Abstract: This disclosure herein pertains to a method for producing a GaP epitaxial wafer used for fabrication of light emitting diodes having higher brightness than light emitting diodes fabricated from a GaP epitaxial wafer produced by a conventional method have. The method comprises the steps of: preparing a GaP layered substrate 15 with one or more GaP layers on a GaP single crystal substrate 10 in the first series of liquid phase epitaxial growth; obtaining a layered GaP substrate 15a by eliminating surface irregularities of said GaP layered substrate 15 by mechano-chemical polishing to make the surface to be planar; and then forming a GaP light emitting layer composite 19 on said layered GaP substrate 15a in the second series of liquid phase epitaxial growth.

Abstract: To provide a GaP red light emitting element substrate which a large amount of oxygen is doped in the p-type GaP layer, and which very few Ga.sub.2 O.sub.3 precipitates develop on and/or in p-type GaP layer, and methods of manufacturing said substrate. After the n-type GaP layer 2 is grown on the n-type GaP single crystal substrate 1, when forming the p-type GaP layer 3 doped with Zn and O, on said n-type GaP layer 2 by means of the liquid phase epitaxial growth method, the p-type GaP layer 3 is grown by using a Ga solution with a high concentration of oxygen, and said Ga solution is removed from the substrate 1 to complete the growth when the temperature is lowered to a prescribed temperature of 980.degree. C. or higher. When the temperature has reached the prescribed temperature of 980.degree. C.

Abstract: A GaP red light emitting diode (LED) which is free from a problem of luminance reduction comprises an n-type GaP epitaxial layer grown on an n-type GaP substrate, and a p-type GaP epitaxial layer grown on the n-type Gap epitaxial layer, wherein the n-type epitaxial layer has an Si concentration of not more than 5.times.10.sup.17 atoms/cc and an S concentration of not more than 1.times.10.sup.18 atoms/cc.