second edge distal the continuous metal film.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: December 26, 2023
    Assignee: The University of Canterbury
    Inventors: Simon Anthony Brown, Edoardo Galli, Susant Kumar Acharya
  • Publication number: 20210193921
    Abstract: A lithographically fabricated electrode comprises a continuous metal film; and a discontinuous metal film. The discontinuous metal film has a first edge proximal to the continuous metal film, and a second edge distal the continuous metal film.
    Type: Application
    Filed: December 23, 2020
    Publication date: June 24, 2021
    Inventors: Simon Anthony Brown, Edoardo Galli, Susant Kumar Acharya
  • Patent number: 10886466
    Abstract: The present invention relates to a variable resistor comprises a first electrode, a second electrode, and a resistive switching layer disposed between the first electrode and the second electrode, wherein the resistive switching layer has a Brown-Millerite structure crystallized in an inclined orientation across the first electrode and the second electrode as an initial structure.
    Type: Grant
    Filed: February 20, 2018
    Date of Patent: January 5, 2021
    Assignee: HANKUK UNIVERSITY OF FOREIGN STUDIES RESEARCH BUSINESS FOUNDATION
    Inventors: Chang-Uk Jung, Susant Kumar Acharya, Venkata Raveendra Nallagatla, Bo Wha Lee, Chunli Liu
  • Publication number: 20190259945
    Abstract: The present invention relates to a variable resistor comprises a first electrode, a second electrode, and a resistive switching layer disposed between the first electrode and the second electrode, wherein the resistive switching layer has a Brown-Millerite structure crystallized in an inclined orientation across the first electrode and the second electrode as an initial structure.
    Type: Application
    Filed: February 20, 2018
    Publication date: August 22, 2019
    Inventors: Chang-Uk Jung, Susant Kumar Acharya, Venkata Raveendra Nallagatla, Bo Wha Lee, Chunli Liu
  • Publication number: 20170170395
    Abstract: A resistive switching memory device using a brownmillerite-structured material, the resistive switching memory device comprises a first electrode comprising an oxide electrode; a resistive switching unit that is disposed on the first electrode and comprises a thin-film of a brownmillerite structured oxide; and a second electrode that is disposed on the resistive switching unit. Furthermore, the resistive switching unit has a structure in which an octahedron structure layer and a tetrahedron structure layer are sequentially stacked.
    Type: Application
    Filed: August 14, 2015
    Publication date: June 15, 2017
    Inventors: Chang-Uk Jung, Bo-Hwa Lee, Octolia Togibasa Tambunan, Susant Kumar Acharya