Abstract: Provided are an imaging apparatus and an electronic device in which even if an image sensor is mounted on a wiring board, the wiring board on which the image sensor is mounted can be assembled to a housing with high accuracy. Provided is an imaging apparatus including a sensor chip and a wiring board having a glass base material. The imaging apparatus is joined to at least one of the sensor chip or the wiring board via a bump unit including a plurality of bumps, and each of the plurality of bumps is formed by conductive members having substantially the same composition.

Abstract: Provided is a semiconductor device enabling the flatness of a glass substrate to be maintained and enabling the end portion of the glass substrate to be sufficiently protected. A semiconductor device according to the present disclosure includes a glass substrate that includes a first surface, a second surface provided on the opposite side of the first surface, and a first side surface provided between the first surface and the second surface, a wiring that is provided on the first and second surfaces, a metal film that covers the first side surface, and a frame that is provided further on the outer side than the metal film, and that is bonded to the metal film at the first side surfaces.

Abstract: The present technology relates to a semiconductor device capable of providing a heat-stable optical system, and an electronic apparatus. A semiconductor device is provided, and the semiconductor device includes a sensor and a holding substrate that holds the sensor. In the semiconductor device, (EI×tI)+(ES×tS)>30 and 1.5<CTEI<4.5 are satisfied, where ES (GPa) represents a Young's modulus of the sensor, tS (mm) represents a thickness of the sensor, CTEI (ppm/K) represents a linear expansion coefficient of the holding substrate, EI (GPa) represents a Young's modulus of the holding substrate, and tI (mm) represents a thickness of the holding substrate. The present technology can be applied to a semiconductor package housing an image sensor, for example.

Abstract: Provided are an imaging apparatus and an electronic device in which even if an image sensor is mounted on a wiring board, the wiring board on which the image sensor is mounted can be assembled to a housing with high accuracy. Provided is an imaging apparatus including a sensor chip and a wiring board having a glass base material. The imaging apparatus is joined to at least one of the sensor chip or the wiring board via a bump unit including a plurality of bumps, and each of the plurality of bumps is formed by conductive members having substantially the same composition.

Abstract: The present technology relates to a semiconductor device and a manufacturing method, an imaging device, and an electronic apparatus that enable component mounting with high flatness at low cost. A semiconductor device includes: a core substrate: a multilayer wiring layer that includes a plurality of conductive layers and a plurality of insulating layers, and is formed on a surface of the core substrate; an opening that is formed in the multilayer wiring layer, and penetrates through at least the outermost insulating layer farthest from the core substrate among the plurality of insulating layers; and a mount element connected to a pad portion provided on a predetermined conductive layer located closer to the core substrate than the outermost conductive layer farthest from the core substrate among the plurality of conductive layers in the opening. The present technology can be applied to imaging devices.

Abstract: The present technology relates to a semiconductor device providing an image sensor package capable of coping with an increase in the number of I/Os of an image sensor, a manufacturing method thereof, and an electronic apparatus. The semiconductor device includes an image sensor, a glass substrate, a wiring layer, and external terminals. In the image sensor, photoelectric conversion elements are formed on a semiconductor substrate. The glass substrate is arranged on a first main surface side of the image sensor. The wiring layer is formed on a second main surface side opposite to the first main surface. Each of the external terminals outputs a signal of the image sensor. Metal wiring of the wiring layer extends to an outer peripheral portion of the image sensor and is connected to the external terminals. The present technology can be applied to, for example, an image sensor package and the like.

Abstract: The present technology relates to a semiconductor device capable of providing a heat-stable optical system, and an electronic apparatus. A semiconductor device is provided, and the semiconductor device includes a sensor and a holding substrate that holds the sensor. In the semiconductor device, (EI×tI)+(ES×tS)>30 and 1.5<CTEI<4.5 are satisfied, where ES (GPa) represents a Young's modulus of the sensor, tS (mm) represents a thickness of the sensor, CTEI (ppm/K) represents a linear expansion coefficient of the holding substrate, EI (GPa) represents a Young's modulus of the holding substrate, and tI (mm) represents a thickness of the holding substrate. The present technology can be applied to a semiconductor package housing an image sensor, for example.

Abstract: The present technology relates to a semiconductor device and a manufacturing method, an imaging device, and an electronic apparatus that enable component mounting with high flatness at low cost. A semiconductor device includes: a core substrate: a multilayer wiring layer that includes a plurality of conductive layers and a plurality of insulating layers, and is formed on a surface of the core substrate; an opening that is formed in the multilayer wiring layer, and penetrates through at least the outermost insulating layer farthest from the core substrate among the plurality of insulating layers; and a mount element connected to a pad portion provided on a predetermined conductive layer located closer to the core substrate than the outermost conductive layer farthest from the core substrate among the plurality of conductive layers in the opening. The present technology can be applied to imaging devices.

Abstract: The present technology relates to a semiconductor device providing an image sensor package capable of coping with an increase in the number of I/Os of an image sensor, a manufacturing method thereof, and an electronic apparatus. The semiconductor device includes an image sensor, a glass substrate, a wiring layer, and external terminals. In the image sensor, photoelectric conversion elements are formed on a semiconductor substrate. The glass substrate is arranged on a first main surface side of the image sensor. The wiring layer is formed on a second main surface side opposite to the first main surface. Each of the external terminals outputs a signal of the image sensor. Metal wiring of the wiring layer extends to an outer peripheral portion of the image sensor and is connected to the external terminals. The present technology can be applied to, for example, an image sensor package and the like.