Abstract: A method includes: determining height Z1 of a focus by an optical microscope having autofocus function which uses irradiation light of wavelength ?0 to adjust the focus; determining a wavelength ?1 of irradiation light used for obtaining observation image of second thin film; obtaining observation image of second thin film by using irradiation light of the wavelength ?1, while altering heights of the focus with the Z1 as reference point; calculating standard deviation of reflected-light intensity distribution within the observation image, obtaining height Z2 of the focus corresponding to a peak position where standard deviation is greatest, and calculating a difference ?Z between Z1 and Z2; correcting the autofocus function with ?Z as a correction value; and using the corrected autofocus function to adjust the focus, obtaining the observation image of the second thin film, and calculating the film thickness distribution from the reflected-light intensity distribution within the observation image.

Abstract: A method includes: determining height Z1 of a focus by an optical microscope having autofocus function which uses irradiation light of wavelength ?0 to adjust the focus; determining a wavelength ?1 of irradiation light used for obtaining observation image of second thin film; obtaining observation image of second thin film by using irradiation light of the wavelength ?1, while altering heights of the focus with the Z1 as reference point; calculating standard deviation of reflected-light intensity distribution within the observation image, obtaining height Z2 of the focus corresponding to a peak position where standard deviation is greatest, and calculating a difference ?Z between Z1 and Z2; correcting the autofocus function with ?Z as a correction value; and using the corrected autofocus function to adjust the focus, obtaining the observation image of the second thin film, and calculating the film thickness distribution from the reflected-light intensity distribution within the observation image.

Abstract: A method for manufacturing an SOI wafer having SOI layer includes a thinning step to adjust SOI film thickness of the SOI wafer, including the steps of: (A1) measuring the SOI film thickness of the SOI wafer having the SOI layer before the thinning step; (A2) determining rotational position of the SOI wafer in the thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness and previously determined radial stock removal distribution in the thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position; and (A3) thinning the SOI layer of the rotated SOI wafer. The method for manufacturing the SOI wafer can produce an SOI wafer with an excellent radial film thickness uniformity of the SOI layer after the thinning step.

Abstract: A method for manufacturing an SOI wafer having SOI layer includes a thinning step to adjust SOI film thickness of the SOI wafer, including the steps of: (A1) measuring the SOI film thickness of the SOI wafer having the SOI layer before the thinning step; (A2) determining rotational position of the SOI wafer in the thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness and previously determined radial stock removal distribution in the thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position; and (A3) thinning the SOI layer of the rotated SOI wafer. The method for manufacturing the SOI wafer can produce an SOI wafer with an excellent radial film thickness uniformity of the SOI layer after the thinning step.

Abstract: A method for measuring film thickness distribution, including calculating profile P1 indicating wavelength dependence of a reflectance of a first wafer being an object measured with respect to a light at wavelengths not less than a wavelength region of visible light; calculating profile P21 indicating wavelength dependence of a reflectance of a second wafer to light at wavelengths not less than wavelength region of visible light; obtaining a wavelength ?1 observed when profile P31 of a difference between calculated profiles P1 and P21 becomes zero; and selecting waveband including the obtained wavelength ?1 as a waveband of light for use in film thickness distribution measurement by reflection spectroscopy. The film thickness distribution of the first thin film is measured by reflection spectroscopy in a manner that a surface of the first wafer is irradiated with a light to selectively measure only reflected light at a selected waveband.

Abstract: A method for measuring a film thickness of an SOI layer of an SOI wafer including at least an insulator layer and the SOI layer which is formed on the insulator layer and is formed of a silicon single crystal, wherein a surface of the SOI layer is irradiated with an electron beam, characteristic X-rays are detected from a side of the SOI layer surface irradiated with the electron beam, the characteristic X-rays being generated by exciting a specific element in the insulator layer with the electron beam that has passed through the SOI layer and has been attenuated in the SOI layer, and the film thickness of the SOI layer is calculated on the basis of an intensity of the detected characteristic X-rays.

Abstract: A method for evaluating a thin-film-formed wafer, being configured to calculate a film thickness distribution of a thin film of the thin-film-formed wafer having the thin film on a surface of a substrate, wherein light having a single wavelength ? is applied to a partial region of a surface of the thin-film-formed wafer, reflected light from the region is detected, reflected light intensity for each pixel obtained by dividing the region into many pieces is measured, a reflected light intensity distribution in the region is obtained, and the film thickness distribution of the thin film in the region is calculated from the reflected light intensity distribution. The method enables a film thickness distribution of the micro thin film (an SOI layer) that affects a device to be measured on the entire wafer surface at a low cost with a sufficient spatial resolution in a simplified manner.

Abstract: A method for measuring film thickness distribution, including calculating profile P1 indicating wavelength dependence of a reflectance of a first wafer being an object measured with respect to a light at wavelengths not less than a wavelength region of visible light; calculating profile P21 indicating wavelength dependence of a reflectance of a second wafer to light at wavelengths not less than wavelength region of visible light; obtaining a wavelength ?1 observed when profile P31 of a difference between calculated profiles P1 and P21 becomes zero; and selecting waveband including the obtained wavelength ?1 as a waveband of light for use in film thickness distribution measurement by reflection spectroscopy. The film thickness distribution of the first thin film is measured by reflection spectroscopy in a manner that a surface of the first wafer is irradiated with a light to selectively measure only reflected light at a selected waveband.

