Patents by Inventor Susumu Kuwabata

Susumu Kuwabata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240387784
    Abstract: Provided is an efficient method for producing semiconductor nanoparticles that exhibit band edge emission. The method comprises performing a first heat treatment of a first mixture, which contains a Cu salt, a Ag salt, a salt containing at least one of In or Ga, a gallium halide, and an organic solvent, to obtain first semiconductor nanoparticles. At least one of the Cu salt, the Ag salt, or the salt containing at least one of In or Ga in the first mixture contains a compound having a bond formed of a metal and sulfur.
    Type: Application
    Filed: July 8, 2022
    Publication date: November 21, 2024
    Applicants: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Susumu KUWABATA, Taro UEMATSU, Tomoya KUBO, Yohei IKAGAWA, Daisuke OYAMATSU
  • Patent number: 12113148
    Abstract: Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.
    Type: Grant
    Filed: July 25, 2023
    Date of Patent: October 8, 2024
    Assignees: National University Corporation Tokai National Higher Education and Research System, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa Torimoto, Tatsuya Kameyama, Yuki Mori, Hiroki Yamauchi, Susumu Kuwabata, Taro Uematsu, Daisuke Oyamatsu
  • Publication number: 20240332462
    Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
    Type: Application
    Filed: June 6, 2024
    Publication date: October 3, 2024
    Applicants: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Marino KISHI, Chie MIYAMAE, Susumu KUWABATA, Taro UEMATSU, Daisuke OYAMATSU, Kenta NIKI
  • Patent number: 12074253
    Abstract: Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125 ?C to 175 ?C, and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125 ?C to 175 ?C for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.
    Type: Grant
    Filed: November 7, 2022
    Date of Patent: August 27, 2024
    Assignees: OSAKA UNIVERSITY, National University Corporation Tokai National Higher Education and Research System, NICHIA CORPORATION
    Inventors: Susumu Kuwabata, Taro Uematsu, Kazutaka Wajima, Tsukasa Torimoto, Tatsuya Kameyama, Daisuke Oyamatsu
  • Patent number: 12040433
    Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
    Type: Grant
    Filed: March 28, 2023
    Date of Patent: July 16, 2024
    Assignees: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa Torimoto, Tatsuya Kameyama, Marino Kishi, Chie Miyamae, Susumu Kuwabata, Taro Uematsu, Daisuke Oyamatsu, Kenta Niki
  • Publication number: 20240209258
    Abstract: Provided is a method of producing semiconductor nanoparticles that exhibit band-edge emission and have excellent band-edge emission purity and internal quantum yield.
    Type: Application
    Filed: February 22, 2022
    Publication date: June 27, 2024
    Applicants: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Susumu KUWABATA, Taro UEMATSU, Yohei IKAGAWA, Daisuke OYAMATSU, Tomoya KUBO
  • Patent number: 11981849
    Abstract: Semiconductor nanoparticles are provided. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. An Ag content is 10 mol % to 30 mol %, a total content of the at least one of In and Ga is 15 mol % to 35 mol %, and an Se content is 35 mol % to 55 mol % in the semiconductor nanoparticles. The semiconductor nanoparticles emit light having an emission spectrum with a peak emission wavelength in a range of 500 nm to 900 nm, and a half bandwidth of 250 meV or less upon irradiation with light in a wavelength range of 350 nm to less than 500 nm.
    Type: Grant
    Filed: February 16, 2021
    Date of Patent: May 14, 2024
    Assignees: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa Torimoto, Tatsuya Kameyama, Hiroki Yamauchi, Chie Miyamae, Yuki Mori, Susumu Kuwabata, Taro Uematsu, Daisuke Oyamatsu
  • Publication number: 20240063334
    Abstract: Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.
    Type: Application
    Filed: July 25, 2023
    Publication date: February 22, 2024
    Applicants: National University Corporation Tokai National Higher Education and Research System, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Yuki MORI, Hiroki YAMAUCHI, Susumu KUWABATA, Taro UEMATSU, Daisuke OYAMATSU
  • Publication number: 20230416603
    Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.
    Type: Application
    Filed: September 11, 2023
    Publication date: December 28, 2023
    Applicants: OSAKA UNIVERSITY, NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, NICHIA CORPORATION
    Inventors: Susumu KUWABATA, Taro UEMATSU, Kazutaka WAJIMA, Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Daisuke OYAMATSU, Kenta NIKI
  • Patent number: 11788003
    Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.
    Type: Grant
    Filed: September 28, 2021
    Date of Patent: October 17, 2023
    Assignees: OSAKA UNIVERSITY, NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, NICHIA CORPORATION
    Inventors: Susumu Kuwabata, Taro Uematsu, Kazutaka Wajima, Tsukasa Torimoto, Tatsuya Kameyama, Daisuke Oyamatsu, Kenta Niki
  • Patent number: 11757064
    Abstract: Provided is a method for manufacturing a semiconductor nanoparticle, the method includes performing a heat treatment of a first mixture containing a silver (Ag) salt, an alkali metal salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent. A ratio of the number of atoms of an alkali metal to the total number of atoms of Ag and the alkali metal in the first mixture is greater than 0 and less than 1.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: September 12, 2023
    Assignees: National University Corporation Tokai National Higher Education and Research System, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa Torimoto, Tatsuya Kameyama, Yuki Mori, Hiroki Yamauchi, Susumu Kuwabata, Taro Uematsu, Daisuke Oyamatsu
  • Publication number: 20230253533
    Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
    Type: Application
    Filed: March 28, 2023
    Publication date: August 10, 2023
    Applicants: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Marino KISHI, Chie MIYAMAE, Susumu KUWABATA, Taro UEMATSU, Daisuke OYAMATSU, Kenta NIKI
  • Publication number: 20230151271
    Abstract: Provided is a method of producing semiconductor nanoparticles exhibiting band-edge emission with a short emission peak wavelength. The method of producing semiconductor nanoparticles comprises: obtaining a first mixture that contains a Ag salt, an In salt, a compound containing Ga and S, and an organic solvent; and performing a heat treatment of the first mixture at a temperature in a range of 125° C. or higher and 300° C. or lower to obtain first semiconductor nanoparticles.
