Abstract: An integrated circuit assembly includes a support (e.g., package substrate or circuit board) and a semiconductor die including a device. The semiconductor die is mounted to the support with the device facing the support. The device can be, for example, a quantum well laser device or a photonics device. A layer of decoupling material is on the device. An underfill material is between the semiconductor die and the support, where the decoupling material is between the device and the underfill material. The decoupling layer decouples stress from transferring from the underfill material into the device. For example, the decoupling material forms only weak bonds with the underfill material and/or a passivation layer on the device, in an embodiment. Weak bonds include non-covalent bonds and non-ionic bonds, for example. The decoupling material can be, for instance, a PTFE film, a poly(p-xylylene) film, a fluorocarbon, or a compound lacking free hydroxyl groups.

Abstract: An integrated circuit assembly includes a support (e.g., package substrate or circuit board) and a semiconductor die including a device. The semiconductor die is mounted to the support with the device facing the support. The device can be, for example, a quantum well laser device or a photonics device. A layer of decoupling material is on the device. An underfill material is between the semiconductor die and the support, where the decoupling material is between the device and the underfill material. The decoupling layer decouples stress from transferring from the underfill material into the device. For example, the decoupling material forms only weak bonds with the underfill material and/or a passivation layer on the device, in an embodiment. Weak bonds include non-covalent bonds and non-ionic bonds, for example. The decoupling material can be, for instance, a PTFE film, a poly(p-xylylene) film, a fluorocarbon, or a compound lacking free hydroxyl groups.

Abstract: Apparatuses, processes, and systems related to an interconnect with an increased z-height and decreased reflow temperature are described herein. In embodiments, an interconnect may include a solder ball and a solder paste to couple the solder ball to a substrate. The solder ball and/or solder paste may be comprised of an alloy with a relatively low melting point and an alloy with a relatively high melting point.

Abstract: A solder is deposited on a heat sink. The solder is first reflowed at a first temperature that is below about 120° C. The solder is second heat aged at a temperature that causes the first reflowed solder to have an increased second reflow temperature. The heat aging process results in less compressive stress in a die that uses the solder as a thermal interface material. The solder can have a composition that reflows and adheres to the die and the heat sink without the use of organic fluxes.

Abstract: Some embodiments of the invention include a coated thermal interface to bond a die with a heat spreader. The coated thermal interface may be used to bond the die with the heat spreader without flux. Other embodiments are described and claimed.

Abstract: An integrated heat spreader and die coupled with solder are disclosed herein. The heat spreader may have solder reservoirs. Additionally, the heat spreader and die may be coupled during a reflow process where the gaseous pressure surrounding the integrated heat spreader and the die is varied.

Abstract: Integrated heat spreader and die coupled with solder in a manner forming an intermetallic compound having a higher liquidus temperature than the liquidus temperature of the solder used to create the intermetallic compound are described herein.

Abstract: Integrated heat spreader and die coupled with solder. The heat spreader may have solder reservoirs. Additionally, the heat spreader and die may be coupled during a reflow process where the gaseous pressure surrounding the integrated heat spreader and the die is varied.

Abstract: Disclosed are embodiments of a method of attaching a die to a substrate and a heat spreader to the die in a single heating operation. A number of conductive bumps extending from the die may also be reflowed during this heating operation. Other embodiments are described and claimed.

Abstract: Integrated heat spreader and die coupled with solder in a manner forming an intermetallic compound having a higher liquidus temperature than the liquidus temperature of the solder used to create the intermetallic compound are described herein.

Abstract: An apparatus and system, as well as fabrication methods therefor, may include a die having a surface and a primary material comprising tin, pure tin, or substantially pure tin coupled to the surface. A heat dissipating element may be coupled to the primary material.

Abstract: An apparatus and system, as well as fabrication methods therefor, may include a die having a surface and a primary material comprising tin, pure tin, or substantially pure tin coupled to the surface. A heat dissipating element may be coupled to the primary material.