Abstract: A method of producing a P-type nitride semiconductor includes, in order, applying an SOG solution containing group II atoms on a substrate made of a nitride semiconductor, baking the substrate to form an SOG film, diffusing the group II atoms into the substrate by subjecting the substrate to an annealing treatment under an inert gas atmosphere, and removing the SOG film from the substrate.

Abstract: Conductive member 31 comprises a plurality of conductive nitride layers 32 and at least one nitride-metal layer 33 that includes a conductive nitride and a metal. The conductive nitride layers 32 and the at least one nitride-metal layer 33 are alternately stacked. Nitride-metal layer 33 includes metal dispersion layer 33A in which the metal is dispersed in the conductive nitride.

Abstract: A method for manufacturing an electronic device includes a stretchable member attachment step of attaching stretchable member 21 to first substrate 2 on which second substrate 3 is stacked, a first modification line formation step of forming one or more first modification lines 22 by irradiating the first substrate 2 with a laser beam, and a dividing step of stretching the stretchable member 21 to divide the first substrate 2 along the one or more first modification lines 22.

Abstract: According to one embodiment, a data processing apparatus includes a processor. The processor calculates, from the first measurement data, a first differential value set that is a set of first differential values in a time direction at a time included in the first period of the measurement values of the sensor of interest. The processor calculates, from the second measurement data, a second differential value set that is a set of second differential values in a time direction at a time included in the second period of the measurement values of the sensor of interest. The processor generates a first differential value distribution and a second differential value distribution using the second differential value set.

Abstract: An element array circuit includes first wirings including respective first parts, second wirings including respective second parts, and impedance elements each coupled to both one of the first wirings and one of the second wirings. The second parts extend in a direction different from that in which the first parts extend. Each of the second wirings includes a readout line through which signals flow, the signals indicating states of multiple ones of the impedance elements coupled to relevant one of the second wirings. Each of the first parts is a part, of relevant one of the first wirings, to which multiple ones of the impedance elements are coupled. Each of the second parts is a part, of relevant one of the second wirings, to which multiple ones of the impedance elements are coupled. The first parts are smaller than the second parts in electrical resistance value per unit length.

Abstract: A clean silicon wafer, having a DZ layer free of micro-defects formed in a device active region on the surface of the thermally-processed silicon wafer, an IG layer having a high gettering capability formed in a bulk layer, and little heavy metal contamination on the wafer surface is manufactured. A method for manufacturing a silicon wafer for performing the rapid thermal process for a silicon wafer in a furnace, the method performs the rapid thermal process with a thermal budget of 53% or more and 65% or less, in terms of a thermal budget with temperature and time, when a condition where a thermal process at a highest temperature of 1350° C. is maintained for a predetermined longest holding time is taken as 100% of the thermal budget.

Abstract: A thermistor element includes: a thermistor film formed of an oxide having a spinel crystal structure; a first surface-side electrode provided in contact with a first surface of the thermistor film; and a second surface-side electrode provided in contact with a second surface of the thermistor film, wherein the first surface-side electrode includes a first electrode and a second electrode, and at least a part of the first electrode and at least a part of the second electrode are disposed to overlap the second surface-side electrode, and in the thermistor film, an oxygen concentration of a second region between the first electrode and the second electrode in a plan view is higher than that of a first region consisting of a region that overlaps the first electrode and the second surface-side electrode and a region that overlaps the second electrode and the second surface-side electrode.

Abstract: An electromagnetic wave detection element has: an electromagnetic wave detection portion; a conductive layer that is electrically connected to the electromagnetic wave detection portion; a conductive pillar having an end surface that is electrically connected to the conductive layer, wherein the end surface includes an inner region that is in contact with the conductive layer and an outer region that is positioned outside the inner region; and a dielectric layer that is positioned between at least a part of the outer region and the conductive layer.

Abstract: The electromagnetic wave sensor includes: a first substrate; a first wire which extends in a first direction parallel to a substrate surface of the first substrate in a plan view from a direction perpendicular to the substrate surface; a second wire which extends in a direction parallel to the substrate surface and different from the first direction in the plan view; and an electromagnetic wave detector which is electrically connected to the first wire and is electrically connected to the second wire, wherein the first wire is located on the first substrate side in relation to the electromagnetic wave detector in a third direction orthogonal to the first direction and the second direction and the second wire is located on a side opposite to the first substrate in relation to the electromagnetic wave detector in the third direction.

