Patents by Inventor Susumu Gotoh
Susumu Gotoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7049607Abstract: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.Type: GrantFiled: September 29, 2004Date of Patent: May 23, 2006Assignees: Hitachi High-Technologies Corporation, Canon Kabushiki KaishaInventors: Yasunari Sohda, Hiroya Ohta, Osamu Kamimura, Susumu Gotoh
-
Publication number: 20050040343Abstract: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.Type: ApplicationFiled: September 29, 2004Publication date: February 24, 2005Inventors: Yasunari Sohda, Hiroya Ohta, Osamu Kamimura, Susumu Gotoh
-
Patent number: 6838682Abstract: There is provided an electron beam exposure technique which permits optical adjustment in an electron optics system using a doublet lens necessary for large field projection. Electron beam exposure equipment having a part forming one image by at least two electromagnetic lenses, has means measuring the position of an electron beam near an image plane with changing excitation of at least two lenses at the same time; and control means feeding back the measured result to aligners or the intensity of the lenses.Type: GrantFiled: August 6, 2003Date of Patent: January 4, 2005Assignees: Hitachi High-Technologies Corporation, Canon Kabushiki KaishaInventors: Yasunari Sohda, Osamu Kamimura, Hiroya Ohta, Susumu Gotoh
-
Patent number: 6809319Abstract: Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample. The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.Type: GrantFiled: July 30, 2003Date of Patent: October 26, 2004Assignees: Hitachi High-Technologies Corporation, Canon Kabushiki KaishaInventors: Yasunari Sohda, Hiroya Ohta, Osamu Kamimura, Susumu Gotoh
-
Publication number: 20040129898Abstract: There is provided an electron beam wiring technique which can correct deflection for a micro field used in electron beam writing equipment with high precision.Type: ApplicationFiled: July 30, 2003Publication date: July 8, 2004Inventors: Yasunari Sohda, Hiroya Ohta, Osamu Kamimura, Susumu Gotoh
-
Publication number: 20040119026Abstract: There is provided an electron beam exposure technique which permits optical adjustment in an electron optics system using a doublet lens necessary for large field projection.Type: ApplicationFiled: August 6, 2003Publication date: June 24, 2004Inventors: Yasunari Sohda, Osamu Kamimura, Hiroya Ohta, Susumu Gotoh
-
Patent number: 6323499Abstract: An electron beam exposure apparatus which minimizes the influence of the space charge effect and aberrations of a reduction electron optical system, and simultaneously, increases the exposure area which can be exposed at once, thereby increasing the throughput. An electron beam exposure apparatus having a source for emitting an electron beam and a reduction electron optical system for reducing and projecting, on a target exposure surface, an image of the source, includes a correction electron optical system which is arranged between the source and the reduction electron optical system to form a plurality of intermediate images of the source along a direction perpendicular to the optical axis of the reduction electron optical system, and corrects in advance aberrations generated when the intermediate images are reduced and projected on the target exposure surface by the reduction electron optical system.Type: GrantFiled: June 16, 2000Date of Patent: November 27, 2001Assignee: Canon Kabushiki KaishaInventors: Masato Muraki, Susumu Gotoh
-
Patent number: 6166387Abstract: An electron beam exposure apparatus which minimizes the influence of the space charge effect and aberrations of a reduction electron optical system, and simultaneously, increases the exposure area which can be exposed at once, thereby increasing the throughput. An electron beam exposure apparatus having a source for emitting an electron beam and a reduction electron optical system for reducing and projecting, on a target exposure surface, an image of the source, includes a correction electron optical system which is arranged between the source and the reduction electron optical system to form a plurality of intermediate images of the source along a direction perpendicular to the optical axis of the reduction electron optical system, and corrects in advance aberrations generated when the intermediate images are reduced and projected on the target exposure surface by the reduction electron optical system.Type: GrantFiled: May 17, 1999Date of Patent: December 26, 2000Assignee: Canon Kabushiki KaishaInventors: Masato Muraki, Susumu Gotoh
-
Patent number: 5973332Abstract: An electron beam exposure apparatus which minimizes the influence of the space charge effect and aberrations of a reduction electron optical system, and simultaneously, increases the exposure area which can be exposed at once, thereby increasing the throughput. An electron beam exposure apparatus having a source for emitting an electron beam and a reduction electron optical system for reducing and projecting, on a target exposure surface, an image of the source, includes a correction electron optical system which is arranged between the source and the reduction electron optical system to form a plurality of intermediate images of the source along a direction perpendicular to the optical axis of the reduction electron optical system, and corrects in advance aberrations generated when the intermediate images are reduced and projected on the target exposure surface by the reduction electron optical system.Type: GrantFiled: June 17, 1998Date of Patent: October 26, 1999Assignee: Canon Kabushiki KaishaInventors: Masato Muraki, Susumu Gotoh
-
Patent number: 5834783Abstract: An electron beam exposure apparatus which minimizes the influence of the space charge effect and aberrations of a reduction electron optical system, and simultaneously, increases the exposure area which can be exposed at once, thereby increasing the throughput. An electron beam exposure apparatus having a source for emitting an electron beam and a reduction electron optical system for reducing and projecting, on a target exposure surface, an image of the source, includes a correction electron optical system which is arranged between the source and the reduction electron optical system to form a plurality of intermediate images of the source along a direction perpendicular to the optical axis of the reduction electron optical system, and corrects in advance aberrations generated when the intermediate images are reduced and projected on the target exposure surface by the reduction electron optical system.Type: GrantFiled: March 4, 1997Date of Patent: November 10, 1998Assignee: Canon Kabushiki KaishaInventors: Masato Muraki, Susumu Gotoh
-
Patent number: 5164974Abstract: An X-ray exposure apparatus wherein a member sensitive to X-ray is exposed to a pattern formed on a mask with the X-rays, includes an X-ray source for emitting X-rays, an irradiation chamber for accommodating the mask and the sensitive member and exposing them to the X-rays emitted by the X-ray source within the chamber and a vacuum pump for evacuating the chamber to effect the exposure operation in a vacuum.Type: GrantFiled: June 12, 1991Date of Patent: November 17, 1992Assignee: Canon Kabushiki KaishaInventors: Takao Kariya, Yasuo Kawai, Masahiko Okunuki, Susumu Gotoh