Abstract: What provided is a biosensor including: a substrate having a surface with first and second regions adjacent each other; a magnetoresistance effect element disposed on the first region; a soft magnetic thin film on the second region; a protective film disposed on both the first region and the second region, covering a surface of the soft magnetic thin film, and disposed on the top part of the second region and contains an affinity substance recognizing the biomolecule on the outer surface of the second region exclusively; and an MR cover film disposed on at least the top part of the first region, disposed on the protective film above the magnetoresistance effect element, and being free of the affinity substance, wherein the soft magnetic thin film transmits an in-plane component of a stray magnetic field of magnetic beads to the magnetoresistance effect element.

Abstract: A chemical sensor that enables high detection accuracy that includes a soft-magnetic-material film, a magnetoresistance-effect element, a first film disposed over the soft-magnetic-material film, and a second film disposed over the magnetoresistance-effect element, wherein, when viewed from a direction perpendicular to the film surface of the soft-magnetic-material film, the soft-magnetic-material film is disposed at least partially so as not to overlap the magnetoresistance-effect element; when viewed from the direction perpendicular to the film surface of the soft-magnetic-material film, the magnetoresistance-effect element is disposed at least partially so as not to overlap the soft-magnetic-material film; and the second film has higher solubility in a specific liquid than the first film.

Abstract: A chemical sensor that enables high detection accuracy. A chemical sensor includes a substrate, a magnetoresistance-effect element disposed over the substrate, a first film disposed over the magnetoresistance-effect element, and a second film disposed in a region in the vicinity of the magnetoresistance-effect element or over a region in the vicinity of the magnetoresistance-effect element, wherein the second film has higher solubility in a specific liquid than the first film.

Abstract: To provide a chemical sensor that enables high detection accuracy. A chemical sensor includes a substrate, two or more magnetoresistance-effect elements disposed side by side in a substrate in-plane direction over the substrate, a first film disposed over a region between the magnetoresistance-effect elements adjacent to each other, and a second film disposed over the magnetoresistance-effect elements, wherein the second film has higher solubility in a specific liquid than the first film.

Abstract: A sensor includes: a substrate; a first magnetoresistance element and a second magnetoresistance element, each of which is a magnetoresistance element whose resistance value measured changes depending on a direction of an input magnetic field; and a soft magnetic thin film disposed adjacent to the first and second magnetoresistance elements wherein one of the first and second magnetoresistance elements is positioned on one of end sides of the soft magnetic thin film and other of the first and second magnetoresistance elements is positioned on other of the end sides of the soft magnetic thin film in a plan view in a direction perpendicular to a film surface of the soft magnetic thin film.

Abstract: A biosensor includes a substrate having a surface in which a first region and a second region disposed adjacent to the first region are formed; a magnetoresistance effect element that is disposed on at least the first region and is configured such that a resistance value detected according to an input magnetic field varies; a protective film that is disposed on both the first region and the second region and covers a surface of the magnetoresistance effect element, and is disposed on the top part of the second region and contains an affinity substance that allows recognition of the biomolecules on the outer surface only on the second region; and an adsorption prevention film that is disposed on at least the top part of the first region and is substantially free of the affinity substance, wherein the protective film and the adsorption prevention film are made of different materials.

Abstract: What provided is a biosensor including: a substrate having a surface with first and second regions adjacent to each other; a magnetoresistance effect element that is disposed at least on the first region and is configured for a detected resistance value to be changed based on an input magnetic field; a protective film that is disposed on both the first region and the second region, covers a surface of the magnetoresistance effect element, is disposed on the top part of the first region and contains an affinity substance capable of recognizing the biomolecule on the outer surface of the first region exclusively; and an adsorption prevention film that is disposed on at least the top part of the second region and is substantially free of the affinity substance, wherein the protective film and the adsorption prevention film are made of different materials.

Abstract: A chemical sensor that enables high detection accuracy that includes a soft-magnetic-material film, a magnetoresistance-effect element, a first film disposed over the soft-magnetic-material film, and a second film disposed over the magnetoresistance-effect element, wherein, when viewed from a direction perpendicular to the film surface of the soft-magnetic-material film, the soft-magnetic-material film is disposed at least partially so as not to overlap the magnetoresistance-effect element; when viewed from the direction perpendicular to the film surface of the soft-magnetic-material film, the magnetoresistance-effect element is disposed at least partially so as not to overlap the soft-magnetic-material film; and the second film has higher solubility in a specific liquid than the first film.

Abstract: To provide a chemical sensor that enables high detection accuracy. A chemical sensor includes a substrate, two or more magnetoresistance-effect elements disposed side by side in a substrate in-plane direction over the substrate, a first film disposed over a region between the magnetoresistance-effect elements adjacent to each other, and a second film disposed over the magnetoresistance-effect elements, wherein the second film has higher solubility in a specific liquid than the first film.

Abstract: A chemical sensor that enables high detection accuracy. A chemical sensor includes a substrate, a magnetoresistance-effect element disposed over the substrate, a first film disposed over the magnetoresistance-effect element, and a second film disposed in a region in the vicinity of the magnetoresistance-effect element or over a region in the vicinity of the magnetoresistance-effect element, wherein the second film has higher solubility in a specific liquid than the first film.

