Abstract: A monitoring camera includes an imaging unit that generates image data; a division processing unit that divides the image into a processible image and a target image when a processing load of image processing to be executed on the image is more than a predetermined load; an image processing unit that executes the image processing on the processible image; and a transmitting unit that transmits a first image processing result that is a result of the image processing executed on the processible image and target image data. The terminal includes: a communication unit that receives the first image processing result and the target image data; an image processing unit that executes image processing on the target image indicated by the target image data; and a managing unit that acquires one result by integrating the first image processing result and a second image processing result.

Abstract: A memory includes: a magnet including a first and second portions adjacent in a first direction. The first portion has a first dimension in a second direction at a first position at which a dimension of the magnet in the second direction is maximum, the second direction perpendicular to the first direction, the second portion has a second dimension in the second direction at a second position at which a dimension of the magnet in the second direction is minimum, the second dimension smaller than the first dimension, the first portion is continuous to the second portion via a third position between the first and second positions, a curve corresponding to an outer of the magnet extends between the first and third positions, and the curve passes through a side closer to the central axis of the magnet than a straight line connecting the first and second positions.

Abstract: An angle computing device includes a first computing unit configured to compute a rotation angle of a motor based on a detection signal from a detection unit that detects the rotation angle of the motor, and a second computing unit configured to compute turn number information indicating the number of turns of the motor as information used to compute the rotation angle based on the detection signal from the detection unit. When a start switch of a vehicle is off, the first computing unit stops and the second computing unit computes the turn number information. When the start switch is on, the first computing unit computes the rotation angle using the turn number information that is computed by the second computing unit while the start switch is off.

Abstract: A motor unit includes a motor; and a control board configured to execute a control to drive the motor. The control board includes a first control board and a second control board. The first control board is provided such that a mounting space for at least one electronic component perpendicularly intersects with an extension line extending from a shaft end part of a motor shaft and extends along a shaft radial direction so as to allow the at least one electronic component to be disposed along the shaft radial direction. The second control board is provided such that a mounting space for at least one electronic component extends along a shaft length direction so as to allow the at least one electronic component to be disposed along the shaft length direction. The motor and the control board are unitized.

Abstract: A motor drive circuit includes a transistor that is connected in parallel to a first voltage divider resistance that forms a voltage divider circuit between the source and the gate of a second interrupting MOSFET. If a reverse connection of the battery occurs, a compensation drive circuit turns on the transistor using an output from the battery so that the source and the gate of the second interrupting MOSFET are short-circuited. Thus, formation of a closed circuit that includes the battery and the inverter circuit is prevented. As a result, it is possible to prevent both terminals of the battery from being short-circuited.

Abstract: A semiconductor light-emitting device 10 has a semiconductor chip 12 for emitting light having a wavelength in blue to ultraviolet regions, and a sealing portion 16 formed in at least a partial region on a passage path on which the light is passed. The sealing portion 16 includes a sealing material 16d which is a composite material including a matrix material 16a made of a resin, nano-particles 16b made of an inorganic material which are distributed in the matrix material 16a, the nano-particle 16b having an effective particle size which is ¼ or less of the wavelength of the light in the matrix material 16a, and a fluorescent material 16c.

Abstract: A semiconductor light-emitting device 10 has a semiconductor chip 12 for emitting light having a wavelength in blue to ultraviolet regions, and a sealing portion 16 formed in at least a partial region on a passage path on which the light is passed. The sealing portion 16 includes a sealing material 16d which is a composite material including a matrix material 16a made of a resin, nano-particles 16b made of an inorganic material which are distributed in the matrix material 16a, the nano-particle 16b having an effective particle size which is ¼ or less of the wavelength of the light in the matrix material 16a, and a fluorescent material 16c.

Abstract: A motor drive circuit includes a transistor that is connected in parallel to a first voltage divider resistance that forms a voltage divider circuit between the source and the gate of a second interrupting MOSFET. If a reverse connection of the battery occurs, a compensation drive circuit turns on the transistor using an output from the battery so that the source and the gate of the second interrupting MOSFET are short-circuited. Thus, formation of a closed circuit that includes the battery and the inverter circuit is prevented. As a result, it is possible to prevent both terminals of the battery from being short-circuited.

