Abstract: A fuel cell system includes: a plurality of fuel cell stacks; an oxidizing gas supply unit including a turbo compressor that supplies an oxidizing gas to each of the fuel cell stacks; a cooling unit that cools each of the fuel cell stacks; and a control device that determines, according to the requested output, a requested number of fuel cell stacks to be operated out of the fuel cell stacks, a target supply pressure of the oxidizing gas and a target supply flow rate of the oxidizing gas that are to be sent as a command to the oxidizing gas supply unit, and a target cooling temperature of the fuel cell stacks that is to be sent as a command to the cooling unit. The control device reduces the target cooling temperature when reducing the requested number of fuel cell stacks to be operated.

Abstract: The fuel cell system includes a plurality of fuel cell stacks, an oxidant gas supply unit having a turbo compressor that supplies oxidant gas to each of the fuel cell stacks, and a control device that determines a required operation number for the fuel cell stacks and a target supply pressure and a target supply flow rate of oxidant gas to be commanded to the oxidant gas supply unit according to a required output. The oxidant gas supply unit has an adjustment mechanism that adjusts a supply rate, which is a ratio of a supply flow rate supplied to the plurality of fuel cell stacks, with respect to a discharge flow rate of the turbo compressor. The control device monitors the pressure ratio in the turbo compressor and controls the adjustment mechanism to reduce the supply rate when the pressure ratio exceeds a predetermined threshold.

Abstract: According to one embodiment, a magnetic memory includes: a magnet configured to store data and shift the data from a first area to a second area by domain wall movement caused by a shift operation; an interconnect spaced apart from the magnet and configured to apply a write field to the magnet at a time of a write operation; and a control circuit configured to cause a shift current for shifting the data to flow in the magnet and to cause a write current for generating the write field to flow in the interconnect, wherein the write current includes a first pulse supplied to the interconnect and a second pulse supplied to the interconnect after the first pulse, and a pulse width of the second pulse is smaller than a pulse width of the first pulse.

Abstract: A vehicle designed to increase a maximum drive torque transmitted from an engine to drive wheels. The vehicle comprises: an input member to which a torque is delivered from the engine; an output member connected to drive wheels; a reaction mechanism that establishes a reaction torque; and a differential mechanism. A differential mechanism comprises: an input element connected to the input member; an output element connected to the output member; and a reaction element connected to the reaction mechanism. A torque converter is arranged between the input member and the output member.

Abstract: A magnetic memory includes: a first and second wirings; an insulator portion; a magnetic member including: a first portion electrically connected to the first wiring; a second portion electrically connected to the second wiring; and a third portion disposed between the first and second portions, the magnetic member extending in a first direction from the first portion toward the second portion and surrounding the insulator portion, and in a cross-section parallel to the first direction and including part of the magnetic member and part of the insulator portion, a curvature of the first portion being smaller than a curvature of the third portion, a length of the first portion in the first direction being greater than half a length of the third portion in the first direction; and a control circuit electrically connected to the first and second wirings.

Abstract: A light source device includes a semiconductor light source that radiates light at a light quantity according to an applied current, a circuit that determines a current instruction value based on control information, first and second drive units, each of the units that is connected to the semiconductor light source and the circuit, and is capable of outputting, to the semiconductor light source, a current having magnitude corresponding to the current instruction value. The control information is set based on brightness of an image captured by an imaging element. When one of the first and second drive units is switched to the other, the circuit causes the other to start the current output after an elapse of a predetermined stop time period having a length at a predetermined ratio or less to a frame rate on the imaging element since a stop of the current output from the one.

Abstract: A magnetic memory includes a plurality of cylindrical magnetic members each extending along a first direction and having a first end portion and a second end portion; and a magnetoresistive element that includes: a magnetization variable layer with a variable magnetization direction, a magnetization fixed layer with a fixed magnetization direction, and a non-magnetic layer between the magnetization variable layer and the magnetization fixed layer. When viewed in the first direction, the magnetoresistive element overlaps a part of the first end portion of one of the magnetic members. The magnetization direction of the magnetization variable layer intersects with the magnetization direction of the magnetization fixed layer at an angle larger than 0 degrees and smaller than 180 degrees.

Abstract: A storage device includes: a memory unit and a first pillar. The first pillar includes: a first region having a third portion between a first and a second portion respectively having a first and a second maximum diameter, and having a first minimum diameter, the first and second portions defining a first distance; a second region having a sixth portion between a fourth and a fifth portion respectively having a third and a fourth maximum diameter, and having a second minimum diameter, the fourth and fifth portions defining a second distance; and a third region between the first and second regions, having a ninth portion between a seventh and an eighth portion respectively having a fifth and a sixth maximum diameter, and having a third minimum diameter, the seventh and eighth portions defining a third distance shorter than each of the first and second distances.

Abstract: According to one embodiment, a magnetic memory includes first magnetic members extending in a first direction, first wirings extending in a second direction and spaced from each other in a third direction, and a second magnetic member. The second magnetic member has a first portion above the first wirings, a second portion extending in the second direction between adjacent first wirings, a third portion below the plurality of first wirings, and a fourth portion with a part inside an upper end portion of a first magnetic member. A third wiring extends in the third direction and is connected to lower end portions of first magnetic members.