Abstract: A method for manufacturing an SOI wafer that has an SOI layer formed on a buried insulator layer and is suitable for photolithography with an exposure light having a wavelength ? comprises: designing a thickness of the buried insulator layer of the SOI wafer on the basis of the wavelength ? of the exposure light utilized for the photolithography that is to be performed on the SOI wafer after manufacturing; and fabricating the SOI wafer that has the SOI layer formed on the buried insulator layer having the designed thickness. As a result, there is provided a method for designing an SOI wafer and a method for manufacturing an SOI wafer that enable the variation in the reflection rate of the exposure light due to the variation in the SOI layer thickness and hence variation in the exposure state of a resist to be inhibited in a photolithography operation.

Abstract: A method for measuring a film thickness of an SOI layer of an SOI wafer including at least an insulator layer and the SOI layer which is formed on the insulator layer and is formed of a silicon single crystal, wherein a surface of the SOT layer is irradiated with an electron beam, characteristic X-rays are detected from a side of the SOI layer surface irradiated with the electron beam, the characteristic X-rays being generated by exciting a specific element in the insulator layer with the electron beam that has passed through the SOI layer and has been attenuated in the SOI layer, and the film thickness of the SOI layer is calculated on the basis of an intensity of the detected characteristic X-rays.

Abstract: According to the present invention, there is provided a method for manufacturing an SOI wafer, the method configured to grow an epitaxial layer on an SOI layer of the SOI wafer having the SOI layer on a BOX layer to increase a thickness of the SOI layer, wherein epitaxial growth is carried out by using an SOI wafer whose infrared reflectance in an infrared wavelength range of 800 to 1300 nm falls within the range of 20% to 40% as the SOI wafer on which the epitaxial layer is grown. As a result, a high-quality SOI wafer with less slip dislocation and others can be provided with excellent productivity at a low cost as the SOI wafer including the SOI layer having a thickness increased by growing the epitaxial layer, and a manufacturing method thereof can be also provide.

Abstract: A method for evaluating a thin-film-formed wafer, being configured to calculate a film thickness distribution of a thin film of the thin-film-formed wafer having the thin film on a surface of a substrate, wherein light having a single wavelength ? is applied to a partial region of a surface of the thin-film-formed wafer, reflected light from the region is detected, reflected light intensity for each pixel obtained by dividing the region into many pieces is measured, a reflected light intensity distribution in the region is obtained, and the film thickness distribution of the thin film in the region is calculated from the reflected light intensity distribution. The method enables a film thickness distribution of the micro thin film (an SOI layer) that affects a device to be measured on the entire wafer surface at a low cost with a sufficient spatial resolution in a simplified manner.

Abstract: A method for manufacturing an SOI wafer that has an SOI layer formed on a buried insulator layer and that is to be used in a device fabrication process or an inspection process including a process of controlling a position of the SOI wafer on the basis of intensity of reflected light from the SOI wafer when the SOI wafer is irradiated with light having a wavelength ?. The method includes the steps of: designing a thickness of the buried insulator layer of the SOI wafer on the basis of the wavelength ? of the light for use in the process of controlling the position that is to be implemented on the SOI wafer after manufacturing; and fabricating the SOI wafer having the SOI layer formed on the buried insulator layer having the designed thickness.

Abstract: A method for manufacturing an SOI wafer that has an SOI layer formed on a buried insulator layer and is suitable for photolithography with an exposure light having a wavelength ? comprises: designing a thickness of the buried insulator layer of the SOI wafer on the basis of the wavelength ? of the exposure light utilized for the photolithography that is to be performed on the SOI wafer after manufacturing; and fabricating the SOI wafer that has the SOI layer formed on the buried insulator layer having the designed thickness. As a result, there is provided a method for designing an SOI wafer and a method for manufacturing an SOI wafer that enable the variation in the reflection rate of the exposure light due to the variation in the SOI layer thickness and hence variation in the exposure state of a resist to be inhibited in a photolithography operation.

Abstract: An inspection method of an SOI wafer in which profiles P1 and P2 are calculated in the SOI wafer to be inspected and in an SOI wafer having a film thickness of the SOI layer thicker or thinner than that of the SOI wafer to be inspected, respectively; a profile P3 of a difference between P1 and P2, or a profile P4 of a change ratio of P1 and P2 is calculated; light having the wavelength band selected on the basis of a maximum peak wavelength within the calculated profiles P3 or P4 is irradiated to the surface of the SOI wafer to be inspected, to detect the reflected-light from the SOI wafer; and a place of a peak generated by an increase in reflection intensity of the detected reflected-light is found, as the defect caused by the change in the film thickness of the SOI layer.

Abstract: An inspection method of an SOI wafer in which profiles P1 and P2 are calculated in the SOI wafer to be inspected and in an SOI wafer having a film thickness of the SOI layer thicker or thinner than that of the SOI wafer to be inspected, respectively; a profile P3 of a difference between P1 and P2, or a profile P4 of a change ratio of P1 and P2 is calculated; light having the wavelength band selected on the basis of a maximum peak wavelength within the calculated profiles P3 or P4 is irradiated to the surface of the SOI wafer to be inspected, to detect the reflected-light from the SOI wafer; and a place of a peak generated by an increase in reflection intensity of the detected reflected-light is found, as the defect caused by the change in the film thickness of the SOI layer.

Abstract: According to the present invention, there is provided a method for manufacturing an SOI wafer, the method configured to grow an epitaxial layer on an SOI layer of the SOI wafer having the SOI layer on a BOX layer to increase a thickness of the SOI layer, wherein epitaxial growth is carried out by using an SOI wafer whose infrared reflectance in an infrared wavelength range of 800 to 1300 nm falls within the range of 20% to 40% as the SOI wafer on which the epitaxial layer is grown. As a result, a high-quality SOI wafer with less slip dislocation and others can be provided with excellent productivity at a low cost as the SOI wafer including the SOI layer having a thickness increased by growing the epitaxial layer, and a manufacturing method thereof can be also provide.

Abstract: A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.

Abstract: A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.

Abstract: A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.