Abstract: An electromagnetic wave sensor includes: a first wire which extends in a first direction; a second wire which extends in a second direction different from the first direction; and an electromagnetic wave detector which is electrically connected to the first wire and is electrically connected to the second wire, wherein the second wire is provided so as to leave an interval with respect to the first wire in a third direction orthogonal to the first direction and the second direction, and the second wire is disposed to three-dimensionally intersect the first wire. At least one wire of the first wire and the second wire includes a wide portion, which is wider than an average value of a width of a portion excluding an overlapping portion of the at least one wire, in the overlapping portion in which the first wire and the second wire overlap each other.

Abstract: An electromagnetic wave sensor 1 has electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each electromagnetic wave absorber at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each electromagnetic wave absorber is away from the second extending portions with the connection portions as fulcrums.

Abstract: An element array circuit includes one or more first wiring lines, second wiring lines, impedance elements, one or more operational amplifiers, one or more conversion elements, and one or more switchers. The second wiring lines each extend in a direction different from a direction of extension of the first wiring lines. The impedance elements are each coupled to one each of the first and second wiring lines. The operational amplifiers each include a positive input terminal, a negative input terminal couplable to one of the second wiring lines, and an output terminal. The conversion elements are each coupled to the negative input terminal and the output terminal, and each convert a current flowing through the second wiring line coupled to the negative input terminal into a voltage. The switchers are each coupled to one of the conversion elements and come into a conducting state or a nonconducting state.

Abstract: The light detection element includes a magnetic element and an optical waveguide. The magnetic element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The optical waveguide includes at least a core and a cladding covering at least a part of the core. Light that has propagated through the optical waveguide is applied to the magnetic element.

Abstract: The light detection element includes a magnetic element and an optical waveguide. The magnetic element includes a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer. The optical waveguide includes at least a core and a cladding covering at least a part of the core. Light that has propagated through the optical waveguide is applied to the magnetic element.

Abstract: A thermistor element includes: a thermistor film; a first electrode provided in contact with one surface of the thermistor film; and a pair of second electrodes provided in contact with an other surface of the thermistor film, wherein the thermistor film is provided to cover a periphery of the first electrode.

Abstract: Electromagnetic wave sensor (infrared sensor) 1 has: a first substrate; a second substrate that faces the first substrate and that allows infrared rays to pass through at least a part of the second substrate; first circumferential wall 4a that is positioned between the first substrate and the second substrate and that forms first space 8a together with the first and second substrates; bolometer structures 7 that are provided in first space 8a; first measuring element 9a that is provided in first space 8a and that is used for taking a first measurement relating to pressure P1 in first space 8a; and a monitoring portion. The monitoring portion acquires the first measurement that is taken using first measuring element 9a and outputs a predetermined signal indicating an abnormality based on at least the first measurement.

Abstract: A thermistor element includes: a thermistor film; a pair of first electrodes in contact with one surface of the thermistor film; an insulation film opposite to a contact side of the pair of first electrodes, the contact side on which the pair of first electrodes is in contact with the thermistor film; and at least one opening portion located in a region which overlaps each of the first electrodes when viewed in a plan view and passing through the insulation film. Each first electrode has a first portion located where each of the first electrodes and the opening portion overlap when viewed in a plan view and a second portion outside of where each of the first electrodes and the opening portion overlap when viewed in a plan view and is over the first portion and second portion to be in contact with the one surface of the thermistor film.

Abstract: A thermistor element includes a thermistor film, a first electrode provided in contact with one surface of the thermistor film, and a pair of second electrodes provided in contact with the other surface of the thermistor film, wherein the thermistor film includes an oxide having a spinel crystal structure and having a [111] preferred orientation in a film thickness direction.

Abstract: The present invention includes an electromagnetic wave detector, and a pair of arm portions and that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element, and electromagnetic wave absorbers which cover at least a part of the temperature detection element. Each of the arm portions includes a conductor layer which is in a line shape and electrically connected to the temperature detection element, and dielectric layers which are disposed on both sides of the conductor layer. In a short direction of the dielectric layers in a plan view, the conductor layer has a shape protruding outward beyond both end portions of the dielectric layers in the short direction.

Abstract: A structure body includes: an electromagnetic wave detector; and a pair of arm portions that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element and an electromagnetic wave absorber which covers at least a part of the temperature detection element. Each of the arm portions includes a wiring layer which is in a line shape and electrically connected to the temperature detection element, and protective layers, a part of each of which is disposed on corresponding one of both sides of the wiring layer. The protective layers are made of a material having a lower thermal conductivity than the wiring layer. In a short direction of the protective layers in a plan view, the wiring layer is positioned on an inward side of both end portions of the protective layers in the short direction.