Abstract: A semiconductor light-emitting device 10 has a semiconductor chip 12 for emitting light having a wavelength in blue to ultraviolet regions, and a sealing portion 16 formed in at least a partial region on a passage path on which the light is passed. The sealing portion 16 includes a sealing material 16d which is a composite material including a matrix material 16a made of a resin, nano-particles 16b made of an inorganic material which are distributed in the matrix material 16a, the nano-particle 16b having an effective particle size which is ¼ or less of the wavelength of the light in the matrix material 16a, and a fluorescent material 16c.

Abstract: It is an object of the present invention to achieve both security and convenience in authentication of authentication targets, which is required in various situations. An authentication system of the present invention includes: a receiving unit operable to receive first ID information from a first device, and receive second ID information from a second device; and an authority information generating unit operable to generate authority information having an authority range varying according to the number of pieces of the ID information received by the receiving unit. Accordingly, the range of authority that can be executed can be limited according to the number of pieces of authenticated ID information, and thus both security and convenience can be achieved in authentication of authentication targets, which is required in various situations.

Abstract: The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.

Abstract: A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.

Abstract: The dual wavelength semiconductor laser source for an optical pickup includes: two semiconductor laser elements outputting laser beams having oscillating wavelengths different from each other; and a multiplexing waveguide, formed inside of a photonic crystal having a photonic band gap, having one output end outputting laser light at one end surface and two input ends at the other end surfaces. Output beams of the two semiconductor laser elements are coupled to the respective two input ends of the multiplexing waveguide and the two beams are outputted from the one output end of the multiplexing waveguide.

Abstract: A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.

Abstract: A drive power transmission control device is provided with an electromagnetic drive power transmission device and an ECU for controlling the application of electric current to an electromagnetic coil of the drive power transmission device. The ECU is bodily provided on a casing of the electromagnetic type drive power transmission device through at least one support member 50. The electronic control device is fixedly supported on an outer wall of the casing with a space between the electronic control device and the casing, such that cooling air can flow between the outer wall of the casing and the electronic control device.

Abstract: The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.

Abstract: The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.

Abstract: The dual wavelength semiconductor laser source for an optical pickup includes: two semiconductor laser elements outputting laser beams having oscillating wavelengths different from each other; and a multiplexing waveguide, formed inside of a photonic crystal having a photonic band gap, having one output end outputting laser light at one end surface and two input ends at the other end surfaces. Output beams of the two semiconductor laser elements are coupled to the respective two input ends of the multiplexing waveguide and the two beams are outputted from the one output end of the multiplexing waveguide.

Abstract: The dual wavelength semiconductor laser source for an optical pickup includes: two semiconductor laser elements outputting laser beams having oscillating wavelengths different from each other; and a multiplexing waveguide, formed inside of a photonic crystal having a photonic band gap, having one output end outputting laser light at one end surface and two input ends at the other end surfaces. Output beams of the two semiconductor laser elements are coupled to the respective two input ends of the multiplexing waveguide and the two beams are outputted from the one output end of the multiplexing waveguide.

Abstract: A drive power transmission control device in a first embodiment is provided with an electromagnetic type drive power transmission device and an electronic control device (ECU) for controlling the application of electric current to an electromagnetic coil of the electromagnetic type drive power transmission device. The ECU is bodily provided on a casing of the electromagnetic type drive power transmission device through at least one support member 50. Thus, nonuniformity or deflection in mechanical quality of the electromagnetic type drive power transmission device and nonuniformity or deflection in electrical quality of the electronic control device can be adjusted as a whole, and the drive power transmission control device is lightened in weight. A drive power transmission control device in a second embodiment is provided with an electronic control device for controlling drive power transmitted by a drive power transmission device from a drive power source to plural wheel.