Abstract: A vehicle designed to increase a maximum drive torque transmitted from an engine to drive wheels. The vehicle comprises: an input member to which a torque is delivered from the engine; an output member connected to drive wheels; a reaction mechanism that establishes a reaction torque; and a differential mechanism. A differential mechanism comprises: an input element connected to the input member; an output element connected to the output member; and a reaction element connected to the reaction mechanism. A torque converter is arranged between the input member and the output member.

Abstract: A memory includes: a magnet including a first and second portions adjacent in a first direction. The first portion has a first dimension in a second direction at a first position at which a dimension of the magnet in the second direction is maximum, the second direction perpendicular to the first direction, the second portion has a second dimension in the second direction at a second position at which a dimension of the magnet in the second direction is minimum, the second dimension smaller than the first dimension, the first portion is continuous to the second portion via a third position between the first and second positions, a curve corresponding to an outer of the magnet extends between the first and third positions, and the curve passes through a side closer to the central axis of the magnet than a straight line connecting the first and second positions.

Abstract: An engine includes a cylinder block including a cylinder wall, a cylinder liner, and a water jacket. The engine further includes a heater including an induction coil disposed in the water jacket. The heater is configured to heat the cylinder wall by generating an eddy current in the cylinder wall by an alternating current flowing through the induction coil.

Abstract: According to one embodiment, a magnetic memory includes a first magnetic member extending along a first direction. First and second wires extend along a second direction. The first magnetic member is located between the first and second wirings in plan view from the first direction. A second magnetic member has a first portion above the first and second wirings, a second portion between the first and second wirings, and a third portion below the first and second wirings. At least one of the first portion or the third portion of the second magnetic member has a lower saturation magnetization than the second portion.

Abstract: An endoscope device includes a processor configured to calculate light source control information based on first information regarding a scope and second information regarding a light source device, and to control a light source of the light source device based on the light source control information. The second information includes a ratio of an amount of light emitted from a distal end of a reference scope to an amount of light emitted from the light source device to the reference scope.

Abstract: A semiconductor memory device includes a first wiring, a second wiring, a memory pillar, a semiconductor layer, and a contact plug. The second wiring is provided above the first wiring in a first direction. The memory pillar penetrating at least one of a portion of the first wiring or a portion of the second wiring in the first direction. The semiconductor layer extends in the first direction provided in the memory pillar. The contact plug contains a metal and has a lower surface provided in the memory pillar, and the lower surface is in contact with the semiconductor layer below an upper surface of the second wiring.

Abstract: An electric vehicle according to an example of the present application includes a battery, a regenerative brake, a friction brake, and a controller. The regenerative brake imparts regenerative braking torque to drive wheels. The friction brake imparts frictional braking torque to the drive wheels and non-drive wheels. The controller execute a slip control when the slip of the drive wheels is expected. The controller controls, during the execution of slip control, the regenerative and the friction brakes so that; the total of the frictional and the regenerative braking torque imparted to the drive wheels is less than or equal to upper limit torque set within a range that the drive wheels do not slip; the power of the regenerative power generation is not to exceed an acceptable charging power set according to a state of charge of the battery; and the regenerative braking torque is smaller than the regenerative braking torque before the start of the slip control.

Abstract: According to one embodiment, a semiconductor memory device comprises a substrate, a first conductive layer, and a second conductive layer arranged in this order in a first direction and separated from each other, a first semiconductor film extending in the first direction, intersecting the first conductive layer, and being in contact with the second conductive layer, and a first charge storage film arranged between the first semiconductor film and the first conductive layer, and being in contact with the second conductive layer, wherein the first semiconductor film includes a first portion formed of an n-type semiconductor at approximately a same height as the first conductive layer.

Abstract: A magnetic memory according to en embodiment includes: a first and second wirings; an insulator portion; a magnetic member including: a first portion electrically connected to the first wiring; a second portion electrically connected to the second wiring; and a third portion disposed between the first and second portions, the magnetic member extending in a first direction from the first portion toward the second portion and surrounding the insulator portion, and in a cross-section parallel to the first direction and including part of the magnetic member and part of the insulator portion, a curvature of the first portion being smaller than a curvature of the third portion, a length of the first portion in the first direction being greater than half a length of the third portion in the first direction; and a control circuit electrically connected to the first and second wirings.

Abstract: A storage device includes: a memory unit and a first pillar. The first pillar includes: a first region having a third portion between a first and a second portion respectively having a first and a second maximum diameter, and having a first minimum diameter, the first and second portions defining a first distance; a second region having a sixth portion between a fourth and a fifth portion respectively having a third and a fourth maximum diameter, and having a second minimum diameter, the fourth and fifth portions defining a second distance; and a third region between the first and second regions, having a ninth portion between a seventh and an eighth portion respectively having a fifth and a sixth maximum diameter, and having a third minimum diameter, the seventh and eighth portions defining a third distance shorter than each of the first and second distances.

Abstract: A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.