Abstract: What provided is a biosensor including: a substrate having a surface with first and second regions adjacent each other; a magnetoresistance effect element disposed on the first region; a soft magnetic thin film on the second region; a protective film disposed on both the first region and the second region, covering a surface of the soft magnetic thin film, and disposed on the top part of the second region and contains an affinity substance recognizing the biomolecule on the outer surface of the second region exclusively; and an MR cover film disposed on at least the top part of the first region, disposed on the protective film above the magnetoresistance effect element, and being free of the affinity substance, wherein the soft magnetic thin film transmits an in-plane component of a stray magnetic field of magnetic beads to the magnetoresistance effect element.

Abstract: A sensor includes: a substrate; a first magnetoresistance element and a second magnetoresistance element, each of which is a magnetoresistance element whose resistance value measured changes depending on a direction of an input magnetic field; and a soft magnetic thin film disposed adjacent to the first and second magnetoresistance elements wherein one of the first and second magnetoresistance elements is positioned on one of end sides of the soft magnetic thin film and other of the first and second magnetoresistance elements is positioned on other of the end sides of the soft magnetic thin film in a plan view in a direction perpendicular to a film surface of the soft magnetic thin film.

Abstract: A current sensor includes first to fourth magneto-resistive elements each having a resistance value; and a compensation current line applying a compensation magnetic field to the magneto-resistive elements. A bridge circuit is formed by the magneto-resistive elements. Resistance values of the first and third magneto-resistive elements change together in one increasing/decreasing direction. Resistance values of the second and fourth magneto-resistive elements change together in the other increasing/decreasing direction. The compensation current is generated by a potential difference between the first and second junctions in response to application of voltage between the third and fourth junctions. The compensation current line includes first to fourth line portions. Each line portion extends in the same direction as the extending direction of the magneto-resistive elements, overlaps the corresponding magneto-resistive elements, and. The current-to-be-detected is detected based on the compensation current.

Abstract: A signal transmission device includes: an input signal conductor in which an input signal current flows and thereby generating an input signal magnetic field; a magnetically-biasing conductor in which a biasing current flows and thereby generating a biasing magnetic field; and one or more magnetoresistive elements in each of which a sensing current flows and thereby generating a self-biasing magnetic field, and each including a magnetization free layer having a magnetization direction which varies in response to the input signal magnetic field, the biasing magnetic field, and the self-biasing magnetic field. Each of the biasing magnetic field and the self-biasing magnetic field is applied to the magnetization free layer in a same direction to each other.

Abstract: A current sensor includes first to fourth magneto-resistive elements each having a resistance value; and a compensation current line applying a compensation magnetic field to the magneto-resistive elements. A bridge circuit is formed by the magneto-resistive elements. Resistance values of the first and third magneto-resistive elements change together in one increasing/decreasing direction. Resistance values of the second and fourth magneto-resistive elements change together in the other increasing/decreasing direction. The compensation current is generated by a potential difference between the first and second junctions in response to application of voltage between the third and fourth junctions. The compensation current line includes first to fourth line portions. Each line portion extends in the same direction as the extending direction of the magneto-resistive elements, overlaps the corresponding magneto-resistive elements, and. The current-to-be-detected is detected based on the compensation current.

Abstract: The magnetic sensor comprises a spin-valve GMR including a free layer having an elongated form as seen in a laminating direction and a permanent magnet layer having an elongated form as seen in the laminating direction. The permanent magnet layer is arranged in parallel with the free layer.

Abstract: A magnetic coupler having higher response is provided. The magnetic coupler includes a thin film coil wound in a first layer; a first MR element being disposed in a second layer, and detecting an induced magnetic field generated by a signal current flowing through the thin film coil; and yokes being disposed close to the first MR element, and including a soft magnetic material. The first MR element is disposed in a position corresponding to a linear region of the thin film coil in a stacking direction. The yokes are disposed at both of an inner turn side and an outer turn side of the thin film coil in a manner of interposing the first MR element in the second layer. Thus, reduction in intensity of the induced magnetic field is suppressed, and intensity distribution of the induced magnetic field becomes flatter.

Abstract: A magnetic memory is less susceptible to external magnetic fields and, thus, to writing errors and other adverse effects caused by external magnetic fields. In the magnetic memory, a magnetoresistive element is arranged adjacent to a part of a conductor line. A shield structure is also arranged to shield the magnetoresistive element against external magnetic fields generated by factors other then the part of the line.

Abstract: In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm2), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t<J/(Hc·Ms).

Abstract: A signal transmission device includes: an input signal conductor in which an input signal current flows and thereby generating an input signal magnetic field; a magnetically-biasing conductor in which a biasing current flows and thereby generating a biasing magnetic field; and one or more magnetoresistive elements in each of which a sensing current flows and thereby generating a self-biasing magnetic field, and each including a magnetization free layer having a magnetization direction which varies in response to the input signal magnetic field, the biasing magnetic field, and the self-biasing magnetic field. Each of the biasing magnetic field and the self-biasing magnetic field is applied to the magnetization free layer in a same direction to each other.