    Type: Application
    Filed: March 8, 2021
    Publication date: May 18, 2023
    Applicants: National University Corporation Tokai National Higher Education and Research System, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Susumu KUWABATA, Taro UEMATSU, Yohei IKAGAWA, Daisuke OYAMATSU, Tomoya KUBO
  • Patent number: 11652194
    Abstract: Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.
    Type: Grant
    Filed: July 14, 2021
    Date of Patent: May 16, 2023
    Assignees: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa Torimoto, Tatsuya Kameyama, Marino Kishi, Chie Miyamae, Susumu Kuwabata, Taro Uematsu, Daisuke Oyamatsu, Kenta Niki
  • Publication number: 20230120918
    Abstract: Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125 ?C to 175 ?C, and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125 ?C to 175 ?C for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.
    Type: Application
    Filed: November 7, 2022
    Publication date: April 20, 2023
    Applicants: OSAKA UNIVERSITY, National University Corporation Tokai National Higher Education and Research System, NICHIA CORPORATION
    Inventors: Susumu KUWABATA, Taro UEMATSU, Kazutaka WAJIMA, Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Daisuke OYAMATSU
  • Patent number: 11532767
    Abstract: Provided is a method of producing semiconductor nanoparticles that exhibit a band-edge emission, and are superior in quantum yield. The method includes raising the temperature of a first mixture containing a silver (Ag) salt, a salt containing at least one of indium (In) and gallium (Ga), a solid compound that serves as a supply source of sulfur (S), and an organic solvent to a temperature in a range of from 125° C. to 175° C., and heat-treating, subsequent to the raising of the temperature, the first mixture at a temperature in a range of from 125° C. to 175° C. for three seconds or more to obtain a solution containing semiconductor nanoparticles, and decreasing the temperature of the solution containing semiconductor nanoparticles. The solid compound that serves as a supply source of S contains thiourea.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: December 20, 2022
    Assignees: OSAKA UNIVERSITY, National University Corporation Tokai National Higher Education and Research System, NICHIA CORPORATION
    Inventors: Susumu Kuwabata, Taro Uematsu, Kazutaka Wajima, Tsukasa Torimoto, Tatsuya Kameyama, Daisuke Oyamatsu
  • Publication number: 20220285589
    Abstract: Provided is a method for producing semiconductor nanoparticles. The method includes: providing first semiconductor nanoparticles containing a semiconductor containing an element M1, an element M2 and an element Z, wherein the element M1 is at least one element selected from the group consisting of Ag, Cu, Au and an alkali metal, and contains at least Ag, the element M2 is at least one element selected from the group consisting of Al, Ga, In and Tl, and contains at least one of In and Ga, and the element Z contains at least one element selected from the group consisting of S, Se and Te; and heat-treating a mixture containing the first semiconductor nanoparticles, a first compound having a Ga—S bond, a second compound containing Ga and not containing S, and an organic solvent to obtain second semiconductor nanoparticles.
    Type: Application
    Filed: March 7, 2022
    Publication date: September 8, 2022
    Applicants: National University Corporation Tokai National Higher Education and Research System, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Chie MIYAMAE, Susumu KUWABATA, Taro UEMATSU, Tomoya KUBO
  • Patent number: 11332663
    Abstract: Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: May 17, 2022
    Assignees: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION and RESEARCH SYSTEM, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa Torimoto, Tatsuya Kameyama, Marino Kishi, Susumu Kuwabata, Taro Uematsu, Daisuke Oyamatsu
  • Publication number: 20220089452
    Abstract: Provided is a method for producing a semiconductor nanoparticle including preparing a mixture containing a Ag salt, a salt containing at least one of In and Ga, and an organic solvent; raising the temperature of the mixture to a raised temperature in a range of from 120° C. to 300° C.; and adding a supply source of S to the mixture at the raised temperature in such a manner that a ratio of a number of S atoms to a number of Ag atoms in the mixture increases at a rate of not more than 10/min.
    Type: Application
    Filed: February 7, 2020
    Publication date: March 24, 2022
    Applicants: National University Corporation Tokai National Higher Education and Research System, OSAKA UNIVERSITY, NICHIA CORPORATION
    Inventors: Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Susumu KUWABATA, Taro UEMATSU, Daisuke OYAMATSU
  • Publication number: 20220017819
    Abstract: A semiconductor nanoparticle includes a core and a shell covering a surface of the core. The shell has a larger bandgap energy than the core and is in heterojunction with the core. The semiconductor nanoparticle emits light when irradiated with light. The core is made of a semiconductor that contains M1, M2, and Z. M1 is at least one element selected from the group consisting of Ag, Cu, and Au. M2 is at least one element selected from the group consisting of Al, Ga, In and Tl. Z is at least one element selected from the group consisting of S, Se, and Te. The shell is made of a semiconductor that consists essentially of a Group 13 element and a Group 16 element.
    Type: Application
    Filed: September 28, 2021
    Publication date: January 20, 2022
    Applicants: OSAKA UNIVERSITY, NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM, NICHIA CORPORATION
    Inventors: Susumu KUWABATA, Taro UEMATSU, Kazutaka WAJIMA, Tsukasa TORIMOTO, Tatsuya KAMEYAMA, Daisuke OYAMATSU, Kenta NIKI